US4832781A
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Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
Assignee: Varian Semiconductor Equipment Associates Inc
•
Filing: 1988-01-07
•
Granted: 1989-05-23
•
Expires: 2008-01-07
Abstract
Abstract Thermal transfer between a semiconductor wafer and a platen during vacuum processing is provided through a soft, thermally-conductive polymer layer having a thin, hard surface film. The soft polymer layer, which is preferably silicone rubber containing thermally-conductive particles, conforms to surface irregularities on the wafer and has low thermal resistance. The surface film is preferably silicon dioxide in the form of a multiplicity of flat plates integrally formed on the silicone rubber. Adherence of the wafer and of foreign matter to the polymer layer is prevented by the surface film. In addition, the underlying polymer layer is protected by the surface film. A high purity polymer layer is fabricated by evacuating the mold cavity and the resin container prior to injection of resin. The mold for the polymer layer utilizes a hard, smooth mold release surface and a resilient gasket between the platen and the mold release surface. The gasket establishes the dimensions of the polymer layer and seals the mold cavity. The surface film is formed by oxygen plasma treatment of the silicone rubber layer.
Inventors
- 👤 Eric L. Mears
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:47
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0432; C; C23; C23C; C23C14/00; C23C14/22; C23C14/50; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B31/00; C30B31/06; C30B31/12; C30B31/20; C30B31/22; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/0451; H10P72/0468; H10P72/0471; H10P72/70; H10P72/76; H10P72/7604; H10P72/7618; H10P72/7621
Claims Analysis
Total Claims: 68
Claim 1
Independent Claim
69 words
Apparatus for effecting thermal transfer with a workpiece in vacuum, comprising: a thermally-conductive member including a heat transfer surface; a first resilient, thermally-conductive layer affixed to said heat transfer surface for conforming to the shape of a surface of said workpiece; and a second thermally-conductive layer, thin relative to said first layer, affixed to said first layer and having a smooth surface for contacting said workpiece without adhering thereto.
Claim 2
Dependent Claim
69 words
Apparatus for effecting thermal transfer with a workpiece in vacuum, comprising: a thermally-conductive member including a heat transfer surface; a first resilient, thermally-conductive layer affixed to said heat transfer surface for conforming to the shape of a surface of said workpiece; and a second thermally-conductive layer, thin relative to said first layer, affixed to said first layer and having a smooth surface for contacting said workpiece without adhering thereto.
Claim 3
Dependent Claim
15 words
Apparatus as defined in claim 1 wherein said first layer comprises a thermally-conductive polymer layer.
Claim 4
Dependent Claim
18 words
Apparatus as defined in claim 2 wherein said polymer layer comprises silicone rubber having thermally-conductive particles dispersed therein.
Claim 5
Dependent Claim
16 words
Apparatus as defined in claim 3 wherein said second layer comprises a thin quartz surface film.
Claim 6
Dependent Claim
13 words
Apparatus as defined in claim 1 wherein said workpiece comprises a semiconductor wafer.
Claim 7
Dependent Claim
20 words
Apparatus as defined in claim 3 wherein said first layer has a durometer value less than about 20 Shore A.
Claim 8
Dependent Claim
20 words
Apparatus as defined in claim 4 wherein said quartz surface film comprises a plurality of plates on said polymer layer.
Claim 9
Dependent Claim
22 words
Apparatus as defined in claim 4 wherein said quartz surface film has a thickness in the range of 0.1 to 5.0 micrometers.
Claim 10
Dependent Claim
21 words
Apparatus as defined in claim 4 wherein said quartz surface film is formed by oxygen plasma treatment of said silicone rubber.
Claim 11
Dependent Claim
14 words
Apparatus as defined in claim 1 wherein said heat transfer surface is substantially flat.
Claim 12
Dependent Claim
24 words
Apparatus as defined in claim 5 further including means for pressing said wafer firmly into contact with the smooth surface of said second layer.
Claim 13
Dependent Claim
31 words
Apparatus as defined in claim 11 wherein said pressing means comprises centrifugal means for pressing said wafer against said second layer without physical contact to the front surface of said wafer.
