Semiconductor manufacturing apparatus

Claim 2

A semiconductor manufacturing apparatus for depositing an insulating thin film on the surface of a semiconductor substrate in a vacuum vessel at an atmosphere of reduced pressure, comprising: a target composed of a material for said insulating thin film or of at least one of constituent elements of said material for the insulating thin film; wherein the semiconductor substrate is adapted to be disposed spaced apart from the target in a confronting relation therewith for permitting the insulating film of the target to be deposited thereon; a first radiofrequency power source for generating first radiofrequency power of a first frequency for application to the target; a succeptor electrode adapted to support the semiconductor substrate thereon; a second radiofrequency power source for generating second radiofrequency power of a second frequency for application to the succeptor electrode; and said first frequency being selected to be lower than said second frequency.

Claim 3

A semiconductor manufacturing apparatus according to claim 1, comprising, a target electrode provided adjoining said target and mounted on the target for applying first radio-frequency power of the first frequency to said target. a first matching circuit provided between said target electrode and said first radiofrequency power source for matching the target electrode to said first radiofrequency power source; a first band reject filter disposed between the matching circuit and the target electrode for selectively permitting only the first radiofrequency power to be transmitted to the target electrode; a second matching circuit disposed between the succeptor electrode and the second radiofrequency power source for matching the succeptor electrode to the second radiofrequency power source; and a second band reject filter disposed between the succeptor electrode and the matching circuit for selectively permitting only the second radiofrequency power to be transmitted to the succeptor electrode.

Claim 4

A semiconductor manufacturing apparatus according to claim 2, wherein said first frequency is 13.56 MHz while said second frequency is not less than 100 MHz.

Claim 5

A semiconductor manufacturing apparatus according to claim 2, wherein said second band reject filter used for said succeptor electrode comprises: a parallel L-C circuit presenting a maximum impedance at a resonance frequency of ##EQU4## where L 1 is the inductance of an inductor L and C 1 is the capacitance of a capacitor C connected in parallel with the inductor L.

Claim 6

A semiconductor manufacturing apparatus according to claim 2, comprising: permanent magnets in said vacuum vessel for use in magnetron discharge effected in the vicinity of the semiconductor substrate for promoting the rate of sputtering.

Claim 7

A semiconductor manufacturing apparatus according to claim 2, wherein said second radiofrequency power source for use in the radiofrequency discharge provides a radiofrequency having a wavelength at least twice the size of the semiconductor substrate for assuring uniform film making.

Claim 8

A semiconductor manufacturing apparatus according to claim 2, wherein said magnet for magnetron discharge comprises an elongated closed loop magnet.

Claim 9

A semiconductor manufacturing apparatus according to claim 2, comprising: magnets provided on the side of the semiconductor substrate for improving the efficiency of the resputtering.

Claim 10

A semiconductor manufacturing apparatus according to claim 2, wherein the second radiofrequency power source comprises: means for generating and applying to the succeptor powers of two different frequencies f 1 and f 2 , said frequency f 1 being higher than said frequency f 2 , said frequency f 1 being changed over to f 2 , wherein radiofrequency power of said frequency f 1 is first applied to said succeptor electrode in making a thin film, and thereafter said radiofrequency of said frequency f 2 is applied to form a further thick film on said thin film.

Claim 11

A semiconductor manufacturing apparatus according to claim 2, wherein said succeptor electrode has a plurality of radiofrequency powers of a plurality of different radiofrequencies corresponding to said powers applied from a plurality of the radiofrequency power sources thereto for reducing any damage on the substrate, the radiofrequency power first applied to the succeptor having a radiofrequency higher than the radiofrequencies of the other power sources.

Claim 12

A semiconductor manufacturing apparatus according to claim 10, wherein said plurality of radiofrequencies are selected so that not one of said plurality of radiofrequencies is an integer multiple of the radiofrequency of another radiofrequency in order to avoid nonlinear interaction among said plurality of radiofrequencies.

Claim 13

A semiconductor manufacturing apparatus according to claim 2, wherein said insulating thin film of the target is a material selected from the group consisting of SiO 2 , BPSG, silicon nitride, Al 2 O 3 , and AlN.