US4825280A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrostatic discharge protection for semiconductor devices
Assignee: Texas Instruments Inc
•
Filing: 1986-10-01
•
Granted: 1989-04-25
•
Expires: 2006-10-01
Abstract
Abstract Protection against damage due to electrostatic discharge is provided by the addition of elongate conductor ballast resistor strips (18, 20, 22) formed in series with the transistor device (10). The material forming the conductor strips (18, 20, 22) includes a positive temperature coefficient, thereby offsetting the negative temperature coefficient of the semiconductor material forming the transistor (10). Plural conductor strips are arranged in parallel to reduce the overall resistance to the transistor (10). High current density areas are prevented by providing a plurality of sub-transistors (48) formed in plural individual moats (40-46). The individual current paths reduce the formation of filaments caused by the high concentrations of current in a small area.
Inventors
- 👤 Kueing L. Chen
- 👤 Roland H. Pang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:35
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/911
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
68 words
An electrostatic discharge protected semiconductor device, comprising: a bond pad used for connecting the semiconductor device to circuits external thereto; and a plurality of resistive conductor strips connected in parallel between said bond pad and the semiconductor device, each said conductor strip being constructed of a material which exhibits a positive temperature coefficient with respect to resistance, and having a resistance substantially identical to the other conductor strips.
Claim 2
Dependent Claim
68 words
An electrostatic discharge protected semiconductor device, comprising: a bond pad used for connecting the semiconductor device to circuits external thereto; and a plurality of resistive conductor strips connected in parallel between said bond pad and the semiconductor device, each said conductor strip being constructed of a material which exhibits a positive temperature coefficient with respect to resistance, and having a resistance substantially identical to the other conductor strips.
Claim 3
Dependent Claim
20 words
The electrostatic discharge protected device of claim 1 wherein each said conductor strip is formed over a thermally insulating material.
Claim 4
Dependent Claim
20 words
The electrostatic discharge protected device of claim 2 wherein each said conductor strip is formed under a thermally insulating material.
Claim 5
Dependent Claim
23 words
The electrostatic discharge protected device of claim 1 further including a silicide layer formed between each said conductor strip and the semiconductor device.
Claim 6
Dependent Claim
36 words
The electrostatic discharge protected device of claim 1 wherein said conductor strips comprise a input set of conductors to the device, and further including a set of output resistive conductor strips connected to the semiconductor device.
Claim 7
Dependent Claim
25 words
The electrostatic discharge protected device of claim 5 wherein said input set of conductors and said output set of conductors each include substantially equal resistances.
Claim 8
Dependent Claim
56 words
The electrostatic discharge protected device of claim 6 wherein said input set of conductors and said output set of conductors are arranged with respect to the semiconductor device such that a plurality of current paths are formed from the said input set of conductor strips through the device and to said output set of conductor strips.
Claim 9
Dependent Claim
37 words
The electrostatic discharge protected device of claim 7 wherein said input and output set of conductor strips are arranged with respect to said semiconductor device such that each said current path is of substantially the same resistance.
Claim 10
Dependent Claim
78 words
An insulated gate field effect transistor having electrostatic discharge protection, comprising: a semiconductor source region, a semiconductor drain region, and a conduction channel therebetween; a gate conductor isolated from said conduction channel; a source and drain conductor electrically contacting the respective semiconductor source and drain regions; and a resistance of a desired amount external to said source and drain region for limiting electrostatic discharge current to a desired amount such that damage to said transistor does not result.
Claim 11
Dependent Claim
78 words
An insulated gate field effect transistor having electrostatic discharge protection, comprising: a semiconductor source region, a semiconductor drain region, and a conduction channel therebetween; a gate conductor isolated from said conduction channel; a source and drain conductor electrically contacting the respective semiconductor source and drain regions; and a resistance of a desired amount external to said source and drain region for limiting electrostatic discharge current to a desired amount such that damage to said transistor does not result.
Claim 12
Dependent Claim
17 words
The transistor of claim 9 wherein said resistance is in one of said source or drain conductors.
Claim 13
Dependent Claim
15 words
The transistor of claim 9 wherein said resistance is in said drain and source conductors.
Claim 14
Dependent Claim
21 words
The transistor of claim 9 wherein said resistance comprises an elongate conductor strip having a desired resistance to effect said protection.