Claim 14
Dependent Claim
50 words
Apparatus as defined in claim 12 wherein said pressing means comprises means for rotating said thermally-conductive member and said first and second layers about a prescribed axis so that said wafer is pressed against said second layer by centrifugal force, and wherein said first and second layers are substantially flat.
Claim 15
Dependent Claim
19 words
Apparatus as defined in claim 11 wherein said pressing means comprises means for clamping said wafer at its periphery.
Claim 16
Dependent Claim
20 words
Apparatus as defined in claim 1 wherein said second layer comprises a material that is harder than said first layer.
Claim 17
Dependent Claim
21 words
Apparatus as defined in claim 15 wherein said second layer has a thickness in the range of 0.1 to 5.0 micrometers.
Claim 18
Dependent Claim
33 words
Apparatus as defined in claim 15 wherein said first layer comprises silicone rubber having thermally-conductive particles dispersed therein and wherein said second layer is formed by oxygen plasma treatment of said silicone rubber.
Claim 19
Dependent Claim
20 words
Apparatus as defined in claim 15 wherein said second layer is formed by oxygen plasma treatment of said first layer.
Claim 20
Dependent Claim
24 words
Apparatus as defined in claim 3 wherein said thermally-conductive particles comprise aluminum oxide having a dimension on the order of 40 micrometers or less.
Claim 21
Dependent Claim
21 words
Apparatus as defined in claim 19 wherein said thermally-conductive particles do not protrude substantially above the surface of said second layer.
Claim 22
Dependent Claim
60 words
Apparatus for effecting thermal transfer with a semiconductor wafer in vacuum, comprising: a thermally-conductive platen including a heat transfer surface; and a thermally-conductive silicone rubber layer affixed to said heat transfer surface, said silicone rubber layer having a durometer value less than about 20 Shore A and having a thin surface film which prevents adherence of a semiconductor wafer thereto.
Claim 23
Dependent Claim
60 words
Apparatus for effecting thermal transfer with a semiconductor wafer in vacuum, comprising: a thermally-conductive platen including a heat transfer surface; and a thermally-conductive silicone rubber layer affixed to said heat transfer surface, said silicone rubber layer having a durometer value less than about 20 Shore A and having a thin surface film which prevents adherence of a semiconductor wafer thereto.
Claim 24
Dependent Claim
20 words
Apparatus as defined in claim 21 wherein said surface film comprises a plurality of plates on said silicone rubber layer.
Claim 25
Dependent Claim
21 words
Apparatus as defined in claim 21 wherein said surface film has a thickness in the range of 0.1 to 5.0 micrometers.
Claim 26
Dependent Claim
20 words
Apparatus as defined in claim 21 wherein said surface film is formed by oxygen plasma treatment of said silicone rubber.
Claim 27
Dependent Claim
12 words
Apparatus as defined in claim 24 wherein said surface film comprises quartz.
Claim 28
Dependent Claim
18 words
Apparatus as defined in claim 21 wherein said surface film is hard relative to said silicone rubber layer.
Claim 29
Dependent Claim
44 words
Apparatus as defined in claim 21 further including means for pressing a semiconductor wafer firmly into contact with the surface film on said silicone rubber layer, and source means for directing an ion beam at the semiconductor layer pressed onto said silicone rubber layer.
Claim 30
Dependent Claim
48 words
Apparatus as defined in claim 27 wherein said pressing means comprises means for rotating said platen and said silicone rubber layer about a prescribed axis so that said wafer is pressed against said silicone rubber layer by centrifugal force, and wherein said silicone rubber layer is substantially flat.
Claim 31
Dependent Claim
13 words
Apparatus as defined in claim 27 further including means for cooling said platen.
Claim 32
Dependent Claim
23 words
Apparatus as defined in claim 21 wherein said silicone rubber layer has a thickness in the range between 0.001 inch and 0.020 inch.
