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Patent US4820393A successfully refreshed from Google Patents.
US4820393A
Expired / Lapsed
US
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Titanium nitride sputter targets
Assignee: Tosoh SMD Inc
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Filing: 1987-05-11
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Granted: 1989-04-11
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Expires: 2007-05-11
Abstract
Abstract The present invention provides a sputter target for the deposition of titanium nitride films. The sputter target has a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride. The sputter target is prepared by subjecting titanium nitride powder to hot isostatic pressure.
Inventors
- 👤 Teodoro E. Brat
- 👤 Charles E. Wickersham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:09
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; B; B22; B22F; B22F3/00; B22F3/12; B22F3/14; B22F3/15; C23C14/06; C23C14/0641; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; B22F2302/00; B22F2302/20
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
32 words
A sputter target for deposition of titanium nitride films having a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride.
Claim 2
Dependent Claim
32 words
A sputter target for deposition of titanium nitride films having a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride.
Claim 3
Dependent Claim
27 words
The sputter target of claim 1 wherein said titanium nitride has a density of about 92 to 95% of the theoretical density of 100% pure titanium nitride.
Claim 4
Dependent Claim
20 words
The sputter target of claim 1 wherein said target is prepared by subjecting titanium nitride powder to hot isostatic pressure.
Claim 5
Dependent Claim
29 words
The sputter target of claim 3 wherein said titanium nitride powder is subjected to hot isostatic pressure at about 1350° C. and about 20,000 psi for about 4 hours.
Claim 6
Dependent Claim
29 words
The sputter target of claim 3 wherein said titanium nitride powder is subjected to hot isostatic pressure at about 1350° C. and about 15,000 psi for about 2 hours.
Claim 7
Dependent Claim
54 words
A titanium nitride film having a resistivity of about 30 to 70 micron-ohm-centimeters wherein said titanium nitride film is prepared by providing a titanium nitride target having a density of at least 90% of the theoretical density of 100% pure titanium nitride, and sputtering said titanium nitride target to deposit a titanium nitride film.
Claim 8
Dependent Claim
54 words
A titanium nitride film having a resistivity of about 30 to 70 micron-ohm-centimeters wherein said titanium nitride film is prepared by providing a titanium nitride target having a density of at least 90% of the theoretical density of 100% pure titanium nitride, and sputtering said titanium nitride target to deposit a titanium nitride film.
Claim 9
Dependent Claim
46 words
The titanium nitride film of claim 6 wherein said film is characterized in that said oxygen is present in the form of titanium oxynitrides at the surface of said film and as titanium oxide internally of said film, said titanium oxide being located along grain boundaries.
Claim 10
Dependent Claim
23 words
The titanium nitride film of claim 6 wherein said titanium nitride film is useful as a diffusion barrier layer in an integrated circuit.
Claim 11
Dependent Claim
19 words
The titanium nitride film of claim 6 wherein said titanium nitride film is useful as an etch stop layer.
Claim 12
Dependent Claim
52 words
A process for depositing a titanium nitride film on a substrate comprising the steps of providing a titanium nitride target having a density of at least 90% of the theoretical density of 100% pure titanium nitride; and sputtering said target under conditions designed to deposit a titanium nitride film on said substrate.
Claim 13
Dependent Claim
52 words
A process for depositing a titanium nitride film on a substrate comprising the steps of providing a titanium nitride target having a density of at least 90% of the theoretical density of 100% pure titanium nitride; and sputtering said target under conditions designed to deposit a titanium nitride film on said substrate.
Claim 14
Dependent Claim
22 words
The process of claim 10 wherein said step of providing said target includes subjecting a titanium nitride powder to hot isostatic pressing.
Claim 15
Dependent Claim
44 words
A sputter target for deposition of titanium nitride films having a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride, said titanium nitride comprising about 1,000 to 10,000 ppm by weight oxygen.
Claim 16
Dependent Claim
44 words
A sputter target for deposition of titanium nitride films having a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride, said titanium nitride comprising about 1,000 to 10,000 ppm by weight oxygen.
Claim 17
Dependent Claim
19 words
The sputtering target of claim 12 wherein said titanium nitride contains about 5000 to 7000 ppm by weight oxygen.
References Cited (Backward Citations)
US3036888A
Cited
US3451772A
Cited
US3798145A
Cited
US4006073A
Cited
US4544468A
Cited
US4663120A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-10 | 1992-10-10 | 1993-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-10 | 1996-10-10 | 1997-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-10 | 2000-10-10 | 2001-04-11 | $7700.00 | Window Closed / Lapsed |