Sensor

Claim 1

A field effect transistor type sensor for detecting a physical condition of the surrounding atmosphere comprising: a field effect transistor including a semiconductor body having spaced source and drain regions disposed in one major surface of the semiconductor body and defining a channel region between said source and drain regions, an insulating layer of silicon oxide or silicon nitride covering said one major surface, a gate electrode disposed directly on the outer surface of said insulating layer overlying said channel region, respective source and drain electrodes for said source and drain regions, and electrical contacts for said source, drain and gate electrodes; a condition sensitive dielectric layer, whose electrostatic capacity or resistance varies in response to a physical condition which is to be sensed in the atmosphere surrounding the sensor, disposed directly on said gate electrode and overlying said channel region; a further electrode disposed on at least the outer major surface of said condition sensitive dielectric layer; and means for electrically contacting said further electrode including a bonding pad disposed on a portion of said outer surface of said insulating layer which is laterally spaced from said gate electrode so that it does not overlie said channel region, with said bonding pad being comprised of a lamination of at least two layers including a titanium layer bound to said insulating layer and an outer layer of a noble metal covering said titanium layer; and wherein said gate electrode has an electrode structure which comprises a lamination of at least two layers composed of a titanium layer bound to said insulating layer and an outer noble metal layer covering said titanium layer, at least said condition sensitive dielectric layer and said further electrode are exposed to the surrounding atmosphere, said condition responsive layer extends to said outer surface of said insulating layer between said gate electrode and said bonding pad and extends laterally along said outer surface of said insulating layer to said bonding pad, and said further electrode extends over said condition responsive layer to said bonding pad and ohmically contacts same.