Charge-coupled device

Claim 1

A charge-coupled device of the buried channel type comprising a semiconductor body with a major surface and having a layer-shaped region which adjoins said surface, a charge transport channel in the form of a surface region of the first conductivity type in said layer-shaped region, an insulating layer on the upper side of said surface region, a semiconductor region of the second conductivity type on the lower side of said surface region which forms a pn junction with the charge transport channel, channel-bounding zones for bounding said surface region at its sides, a row of clock electrodes extending transversely throughout the width of the charge transport channel and on the insulating layer, and an input stage having an input zone of the first conductivity type and a supply conductor for supplying electrical signals thereto, further comprising means for substantially eliminating AC leakage currents during operation, said means including said channel-bounding zones which comprise layer-shaped regions of the same conductivity type as and having a lower doped concentration per unit surface area than the charge transport channel, the clock electrodes and the insulating layer extending above at least a part of the channel-bounding zones, the insulating layer having at least substantially the same thickness above the channel-bounding zones as above the charge transport channel and said channel-bounding zones having at least substantially the same thickness as that of said charge transport channel, and means for draining charge from said channel-bounding zones during operation and comprising highly-doped thin surface zones of said first conductivity type located alongside said channel-bounding zones and having at least one electrical connection, portions of said clock electrodes and said insulating layer extending above at least a part of said highly-doped thin surface zones.