US4828935A
Expired / Lapsed
US
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Passivating layer for III-V semiconductor materials
Assignee: United States Department of the Navy
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Filing: 1988-03-30
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Granted: 1989-05-09
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Expires: 2008-03-30
Abstract
Abstract A passivating or insulating layer is described for semiconductor substrat The passivating layer is of the formula Zn 1-x-y M x Q y Se:D where 0≦x≦1, 0≦y≦1, M and Q represent different specified elements and D represents a dopant. It is prefered that M and Q are Fe or Mn. The substrate is preferably a III-V semiconductor compound. The devices are capable of rapid switching among other uses.
Inventors
- 👤 Berend T. Jonker
- 👤 Gary A. Prinz
- 👤 James J. Krebs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S438/00; Y10S438/958; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12681
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
63 words
A passivating layer for III-V semiconductor materials comprising a layer of a composition of the formula Zn 1-x-y M x Q y Se:D wherein 0≦x≦1, 0≦y≦1, M and Q are an element selected from the group consisting of Cd, Cr, Mn, Co, Fe, Ni, and M and Q are different and D is a dopant compatible with ZnSe on the III-V semiconductor material.
Claim 2
Dependent Claim
63 words
A passivating layer for III-V semiconductor materials comprising a layer of a composition of the formula Zn 1-x-y M x Q y Se:D wherein 0≦x≦1, 0≦y≦1, M and Q are an element selected from the group consisting of Cd, Cr, Mn, Co, Fe, Ni, and M and Q are different and D is a dopant compatible with ZnSe on the III-V semiconductor material.
Claim 3
Dependent Claim
20 words
A passivating layer according to claim 1 wherein the composition is in the form of an single crystal epitaxial layer.
Claim 4
Dependent Claim
9 words
A passivating layer according to claim 1 wherein y=0.
Claim 5
Dependent Claim
21 words
A passivating layer according to claim 1 wherein M and Q are selected from the group consisting of Mn and Fe.
Claim 6
Dependent Claim
14 words
A passivating layer according to claim 1 having a thickness less than 2 microns.
Claim 7
Dependent Claim
27 words
A passivating layer according to claim 2 wherein the III-V semiconductor material is selected from the group consisting of GaAs, InP, InSb, AlAs and ternary derivatives thereof.
Claim 8
Dependent Claim
9 words
A passivating layer according to claim 2 wherein y=0.
Claim 9
Dependent Claim
21 words
A passivating layer according to claim 2 wherein M and Q are selected from the group consisting of Mn and Fe.
Claim 10
Dependent Claim
14 words
A passivating layer according to claim 2 having a thickness less than 2 microns.
Claim 11
Dependent Claim
9 words
A passivating layer according to claim 3 wherein 0<x≦1.
Claim 12
Dependent Claim
19 words
A passivating layer according to claim 3 wherein M is selected from the group consisting of Mn and Fe.
Claim 13
Dependent Claim
11 words
A passivating layer according to claim 4 wherein M is Fe.
Claim 14
Dependent Claim
17 words
A passivating layer according to claim 6 wherein the ternary derivatives are (Ga,In)As; (Ga,Al)As; (Ga,In)P; (Ga,In)Sb; (Ga,Al)P.
Claim 15
Dependent Claim
9 words
A passivating layer according to claim 8 wherein 0<x≦1.
Claim 16
Dependent Claim
19 words
A passivating layer according to claim 7 wherein M is selected from the group consisting of Mn and Fe.
Claim 17
Dependent Claim
19 words
A passivating layer according to claim 10 wherein M is selected from the group consisting of Mn and Fe.
Claim 18
Dependent Claim
28 words
A passivating layer according to claim 15 wherein the III-V compound is selected from the group consisting of GaAs, GaP, InP, InSb and AlAs, and ternary derivatives thereof.
Claim 19
Dependent Claim
11 words
A passivating layer according to claim 16 wherein M is Fe.
Claim 20
Dependent Claim
29 words
A passivating layer according to claim 16 wherein the III-V compound is selected from the group consisting of GaAs, GaP, InP, and InSb and AlAs, and ternary derivatives thereof.
Claim 21
Dependent Claim
14 words
A passivating layer according to claim 18 having a thickness less than 2 microns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-08 | 2000-11-07 | 2001-05-09 | $7700.00 | Window Closed / Lapsed |