Integrated electronic memory circuit with internal timing and operable in both latch-based and register-based systems

Claim 2

An integrated electronic memory circuit operating in response to an external memory access signal, comprising: memory means for storing binary data in an array of memory locations, said memory means having a characteristic write time period during which data storage into said array is enabled; first data signal providing means for providing input data signals to said memory means, for storage by said memory means as binary data at respective memory locations; and write signal generator means internal to the integrated electronic memory circuit for generating, in response to said external memory access signal, an internal write signal during a prescribed time period causing said memory means to accept input data signals from said first data signal providing means for storage in said array, including means for adjusting the prescribed time period to substantially equal in time duration to said characteristic write time period, and in duration no longer than a time period during which said first data signal providing means provides input data signals to said memory means.

Claim 3

The integrated electronic memory circuit of claim 1 wherein said write signal generator means includes delay line means for delaying the external memory access signal.

Claim 4

The integrated circuit of claim 2 wherein said delay line means provides a time delay to the clock signal substantially equal to the prescribed time period.

Claim 5

The integrated electronic memory circuit of claim 1 further comprising: first means, internal to the integrated electronic memory circuit, for receiving a plurality of address signals and for providing said address signals to said memory means for addressing respective memory locations.

Claim 6

The integrated electronic memory circuit of claim 1 further comprising: second means internal to the integrated electronic memory circuit for receiving signals representing stored data of said memory means to provide circuit output signals.

Claim 7

The integrated electronic memory circuit as in claim 4 being coupled to means for selectively operating said first means as a register or a latch.

Claim 8

The integrated electronic memory circuit as in claim 5 being coupled to means for selectively operating said second means as a register or a latch.

Claim 9

An electronic memory access system comprising: an integrated electronic memory circuit operating in response to an external memory access signal, comprising: memory means for storing binary data in an array of memory locations, said memory means having a characteristic write time period during which data storage into said array is enabled; first data signal providing means for providing input data signals to said memory means, for storage by said memory means as binary data at respective memory location; write signal generator means internal to the integrated electronic memory circuit for generating, in response to said external signal, an internal write signal during a prescribed time period causing said memory means to accept input data signals from said first data signal providing means for storage in said array, including means for adjusting the prescribed time period to substantially equal in time duration to said characteristic write time period, and in duration no longer than a time period during which said first data signal providing means provides input data signals to said memory means; a first means internal to the integrated electronic memory circuit for receiving address signals and providing said address signals to said memory means for addressing respective memory location; and a second means internal to the integrated electronic memory circuit for receiving data signals representing stored data of said memory means to provide circuit output signals; and control means coupled to said first means for selectively operating said first means as a latch or a register.

Claim 10

An electronic memory access system comprising: an integrated electronic memory circuit operating in response to an external memory access signal, comprising: memory means for storing binary data in an array of memory locations, said memory means having a characteristic write time period during which data storage into said array is enabled; first data signal providing means for providing input data signals to said memory means, for storage by said memory means as binary data at respective memory location; write signal generator means internal to the integrated electronic memory circuit for generating, in response to said external signal, an internal write signal during a prescribed time period causing said memory means to accept input data signals from said first data signal providing means for storage in said array, including means for adjusting the prescribed time period to substantially equal in time duration to said characteristic write time period, and in duration no longer than a time period during which said first data signal providing means provides input data signals to said memory means; a first means internal to the integrated electronic memory circuit for receiving address signals and providing said address signals to said memory means for addressing respective memory location; and a second means internal to the integrated electronic memory circuit for receiving data signals representing stored data of said memory means to provide circuit output signals; and control means coupled to said first means for selectively operating said first means as a latch or a register.

Claim 11

An electronic memory access system as in claim 8, further comprising control means coupled to said second means for selectively operating said second means as a latch or a register.

Claim 12

An electronic memory access system as in claim 8, wherein said control means comprises a programmable finite state machine.