Solid state imaging apparatus and method with expanded dynamic range

Claim 2

Solid state imaging apparatus comprising: a charge-coupled frame transfer image sensor including: an image-sensitive integration region for forming a charge pattern representative of an incident image; a first image storage region in charge transfer relationship with one end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including first storage region signal read-out means, and a second image storage region in charge transfer relationship with an opposed end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including second storage region signal read-out means, and charge transfer means for shifting the charge pattern formed on said integration region into a selected one of said image storage regions, said imaging apparatus further comprising control means for setting a continuing series of field time periods and for defining in each field time period a long exposure period and a short exposure period and for controlling said charge transfer means to shift the charge pattern integrated during successive long and short exposure periods alternately into said first and second storage regions respectively and for controlling said first storage region signal read-out means and said second region signal read-out means to output data representing a series of long exposure shots and data representing a series of short exposure shots respectively, each series being output at the field rate defined by said field time period.

Claim 3

Solid state imaging apparatus according to claim 1, wherein said control means is operable to vary the lengths of the long and short exposure periods.

Claim 4

Solid state imaging apparatus according to claim 1, wherein said control means defines within each field time period a long exposure period, a short exposure period, and a further period, and the control means is operable to cause the charge pattern formed during said further period to become lost.

Claim 5

Sold state imaging apparatus according to claim 1, wherein said integration region and said first and second storage regions are formed on a common substrate.

Claim 6

Solid state imaging apparatus comprising: a charge-coupled frame transfer image sensor including: an image-sensitive integration region for forming a charge pattern representative of an incident image; a first image storage region in charge transfer relationship with one end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including first storage region signal read-out means, a second image storage region in charge transfer relationship with an opposed end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including second storage region signal read-out means, and charge transfer means for shifting the charge pattern formed on said integration region into a selected one of said image storage regions, said imaging apparatus further comprising: control means for setting a continuing series of field time periods and for defining in each field time period a long exposure period and a short exposure period and for controlling said charge transfer means to shift the charge pattern integrated during successive long and short exposure periods alternately into said first and second storage regions respectively, and means for receiving the outputs from said first and second region signal read-out means and for providing a digital signal in which the output from said first storage region is represented by the least significant digits of said digital signal and the output from said second storage region is representing the most significant bits of said digital signal.

Claim 7

Solid state imaging apparatus comprising: a charge-coupled frame transfer image sensor including: an image-sensitive integration region for forming a charge pattern representative of an incident image; a first image storage region in charge transfer relationship with one end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including first storage region signal read-out means, a second image storage region in charge transfer relationship with an opposed end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including second storage region signal read-out means, and charge transfer means for shifting the charge pattern formed on said integration region into a selected one of said image storage regions, said imaging apparatus further comprising: control means for setting a continuing series of field time periods and for defining in each field time period a long exposure period and a short exposure period and for controlling said charge transfer means to shift the charge pattern integrated during successive long and short exposure periods alternately into said first and second storage regions respectively, and means for receiving the outputs from said first and second region signal read-out means and for providing a digital signal in which the output from said first storage region is represented by the least significant digits of said digital signal and the output from said second storage region is representing the most significant bits of said digital signal.

Claim 8

Solid state imaging apparatus according to claim 5, wherein said control means is operable to vary the lengths of the long and short exposure periods.

Claim 9

Solid state imaging apparatus according to claim 5, wherein said control mans defines within each field time period a long exposure period, a short exposure period, and a further period, and the control means is operable to cause the charge pattern formed during said further period to become lost.

Claim 10

Solid state imaging apparatus according to claim 5, wherein said integration region and said first and second storage regions are formed on a common substrate.

Claim 11

Solid state imaging apparatus comprising: a charge-coupled frame transfer image sensor including: an image-sensitive integration region for forming a charge pattern representative of an incident image; a first image storage region in charge transfer relationship with one end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including first storage region signal read-out means, a second image storage region in charge transfer relationship with an opposed end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including second storage region signal read-out means, and charge transfer means for shifting the charge pattern formed on said integration region into a selected one of said image storage regions, said imaging apparatus further comprising: control means for setting a continuing series of field time periods and for setting in each field time period a first and second exposure period and for controlling said charge transfer means to shift the charge pattern integrated during said first and said second exposure periods alternately into said first and second storage regions respectively and for controlling said first and second storage region signal read-out means, and display means for being supplied with the data output from said first and second storage regions and displaying images incident on said image sensor at twice the field rate.

Claim 12

Solid state imaging apparatus comprising: a charge-coupled frame transfer image sensor including: an image-sensitive integration region for forming a charge pattern representative of an incident image; a first image storage region in charge transfer relationship with one end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including first storage region signal read-out means, a second image storage region in charge transfer relationship with an opposed end of said image integration region capable of receiving at least a major part of the charge pattern formed in said integration region and including second storage region signal read-out means, and charge transfer means for shifting the charge pattern formed on said integration region into a selected one of said image storage regions, said imaging apparatus further comprising: control means for setting a continuing series of field time periods and for setting in each field time period a first and second exposure period and for controlling said charge transfer means to shift the charge pattern integrated during said first and said second exposure periods alternately into said first and second storage regions respectively and for controlling said first and second storage region signal read-out means, and display means for being supplied with the data output from said first and second storage regions and displaying images incident on said image sensor at twice the field rate.

Claim 13

Solid state imaging apparatus according to claim 9, wherein said integration region and said first and second storage regions are formed on a common substrate.

