Abstract Disclosed is an integrated circuit comprising an electrically erasable programmable memory, the cells of which comprise a transistor with floating gate which is series connected with an access transistor, wherein, in order to prevent deterioration in the information stored in the transistors with floating gates, due to an excessive read voltage being applied to the cell, the circuit has, firstly, an additional cell constituted like the other cells and programmed in a state where its transistor with floating gate cannot be made conductive, the gate and the source of the transistor with floating gate of the additional cell being grounded, the drain and the gate of the access transistor receiving the memory reading voltage, and, secondly, a threshold comparator connected to the drain of the floating gate transistor to compare the voltage on this drain with the reading voltage and to give a signal in the event of any abnormal drop in the voltage at the drain. The invention can be applied to integrated circuits with memory.
An integrated circuit comprising an electrically erasable programmable memory, the cells of which comprise a transistor with floating gate which is series connected with an access transistor, wherein, in order to prevent deterioration in the information stored in the transistors with floating gates, due to an excessive read voltage being applied to the cell, the circuit has an additional cell constituted like the other cells and programmed in a state where its transistor with floating gate cannot be made conductive, the gate and the source of the transistor with floating gate of the additional cell being grounded, the drain and the gate of the access transistor receiving the memory reading voltage, and a threshold comparator connected to the drain of the floating gate transistor to compare the voltage on this drain with the reading voltage and to give a signal in the event of any abnormal drop in the voltage at the drain.
Claim 2
Dependent Claim
153 words
An integrated circuit comprising an electrically erasable programmable memory, the cells of which comprise a transistor with floating gate which is series connected with an access transistor, wherein, in order to prevent deterioration in the information stored in the transistors with floating gates, due to an excessive read voltage being applied to the cell, the circuit has an additional cell constituted like the other cells and programmed in a state where its transistor with floating gate cannot be made conductive, the gate and the source of the transistor with floating gate of the additional cell being grounded, the drain and the gate of the access transistor receiving the memory reading voltage, and a threshold comparator connected to the drain of the floating gate transistor to compare the voltage on this drain with the reading voltage and to give a signal in the event of any abnormal drop in the voltage at the drain.
Claim 3
Dependent Claim
43 words
An integrated circuit according to claim 1 wherein the access transistor is an n-channel MOS with a threshold voltage Vt and wherein the comparator gives a signal when the voltage at the drain becomes lower than the reading voltage minus the threshold voltage.
Claim 4
Dependent Claim
40 words
An integrated circuit according to claim 1 wherein the access transistor is a p-channel MOS transistor with a threshold voltage Vt and wherein the comparator gives a signal when the voltage on the drain becomes lower than the reading voltage.