Patent US4835113A successfully refreshed from Google Patents.
US4835113A
Expired / Lapsed
US
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Fabrication of dielectrically isolated devices with buried conductive layers
Assignee: Nokia Bell Labs
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Filing: 1987-11-23
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Granted: 1989-05-30
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Expires: 2007-11-23
Abstract
Abstract In dielectrically isolated devices a buried conducting layer adjacent to the dielectric layer is produced by a drift effect. In particular, if arsenic antimony and/or phosphorus is present in the silicon dioxide layer, it is caused to drift from this layer and enter the adjacent isolated silicon region while maintaining a relatively narrow spatial configuration. Thus, a discrete buried highly conductive layer is formed. This configuration is particularly useful for transistor configurations such as utilized in switching applications.
Inventors
- 👤 George K. Celler
- 👤 Lee E. Trimble
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:06
CPC Classifications
H; H10; H10W; H10W15/00; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; H10W15/01
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
80 words
A method of making a device comprising the steps of (1) forming a structure including (a) a region comprising silicon dioxide and containing arsenic entities, and (b) a region comprising silicon wherein said region of silicon dioxide is adjacent to said region of silicon and (2) completing said device, wherein thermal gradients produced during said completion of said device are controlled to in turn control the drift of said arsenic entities into a solid portion of said region of silicon.
Claim 2
Independent Claim
80 words
A method of making a device comprising the steps of (1) forming a structure including (a) a region comprising silicon dioxide and containing arsenic entities, and (b) a region comprising silicon wherein said region of silicon dioxide is adjacent to said region of silicon and (2) completing said device, wherein thermal gradients produced during said completion of said device are controlled to in turn control the drift of said arsenic entities into a solid portion of said region of silicon.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said device includes a vertically isolated region of single crystal silicon.
Claim 4
Dependent Claim
19 words
The method of claim 2 wherein said region of single crystal silicon is formed from said region of silicon.
Claim 5
Dependent Claim
14 words
The method of claim 3 wherein said formation is produced by thermally induced recrystallization.
Claim 6
Dependent Claim
37 words
The method of claim 2 wherein said thermal gradient is utilized to induce drift of said arsenic entities from said region of silicon dioxide to said region of silicon thereby producing a buried region of high conductivity.
Claim 7
Dependent Claim
36 words
The method of claim 1 wherein said thermal gradient is utilized to induce drift of said arsenic entities from said region of silicon dioxide to said region of silicon thereby producing a region of high conductivity.
Claim 8
Dependent Claim
27 words
The method of claim 1 wherein said method includes a nonisothermal step and wherein thermal gradients are limited to avoid substantial drift of said arsenic group entities.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein said arsenic entities are introduced into said region of silicon dioxide by ion implantation.
Claim 10
Dependent Claim
17 words
The method of claim 1 wherein said region of silicon dioxide is formed from a spin-on glass.
Claim 11
Dependent Claim
14 words
The method of claim 1 wherein said thermal gradient is produced by radiant energy.
Claim 12
Independent Claim
92 words
A method of making a device comprising the steps of (1) forming a structure including (a) a region comprising silicon dioxide and containing a member chosen from the group consisting of phosphorus entities and antimony entities, and (b) a region comprising silicon wherein said region of silicon dioxide is adjacent to said region of silicon and (2) completing said device, wherein thermal gradients produced during said completion of said device are controlled to in turn control the drift of said arsenic group entities into a solid portion of said region of silicon.
Claim 13
Independent Claim
92 words
A method of making a device comprising the steps of (1) forming a structure including (a) a region comprising silicon dioxide and containing a member chosen from the group consisting of phosphorus entities and antimony entities, and (b) a region comprising silicon wherein said region of silicon dioxide is adjacent to said region of silicon and (2) completing said device, wherein thermal gradients produced during said completion of said device are controlled to in turn control the drift of said arsenic group entities into a solid portion of said region of silicon.
Claim 14
Dependent Claim
17 words
The method of claim 11 wherein said device includes a vertically isolated region of single crystal silicon.
Claim 15
Dependent Claim
19 words
The method of claim 12 wherein said region of single crystal silicon is formed from said region of silicon.
Claim 16
Dependent Claim
14 words
The method of claim 13 wherein said formation is produced by thermally induced recrystallization.
Claim 17
Dependent Claim
36 words
The method of claim 12 wherein said thermal gradient is utilized to induce drift of said member from said region of silicon dioxide to said region of silicon thereby producing a buried region of high conductivity.
Claim 18
Dependent Claim
35 words
The method of claim 11 wherein said thermal gradient is utilized to induce drift of said member from said region of silicon dioxide to said region of silicon thereby producing a region of high conductivity.
Claim 19
Dependent Claim
25 words
The method of claim 11 wherein said method includes a non-isothermal step and wherein thermal gradients are limited to avoid substantial drift of said member.
Claim 20
Dependent Claim
19 words
The method of claim 11 wherein said members are introduced into said region of silicon dioxide by ion implantation.
Claim 21
Dependent Claim
16 words
The method of claim 11 wherein said region of silicon dioxide is formed from a spin-on-glass.
Claim 22
Dependent Claim
14 words
The method of claim 11 wherein said thermal gradient is produced by radiant energy.
References Cited (Backward Citations)
JPS60170231A
Cited
JPS60244047A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |