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US4829357A
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PNPN thyristor
Assignee: NEC Corp
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Filing: 1987-12-22
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Granted: 1989-05-09
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Expires: 2007-12-22
Abstract
Abstract A pnpn thyristor comprises an anode and cathode region, and a base region which is positioned between the anode and cathode regions. The base region is composed of a p-base layer facing the cathode region, and a first to third n-base layers. Among the first to third n-base layers, the first n-base layer faces the p-base layer, and the third n-base layer faces the anode region. The anode and cathode regions are wider in their forbidden bandwidth than the first and third n-base layers, and the second n-base layer is narrower in its forbidden bandwidth than the first and third n-base layers so that an optical coupling property is improved, and a high output of light is obtained.
Inventors
- 👤 Kenichi Kasahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:22
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/18; G; G02; G02F; G02F3/00; G02F3/02; G02F3/026; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/39; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10F30/263
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
A pnpn thyristor comprising, anode and cathode regions, and a base region which is positioned between said anode and cathode regions, said base region including a p-base layer facing said cathode region, and first to third n-base layers among which said first n-base layer faces said p-base layer, and said third n-base layer faces said anode region, wherein respective forbidden bandwidths of said anode and cathode regions are wider than those of said first and third n-base layers, and a forbidden bandwidth of said second n-base layer is narrower than those of said first and third n-base layers.
Claim 2
Dependent Claim
98 words
A pnpn thyristor comprising, anode and cathode regions, and a base region which is positioned between said anode and cathode regions, said base region including a p-base layer facing said cathode region, and first to third n-base layers among which said first n-base layer faces said p-base layer, and said third n-base layer faces said anode region, wherein respective forbidden bandwidths of said anode and cathode regions are wider than those of said first and third n-base layers, and a forbidden bandwidth of said second n-base layer is narrower than those of said first and third n-base layers.
Claim 3
Dependent Claim
30 words
A pnpn thyristor according to claim 1, wherein the forbidden bandwidths of said first to third n-base layers become wider in proportion to a distance from said second n-base layer.
Claim 4
Dependent Claim
143 words
A pnpn thyristor comprising, a pnpn thyristor element comprising anode and cathode regions, and a base region which is positioned between said anode and cathode regions, said base region including a p-base layer facing said cathode region, and first to third n-base layers among which said first n-base layer faces said p-base layer, and said third n-base layer faces said anode region, wherein respective forbidden bandwidths of said anode and cathode regions are wider than those of said first and third n-base layers, and a forbidden bandwidth of second n-base layer is narrower than those of said first and third n-base layers. a mirror having a predetermined reflecting angle which is positioned near a resonance plane of said pnpn thyristor element, and a plate member having a window for passing trigger light on which said pnpn thyristor element and said mirror are provided.
Claim 5
Dependent Claim
143 words
A pnpn thyristor comprising, a pnpn thyristor element comprising anode and cathode regions, and a base region which is positioned between said anode and cathode regions, said base region including a p-base layer facing said cathode region, and first to third n-base layers among which said first n-base layer faces said p-base layer, and said third n-base layer faces said anode region, wherein respective forbidden bandwidths of said anode and cathode regions are wider than those of said first and third n-base layers, and a forbidden bandwidth of second n-base layer is narrower than those of said first and third n-base layers. a mirror having a predetermined reflecting angle which is positioned near a resonance plane of said pnpn thyristor element, and a plate member having a window for passing trigger light on which said pnpn thyristor element and said mirror are provided.
Claim 6
Dependent Claim
20 words
A pnpn thyristor according to claim 1, in which a thickness of said second n-base layer is approximately 0.1 μm.
Claim 7
Dependent Claim
25 words
A pnpn thyristor according to claim 1, in which thicknesses of said first and third n-base layers are between approximately 0.3 μm and 0.5 μm.
Claim 8
Dependent Claim
25 words
A pnpn thyristor according to claim 1, in which thicknesses of said first and third n-base layers are approximately 0.3 μm and 0.5 μm, respectively.
Claim 9
Dependent Claim
22 words
A pnpn thyristor according to claim 1, in which thicknesses of said first and third n-base layers are each approximately 0.5 μm.
Claim 10
Dependent Claim
34 words
A pnpn thyristor according to claim 1, in which thicknesses of said first and third n-base layers are greater than a thickness of said second n-base layer by factors between approximately 3 and 5.
Claim 11
Dependent Claim
36 words
A pnpn thyristor according to claim 8, in which thicknesses of said first and third n-base layers are each greater than a thickness of said second n-base layer by a factor of approximately 3 and 5.
Claim 12
Dependent Claim
35 words
A pnpn thyristor according to claim 8, in which thicknesses of said first and third n-base layers are greater than a thickness of said second n-base layer by factors of approximately 3 and 5, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-08 | 2000-11-07 | 2001-05-09 | $7700.00 | Window Closed / Lapsed |