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Charged particle beam lithography system

Assignee: Hitachi Ltd
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Filing: 1986-10-24
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Granted: 1989-05-09
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Expires: 2006-10-24
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Abstract

Abstract A charged particle beam lithography system has a high-throughput and inexpensive system configuration. The system configuration is constituted by a plurality of charged particle optical systems each adapted to focus and deflect a beam of charged particles and irradiate the beam onto a specimen so that the beam draws a desired pattern on the specimen, a plurality of deflection distortion correcting circuits each associated with each of the charged particle optical systems for correcting a deflection distortion of each charged particle optical system, and a common pattern data control circuit for supplying data of a pattern to be drawn to each of the plurality of deflection distortion correcting circuits.

Inventors

  • 👤 Norio Saitou
  • 👤 Masahide Okumura
  • 👤 Tsutomu Komoda
  • 👤 Mitsuo Ooyama

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 18:58
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; H01J37/3177; B; B82; B82Y; B82Y10/00; B82Y40/00

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 148 words
A charged particle beam lithography system comprising: a plurality of charged particle optical systems each adapted to focus and deflect a beam of charged particles and irradiate said beam onto a specimen so that said beam draws a desired pattern on said specimen; a plurality of deflection distortion correcting circuits associated with said charged particle optical systems for correcting a deflection distortion of each charged particle optical system respectively; a plurality of pattern data memories associated with said deflection distortion correcting circuits respectively with different memories having different data patterns stored therein; a common pattern data control circuit for supplying data of a pattern to be drawn individually to said pattern data memories so that said memories enable storage of data patterns that are different from each other and capable of being drawn at the same time; and means for drawing different data patterns at the same time.
Claim 2
Dependent Claim 148 words
A charged particle beam lithography system comprising: a plurality of charged particle optical systems each adapted to focus and deflect a beam of charged particles and irradiate said beam onto a specimen so that said beam draws a desired pattern on said specimen; a plurality of deflection distortion correcting circuits associated with said charged particle optical systems for correcting a deflection distortion of each charged particle optical system respectively; a plurality of pattern data memories associated with said deflection distortion correcting circuits respectively with different memories having different data patterns stored therein; a common pattern data control circuit for supplying data of a pattern to be drawn individually to said pattern data memories so that said memories enable storage of data patterns that are different from each other and capable of being drawn at the same time; and means for drawing different data patterns at the same time.
Claim 3
Dependent Claim 19 words
A charged particle beam lithography system according to claim 1, wherein said charged particle beam is an electron beam.
Claim 4
Dependent Claim 19 words
A charged particle beam lithography system according to claim 1, wherein said charged particle beam is an ion beam.

References Cited (Backward Citations)

US4390788A Cited
US4430571A Cited
US4538232A Cited
US4390789A Cited
US4433384A Cited
US4694178A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-05-08 1992-11-07 1993-05-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-05-08 1996-11-07 1997-05-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-05-08 2000-11-07 2001-05-09 $7700.00 Window Closed / Lapsed

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