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US4809225A
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Memory cell with volatile and non-volatile portions having ferroelectric capacitors
Assignee: Ramtron International Corp
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Filing: 1987-07-02
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Granted: 1989-02-28
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Expires: 2007-07-02
Abstract
Abstract A memory cell includes an SRAM flip-flop cell having two nodes coupled to ferroelectric capacitors so that when the SRAM is powered down, the ferroelectric devices store data and upon power up, transfer the stored data to the SRAM cell. The ferroelectric devices can be bypassed during normal SRAM operations to reduce hysteresis fatigue.
Inventors
- 👤 Klaus Dimmler
- 👤 S. Sheffield Eaton, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:30
CPC Classifications
G; G11; G11C; G11C14/00; G11C14/0054; G11C14/0072; G11C11/00; G11C11/21; G11C11/22
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
158 words
A method of operating a memory cell having volatile and nonvolatile portions, said non-volatile portion including first and second ferroelectric capacitors each having first and second plate electrodes, the method comprising the steps of: storing complementary binary data in said volatile portion, including developing high and low voltages representing the complementary data at first and second nodes of the volatile memory cell portion; coupling said first and second nodes to the first plate electrodes of the first and second ferroelectric capacitors; polarizing only one of said ferroelectric capacitors by applying a low voltage to the second plate electrode thereof while the first plate electrode of said capacitor is coupled to said first or second node, said polarizing occurring in a first direction; thereafter polarizing the second ferroelectric capacitor by raising the voltage on the second plate electrode thereof while the first plate electrode is coupled to said first or second node, said polarizing occurring in a second direction.
Claim 2
Independent Claim
158 words
A method of operating a memory cell having volatile and nonvolatile portions, said non-volatile portion including first and second ferroelectric capacitors each having first and second plate electrodes, the method comprising the steps of: storing complementary binary data in said volatile portion, including developing high and low voltages representing the complementary data at first and second nodes of the volatile memory cell portion; coupling said first and second nodes to the first plate electrodes of the first and second ferroelectric capacitors; polarizing only one of said ferroelectric capacitors by applying a low voltage to the second plate electrode thereof while the first plate electrode of said capacitor is coupled to said first or second node, said polarizing occurring in a first direction; thereafter polarizing the second ferroelectric capacitor by raising the voltage on the second plate electrode thereof while the first plate electrode is coupled to said first or second node, said polarizing occurring in a second direction.
Claim 3
Independent Claim
65 words
The method according to claim, 1 wherein a third node is coupled to the second plate electrodes of each of said first and second ferroelectric capacitors, and wherein said polarizing steps comprise sequentially applying a low voltage and then a high voltage to said third node while coupling said first and second node to the first plate electrodes of said first and second ferroelectric capacitors.
Claim 4
Dependent Claim
18 words
The method according to claim 1 further comprising removing power from said memory cell after said polarizing steps.
Claim 5
Dependent Claim
34 words
The method according to claim 1 further comprising shorting said first plate electrodes of the first and second ferroelectric capacitors to ground during said storage of complementary data in the volatile memory cell portion.
Claim 6
Dependent Claim
101 words
The method according to claim 1 further comprising recalling the data from said ferroelectric capacitors to said volatile memory cell portion including: pre-charging said first and second nodes; coupling the first plate electrodes of the said first and second ferroelectric capacitors to the first and second nodes respectively; impressing a high voltage on a third node coupled to the second plate electrodes of both said first and second ferroelectric capacitors thereby to cause a polarization reversal in only one of said capacitors and causing a voltage to develop on said first or second node, thereby initializing the volatile memory cell portion.
Claim 7
Dependent Claim
31 words
The method according to claim 5 further comprising after said initializing, then applying a low voltage to said third node thereby to restore a polarization state to said one ferroelectric capacitors.
Claim 8
Independent Claim
152 words
A method of operating a memory cell including first and second ferroelectric capacitors each having first and second plate electrodes, the method including volatile and nonvolatile operations and comprising the steps of: storing complementary binary data in a volatile manner, including developing high and low voltages representing the complementary data at first and second nodes within the memory cell; coupling said first and second nodes to the first plate electrodes of the first and second ferroelectric capacitors; polarizing only one of said ferroelectric capacitors by applying a high voltage to the second plate electrode thereof while the first plate electrode thereof is coupled to said first or second node, said polarizing occurring in a first direction; thereafter polarizing the second ferroelectric capacitor by dropping the voltage on the second plate electrode thereof while the first plate electrode is coupled to said first or second node, said polarizing occurring in a second direction.
Claim 9
Independent Claim
152 words
A method of operating a memory cell including first and second ferroelectric capacitors each having first and second plate electrodes, the method including volatile and nonvolatile operations and comprising the steps of: storing complementary binary data in a volatile manner, including developing high and low voltages representing the complementary data at first and second nodes within the memory cell; coupling said first and second nodes to the first plate electrodes of the first and second ferroelectric capacitors; polarizing only one of said ferroelectric capacitors by applying a high voltage to the second plate electrode thereof while the first plate electrode thereof is coupled to said first or second node, said polarizing occurring in a first direction; thereafter polarizing the second ferroelectric capacitor by dropping the voltage on the second plate electrode thereof while the first plate electrode is coupled to said first or second node, said polarizing occurring in a second direction.
Claim 10
Dependent Claim
45 words
The method of claim 7 wherein a third node is coupled to said second plate electrodes of both of said first and second ferroelectric capacitors, and wherein said polarizing steps include sequentially applying a high voltage and then a low voltage to said third node.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-28 | 1992-08-29 | 1993-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-28 | 1996-08-29 | 1997-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-28 | 2000-08-29 | 2001-02-28 | $7700.00 | Window Closed / Lapsed |