Claim 14

Solid state imaging apparatus comprising: a charge-coupled frame transfer image sensor including: an image-sensitive integration region means for forming a charge pattern representative of an incident image, said integration region means having two opposed ends; a first image storage region means, in charge transfer relationship with one end of said image integration region means, for receiving at least a major part of said charge pattern formed in said integration region means, said first image storage region means including first storage region signal read-out means; and a second image storage region means, in charge transfer relationship with an opposed end of said image integration region, for receiving at least a major part of said charge pattern formed in said integration region means, said second image storage region means including second storage region signal read-out means; charge transfer means for shifting said charge pattern formed on said integration region into a selected one of said first or second image storage region means; and control means for setting a continuing series of field time periods, for defining, in each field time period, a long exposure period and a short exposure period, for controlling said charge transfer means to shift said charge pattern integrated during successive long and short exposure periods alternately into said first and second storage region means, respectively, and for controlling said first storage region signal read-out means and said second storage region signal read-out means to output data representing a series of long exposure shots and data representing a series a short exposure shots, respectively, each series being output at the field rate defined by said field time period.

Claim 15

Solid state imaging apparatus comprising: a charge-coupled frame transfer image sensor including: an image-sensitive integration region means for forming a charge pattern representative of an incident image, said integration region means having two opposed ends; a first image storage region means, in charge transfer relationship with one end of said image integration region means, for receiving at least a major part of said charge pattern formed in said integration region means, said first image storage region means including first storage region signal read-out means; and a second image storage region means, in charge transfer relationship with an opposed end of said image integration region, for receiving at least a major part of said charge pattern formed in said integration region means, said second image storage region means including second storage region signal read-out means; charge transfer means for shifting said charge pattern formed on said integration region into a selected one of said first or second image storage region means; and control means for setting a continuing series of field time periods, for defining, in each field time period, a long exposure period and a short exposure period, for controlling said charge transfer means to shift said charge pattern integrated during successive long and short exposure periods alternately into said first and second storage region means, respectively, and for controlling said first storage region signal read-out means and said second storage region signal read-out means to output data representing a series of long exposure shots and data representing a series a short exposure shots, respectively, each series being output at the field rate defined by said field time period.

Claim 16

A solid state imaging apparatus according to claim 11, wherein said control means includes means for varying the lengths of said long and short exposure periods.

Claim 17

A solid state imaging apparatus according to claim 11, wherein said control means further includes means for defining within each field time period a long exposure period, a short exposure period, and a further period, and said control means further includes means for causing the charge pattern formed during said further period to become lost.

Claim 18

A solid state imaging apparatus according to claim 11, wherein said integration region means, first storage region means, and second storage region means are formed on a common substrate.

Claim 19

A solid state imaging apparatus comprising a charge-coupled frame transfer image sensor including an image-sensitive integration region for forming a charge pattern representative of an incident image, first and second storage regions associate with respective opposed ends of said integration region, charge transfer means for shifting the charge pattern formed in said integration region into a selected one of said storage regions, control means for defining a continuing series of field time periods and for causing said charge transfer means to shift a charge pattern formed during one portion of said field time period into one of said storage means and to shift the charge pattern formed during another portion of said field time period into the other storage region, wherein said one portion is longer than said another portion, and output processor means for receiving data representations of the charge patterns in each of said storage regions and for processing said data to provide, for each field time period, representative data of extended dynamic range, said output processor means includes means for digitizing data representative of the charge patterns and frame store means of extended dynamic range for storing said image-representative data of extended dynamic range, and wherein the data representative of this charge pattern formed during said one portion of said field time period defines the least significant digits of the continued data and the data representative of the charge pattern formed during said another portion of said field time period defines the most significant digits thereof.

Claim 20

A solid state imaging apparatus comprising a charge-coupled frame transfer image sensor including an image-sensitive integration region for forming a charge pattern representative of an incident image, first and second storage regions associate with respective opposed ends of said integration region, charge transfer means for shifting the charge pattern formed in said integration region into a selected one of said storage regions, control means for defining a continuing series of field time periods and for causing said charge transfer means to shift a charge pattern formed during one portion of said field time period into one of said storage means and to shift the charge pattern formed during another portion of said field time period into the other storage region, wherein said one portion is longer than said another portion, and output processor means for receiving data representations of the charge patterns in each of said storage regions and for processing said data to provide, for each field time period, representative data of extended dynamic range, said output processor means includes means for digitizing data representative of the charge patterns and frame store means of extended dynamic range for storing said image-representative data of extended dynamic range, and wherein the data representative of this charge pattern formed during said one portion of said field time period defines the least significant digits of the continued data and the data representative of the charge pattern formed during said another portion of said field time period defines the most significant digits thereof.

Claim 21

Solid state imaging apparatus comprising a charge-coupled frame transfer image sensor including an image-sensitive integration region for forming a charge pattern representative of an incident image, first and second storage regions associated with respective opposed ends of said integration region, charge transfer means for shifting the charge pattern formed in said integration region into a selected one of said storage regions, control means for defining a continuing series of field time periods and for causing said charge transfer means to shift a charge pattern formed during one portion of said field time period into one of said storage regions and to shift the charge pattern formed during another portion of said field time period into the other storage region, wherein said one portion and said another portion are of substantially equal length, and output processor means for displaying images incident on said image sensor at twice the field rate.

Claim 22

Solid state imaging apparatus comprising a charge-coupled frame transfer image sensor including an image-sensitive integration region for forming a charge pattern representative of an incident image, first and second storage regions associated with respective opposed ends of said integration region, charge transfer means for shifting the charge pattern formed in said integration region into a selected one of said storage regions, control means for defining a continuing series of field time periods and for causing said charge transfer means to shift a charge pattern formed during one portion of said field time period into one of said storage regions and to shift the charge pattern formed during another portion of said field time period into the other storage region, wherein said one portion and said another portion are of substantially equal length, and output processor means for displaying images incident on said image sensor at twice the field rate.