Claim 33
Dependent Claim
47 words
Apparatus as defined in claim 29 wherein said pressing means comprises centrifugal clamping means for pressing said semiconductor wafer against said silicone rubber layer without physical contact to the front surface of the semiconductor wafer so that the wafer is exposed for treatment by said ion beam.
Claim 34
Dependent Claim
14 words
Apparatus as defined in claim 31 wherein said heat transfer surface is substantially flat.
Claim 35
Dependent Claim
15 words
Apparatus as defined in claim 27 further including a vacuum chamber containing said source means.
Claim 36
Dependent Claim
57 words
Apparatus for effecting thermal transfer with a workpiece in vacuum, comprising: a thermally-conductive platen including a heat transfer surface; a resilient, thermally-conductive polymer layer affixed to said heat transfer surface, said polymer layer having a thin quartz surface film for contacting said workpiece; and means for pressing said workpiece firmly into contact with said quartz surface film.
Claim 37
Dependent Claim
57 words
Apparatus for effecting thermal transfer with a workpiece in vacuum, comprising: a thermally-conductive platen including a heat transfer surface; a resilient, thermally-conductive polymer layer affixed to said heat transfer surface, said polymer layer having a thin quartz surface film for contacting said workpiece; and means for pressing said workpiece firmly into contact with said quartz surface film.
Claim 38
Dependent Claim
18 words
Apparatus as defined in claim 34 wherein said polymer layer comprises silicone rubber having thermally-conductive particles dispersed therein.
Claim 39
Dependent Claim
22 words
Apparatus as defined in claim 34 wherein said quartz surface film has a thickness in the range of 0.1 to 5.0 micrometers.
Claim 40
Dependent Claim
20 words
Apparatus as defined in claim 34 wherein said quartz surface film comprises a plurality of plates on said polymer layer.
Claim 41
Independent Claim
62 words
A method for effecting thermal transfer with a workpiece in vacuum, comprising the steps of: providing a thermally-conductive platen including a heat transfer surface; affixing a soft, thermally-conductive polymer layer to the heat transfer surface; forming on said polymer layer a thin surface film for contacting said workpiece without adhering thereto; and pressing the workpiece firmly into contact with the surface film.
Claim 42
Independent Claim
62 words
A method for effecting thermal transfer with a workpiece in vacuum, comprising the steps of: providing a thermally-conductive platen including a heat transfer surface; affixing a soft, thermally-conductive polymer layer to the heat transfer surface; forming on said polymer layer a thin surface film for contacting said workpiece without adhering thereto; and pressing the workpiece firmly into contact with the surface film.
Claim 43
Dependent Claim
34 words
A method as defined in claim 38 wherein the step of affixing a polymer layer includes the step of affixing a silicone rubber layer having thermally-conductive particles dispersed therein, on said heat transfer surface.
Claim 44
Dependent Claim
26 words
A method as defined in claim 39 wherein the step of forming a surface film includes the step of oxygen plasma treatment of said silicone rubber.
Claim 45
Dependent Claim
35 words
A method as defined in claim 40 wherein the step of oxygen plasma treatment of said silicone rubber is sufficient to form said surface film of thickness in the range of 0.1 to 5.0 micrometers.
Claim 46
Dependent Claim
24 words
A method as defined in claim 39 wherein the step of forming a surface film includes the step of forming a quartz surface film.
Claim 47
Dependent Claim
39 words
A method as defined in claim 40 wherein the step of oxygen plasma treatment is performed at an oxygen pressure of about 400 microns and an rf level of about one kilowatt for a time of about 30 minutes.
Claim 48
Dependent Claim
21 words
A method as defined in claim 38 further including the step of fracturing said surface film into a plurality of plates.
Claim 49
Dependent Claim
20 words
A method as defined in claim 44 wherein the step of fracturing said surface film includes stressing said surface film.
Claim 50
Dependent Claim
53 words
Apparatus for effecting thermal transfer with a semiconductor wafer in vacuum, comprising: a thermally-conductive platen including a heat transfer surface; and a thermally-conductive polymer layer affixed to said heat transfer surface, said polymer layer having a thin surface film for contacting said semiconductor wafer, said surface film being harder than said polymer layer.