Claim 15
Dependent Claim
17 words
The transistor of claim 9 wherein said resistance comprises a conductor strip having a positive temperature coefficient.
Claim 16
Dependent Claim
25 words
The transistor of claim 9 further including a silicide interface between said source and drain conductors and the respective said semiconductor source and drain regions.
Claim 17
Dependent Claim
16 words
The transistor of claim 9 wherein said transistor comprises a plurality of substantially identical parallel-connected sub-transistors.
Claim 18
Dependent Claim
20 words
The transistor of claim 15 wherein each said sub-transistor is connected to a substantially identical resistance for limiting current therethrough.
Claim 19
Dependent Claim
24 words
The transistor of claim 15 further including a plurality of electrically independent semiconductor moats, and ones of said sub-transistors are located within said moats.
Claim 20
Dependent Claim
18 words
The transistor of claim 9 wherein said resistance includes elongate members which are thermally isolated from adjacent members.
Claim 21
Dependent Claim
31 words
The transistor of claim 9 wherein said resistance comprises a plurality of conductor strips each of substantially identical resistance and each connected to a conductor bus of a very low resistivity.
Claim 22
Dependent Claim
139 words
An output insulated gate field effect transistor having electrostatic discharge protection, comprising: a plurality of elongate parallel semiconductor moats; a plurality of paired source and drain regions in each said moat, said pairs of regions defining a corresponding plurality of sub-transistors; a plurality of gate conductors disposed transverse to said semiconductor moats and disposed between the regions of said paired source and drain regions, said gate conductors being connected together; a plurality of elongate drain conductor strips disposed transverse to said moats and connected to ones of said semiconductor drain regions, each said drain conductor strip having a resistive portion for limiting electrostatic current; and a plurality of elongate source conductor strips disposed transverse to said moats and connected to ones of said semiconductor source regions, each said source conductor strip having a resistive portion for limiting electrostatic current.
Claim 23
Dependent Claim
139 words
An output insulated gate field effect transistor having electrostatic discharge protection, comprising: a plurality of elongate parallel semiconductor moats; a plurality of paired source and drain regions in each said moat, said pairs of regions defining a corresponding plurality of sub-transistors; a plurality of gate conductors disposed transverse to said semiconductor moats and disposed between the regions of said paired source and drain regions, said gate conductors being connected together; a plurality of elongate drain conductor strips disposed transverse to said moats and connected to ones of said semiconductor drain regions, each said drain conductor strip having a resistive portion for limiting electrostatic current; and a plurality of elongate source conductor strips disposed transverse to said moats and connected to ones of said semiconductor source regions, each said source conductor strip having a resistive portion for limiting electrostatic current.
Claim 24
Dependent Claim
20 words
The transistor of claim 20 wherein said source and drain conductor strips comprise a material having a positive temperature coefficient.
Claim 25
Dependent Claim
27 words
The transistor of claim 20 wherein said semiconductor source and drain regions each include a silicide interface between the respective semiconductor regions and the respective conductor strips.
Claim 26
Dependent Claim
19 words
The transistor of claim 20 further including a low resistance bus to which each drain conductor strip is connected.
Claim 27
Dependent Claim
19 words
The transistor of claim 20 further including a low resistance bus to which each source conductor strip is connected.
Claim 28
Dependent Claim
20 words
The transistor of claim 20 wherein said gate conductors are each connected to each other at the opposing ends thereof.
Claim 29
Independent Claim
65 words
A method of protecting a semiconductor device from the effects of electrostatic discharges, comprising the steps of: forming a controlled resistance of a desired value from a material having a positive temperature coefficient with respect to resistance to limit the current of an electrostatic discharge; and connecting the controlled resistance between the semiconductor device and a terminal to which said electrostatic discharges can be applied.
Claim 30
Independent Claim
65 words
A method of protecting a semiconductor device from the effects of electrostatic discharges, comprising the steps of: forming a controlled resistance of a desired value from a material having a positive temperature coefficient with respect to resistance to limit the current of an electrostatic discharge; and connecting the controlled resistance between the semiconductor device and a terminal to which said electrostatic discharges can be applied.
Claim 31
Dependent Claim
22 words
The method of claim 26 further including forming said controlled resistance as plural parallel conductor strips each with essentially the same resistance.
