Patent US4814838A successfully refreshed from Google Patents.
US4814838A
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Semiconductor device and method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1987-06-02
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Granted: 1989-03-21
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Expires: 2007-06-02
Abstract
Abstract A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed. Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomic layer doping with an impurity. Owing to this construction, it is permitted to combine the optimum materials as the compound semiconductors, and the semiconductor device has its performance improved and its design versatility expanded.
Inventors
- 👤 Takao Kuroda
- 👤 Akiyoshi Watanabe
- 👤 Takao Miyazaki
- 👤 Hiroyoshi Matsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:26
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D62/60; H10D62/605; H10D64/00; H10D64/60; H10D64/602; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
70 words
A semiconductor device comprising: a first compound semiconductor which has a first lattice constant, a second compound semiconductor which is formed on said first compound semiconductor and which has a lattice constant unequal to the first lattice constant, said second compound semiconductor being formed of at least two layers, and at least one layer of impurity atom adsorption which is interposed between the adjacent layers of said second compound semiconductor.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising: a first compound semiconductor which has a first lattice constant, a second compound semiconductor which is formed on said first compound semiconductor and which has a lattice constant unequal to the first lattice constant, said second compound semiconductor being formed of at least two layers, and at least one layer of impurity atom adsorption which is interposed between the adjacent layers of said second compound semiconductor.
Claim 3
Dependent Claim
50 words
A semiconductor device as claimed in claim 1, wherein said first compound semiconductor is a quaternary mixed crystal expressed by (In x Ga 1-x ) (As y P 1-y ) (0≦x, y≦1), and said second compound semiconductor is a ternary mixed crystal expressed by (Ga 1-z Al z )As (0≦z≦0.7).
Claim 4
Dependent Claim
18 words
A semiconductor device as claimed in claim 1, wherein the impurity atom layer contains Si as an impurity.
Claim 5
Dependent Claim
56 words
A semiconductor device as claimed in claim 1, wherein that one of the plurality of layers of said second compound semiconductor which is most remote from said first compound semiconductor has a thickness of at most 600 Å, and each of the others of said plurality of layers has a thickness of 50 to 300 Å.
Claim 6
Dependent Claim
15 words
A semiconductor device as claimed in claim 1, wherein said first compound semiconductor is (InGa)As.
Claim 7
Dependent Claim
15 words
A semiconductor device as claimed in claim 1, wherein said second compound semiconductor is GaAs.
Claim 8
Dependent Claim
20 words
A semiconductor device as claimed in claim 1, wherein said second compound semiconductor is Ga 1-z Al z As (0≦z≦0.7).
Claim 9
Dependent Claim
35 words
The device as set forth in claim 1, wherein the layer of impurity atom adsorption is formed by adsorbing impurity atoms to an upper surface of one of the layers of the second compound semiconductor.
Claim 10
Dependent Claim
87 words
A semiconductor device comprising: a first compound semiconductor which has a first lattice constant, a second compound semiconductor which is formed on the first compound semiconductor and which has a second lattice constant unequal to the first lattice constant; and a layer of impurity atom adsorption in the second compound semiconductor, wherein the layer of impurity atom adsorption is formed by impurity atoms which are adsorbed in disclocations in the second compound semiconductor so as to suppress bending of the energy band of the second compound semiconductor.
Claim 11
Dependent Claim
87 words
A semiconductor device comprising: a first compound semiconductor which has a first lattice constant, a second compound semiconductor which is formed on the first compound semiconductor and which has a second lattice constant unequal to the first lattice constant; and a layer of impurity atom adsorption in the second compound semiconductor, wherein the layer of impurity atom adsorption is formed by impurity atoms which are adsorbed in disclocations in the second compound semiconductor so as to suppress bending of the energy band of the second compound semiconductor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-20 | 1992-09-19 | 1993-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-20 | 1996-09-19 | 1997-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-20 | 2000-09-19 | 2001-03-21 | $7700.00 | Window Closed / Lapsed |