Claim 51
Dependent Claim
53 words
Apparatus for effecting thermal transfer with a semiconductor wafer in vacuum, comprising: a thermally-conductive platen including a heat transfer surface; and a thermally-conductive polymer layer affixed to said heat transfer surface, said polymer layer having a thin surface film for contacting said semiconductor wafer, said surface film being harder than said polymer layer.
Claim 52
Dependent Claim
21 words
Apparatus as defined in claim 46 wherein said surface film has a thickness in the range of 0.1 to 5.0 micrometers.
Claim 53
Dependent Claim
18 words
Apparatus as defined in claim 47 wherein said polymer layer comprises silicone rubber having thermally-conductive particles dispersed therein.
Claim 54
Dependent Claim
22 words
Apparatus as defined in claim 46 wherein said surface film and said polymer layer have a hardness ratio of at least 10:1.
Claim 55
Dependent Claim
20 words
Apparatus as defined in claim 46 wherein said polymer layer is at least 50 times thicker than said surface film.
Claim 56
Dependent Claim
20 words
Apparatus as defined in claim 49 wherein said polymer layer has a durometer value of 20 Shore A or less.
Claim 57
Dependent Claim
18 words
Apparatus as defined in claim 46 wherein said surface film comprises an oxide formed from said polymer layer.
Claim 58
Independent Claim
45 words
A method of treating a thermally-conductive polymer layer used for thermal transfer with a semiconductor wafer to prevent adherence of the wafer to the polymer layer, comprising: forming a thin surface film on said polymer layer, said surface film being harder than said polymer layer.
Claim 59
Independent Claim
45 words
A method of treating a thermally-conductive polymer layer used for thermal transfer with a semiconductor wafer to prevent adherence of the wafer to the polymer layer, comprising: forming a thin surface film on said polymer layer, said surface film being harder than said polymer layer.
Claim 60
Dependent Claim
26 words
A method as defined in claim 53 wherein the step of forming a surface film includes the step of oxygen plasma treatment of said polymer layer.
Claim 61
Dependent Claim
41 words
A method as defined in claim 53 wherein said polymer layer comprises silicone rubber and wherein the step of forming a surface film includes the step of oxygen plasma treatment of said silicone rubber layer to form a quartz surface film.
Claim 62
Dependent Claim
21 words
A method as defined in claim 53 further including the step of fracturing the surface film into a plurality of plates.
Claim 63
Dependent Claim
20 words
A method as defined in claim 56 wherein the step of fracturing said surface film includes stressing said surface film.
Claim 64
Dependent Claim
31 words
A method as defined in claim 55 wherein the step of forming a surface film includes forming said surface film to a thickness in the range of 0.1 to 5.0 micrometers.
Claim 65
Dependent Claim
53 words
Apparatus for effecting thermal transfer with a workpiece in vacuum, comprising: a thermally-conductive base having a heat transfer surface; a first thermally-conductive polymer layer affixed to said heat transfer surface; and a second thermally-conductive layer over said first layer, said second layer having a smooth surface for contacting said workpiece without adhering thereto.
Claim 66
Dependent Claim
53 words
Apparatus for effecting thermal transfer with a workpiece in vacuum, comprising: a thermally-conductive base having a heat transfer surface; a first thermally-conductive polymer layer affixed to said heat transfer surface; and a second thermally-conductive layer over said first layer, said second layer having a smooth surface for contacting said workpiece without adhering thereto.
Claim 67
Dependent Claim
18 words
Apparatus as defined in claim 59 wherein said second layer comprises an oxide formed from said polymer layer.
Claim 68
Dependent Claim
20 words
Apparatus as defined in claim 59 wherein said second layer comprises graphite mechanically deposited and rubbed on said polymer layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-22 | 1992-11-21 | 1993-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-22 | 1996-11-21 | 1997-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-22 | 2000-11-21 | 2001-05-23 | $7700.00 | Window Closed / Lapsed |