Claim 32
Dependent Claim
42 words
The method of claim 27 wherein said plural parallel conductor strips comprise an input set of conductor strips, and further including forming a plurality of output conductor strips connected to the device, each said output conductor strip having essentially the same resistance.
Claim 33
Dependent Claim
52 words
The method of claim 28 further including forming each conductor strip of said input set in association with a respective conductor strip of said output set so that each said associated input and output conductor strip has a combined resistance essentially the same as the other associated input and output conductor strips.
Claim 34
Independent Claim
114 words
A method of fabricating an insulated gate field effect transistor with electrostatic discharge protection, comprising the steps of: forming an elongate semiconductor moat of a first conductivity type; forming plural pairs of source and drain semiconductor regions in said moat, said regions being formed with a second conductivity type material and spaced apart to define a conduction channel therebetween; forming a gate conductor adjacent to but insulated from each said conduction channel; forming a separate resistive conductor strip in electrical contact with each said source semiconductor region; connecting said resistive conductor strips together to define an input of the device; and connecting said drain semiconductor regions together to define an output of the device.
Claim 35
Independent Claim
114 words
A method of fabricating an insulated gate field effect transistor with electrostatic discharge protection, comprising the steps of: forming an elongate semiconductor moat of a first conductivity type; forming plural pairs of source and drain semiconductor regions in said moat, said regions being formed with a second conductivity type material and spaced apart to define a conduction channel therebetween; forming a gate conductor adjacent to but insulated from each said conduction channel; forming a separate resistive conductor strip in electrical contact with each said source semiconductor region; connecting said resistive conductor strips together to define an input of the device; and connecting said drain semiconductor regions together to define an output of the device.
Claim 36
Dependent Claim
24 words
The method of claim 30 further including forming said resistive conductor strips of a material having a positive temperature coefficient with respect to resistance.
Claim 37
Dependent Claim
51 words
The method of claim 30 further including forming said resistive strips to exhibit a resistance sufficient to protect that part of the device connected thereto from damaging electrostatic currents, and forming a desired number of said resistive conductor strips in parallel to achieve a desired total input resistance to the device.
Claim 38
Dependent Claim
43 words
The method of claim 30 further including forming a plurality of said semiconductor moats with a corresponding plurality of ones of said paired source and drain semiconductor regions, and connecting said resistive conductor strips of said source regions to said plurality of moats.
Claim 39
Dependent Claim
41 words
The method of claim 33 further including connecting all said drain regions together, and forming a plurality of said gate conductors associated with said source and drain semiconductor regions of said plurality of moats, and connection all said gate conductors together.
Claim 40
Dependent Claim
20 words
The method of claim 30 further including forming each said resistive conductor strip on a layer of thermally insulating material.
Claim 41
Dependent Claim
18 words
The method of claim 35 further including forming each said resistive conductive strip underlying a thermally insulating material.
Claim 42
Independent Claim
78 words
A method of fabricating an output semiconductor transistor with electrostatic discharge protection, comprising the steps of: forming a plurality of sub-transistors each with an input, an output and a control terminal; forming a plurality of resistive conductor strips, each connected in parallel to an input of a respective said sub-transistor; connecting each said conductor strip together to define an input to the output semiconductor transistor; and connecting said control inputs together and said outputs together of said sub-transistors.
Claim 43
Independent Claim
78 words
A method of fabricating an output semiconductor transistor with electrostatic discharge protection, comprising the steps of: forming a plurality of sub-transistors each with an input, an output and a control terminal; forming a plurality of resistive conductor strips, each connected in parallel to an input of a respective said sub-transistor; connecting each said conductor strip together to define an input to the output semiconductor transistor; and connecting said control inputs together and said outputs together of said sub-transistors.
Claim 44
Dependent Claim
38 words
The method of claim 37 wherein said plurality of sub-transistors define a first row of sub-transistors, and further including a second row of other sub-transistors each with an input connected to a different one said resistive conductor strips.
Claim 45
Dependent Claim
29 words
The method of claim 37 further including forming a plurality of other resistive conductor strips and connecting the outputs of said sub-transistors together through said other resistive conductor strips.
References Cited (Backward Citations)
US4605980A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-24 | 1992-10-24 | 1993-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-24 | 1996-10-24 | 1997-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-24 | 2000-10-24 | 2001-04-25 | $7700.00 | Window Closed / Lapsed |