Broadband electronic switch

Claim 2

A broadband electronic switch, comprising: (a) first and second solid state switch means in series with a signal path for a signal to be switched, each switch means comprising a field-effect transistor having an open state and a closed state, (b) means electrically connected to each switch means for reducing the ohmic resistance of the switch means and signal harmonic content generated by the switch means in the closed state, and (c) switch control means electrically connected to each switch means for selectably placing both switch means in the open and closed states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the switch means are in the open state and for minimizing transition time between the switch means open and closed states, the non-inductive means comprising a bipolar transistor connected in common-emitter configuration between the source and gate terminals of the first and second switch means, the collector of the bipolar transistor being connected to a source of deep negative voltage through a third field-effect transistor having its drain electrode coupled to the base of the bipolar transistor and its source electrode connected to said source of deep negative voltage, and having its gate electrode connected to a switching signal source.

Claim 3

A broadband electronic switch, comprising: (a) first and second field-effect transistors connected in commonsource cascade configuration defining a signal path for a signal to be switched from the drain electrode of the first transistor through the common-source connection to the drain electrode of the second transistor, each transistor having a conductive state and a non-conductive state, (b) a reverse recovery diode connected from the source electrode to the drain electrode of each transistor, and (c) switch control means coupled to the first and second transistors for selectably placing both transistors in the conductive and non-conductive states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the transistors are in the non-conductive state and for minimizing transistor parasitic capacitances during transition from the conductive to non-conductive states to minimize transition time, said non-inductive means comprising a bipolar transistor connected in common-emitter configuration between the source and gate terminals of the first and second field-effect transistors, the collector of the bipolar transistor being connected to a source of deep negative voltage through a third field-effect transistor having its drain electrode coupled to the base of the bipolar transistor and its source electrode connected to said source of deep negative voltage, and having its gate electrode connected to a switching signal source.

Claim 4

A broadband electronic switch, comprising: (a) first and second field-effect transistors connected in commonsource cascade configuration defining a signal path for a signal to be switched from the drain electrode of the first transistor through the common-source connection to the drain electrode of the second transistor, each transistor having a conductive state and a non-conductive state, (b) a reverse recovery diode connected from the source electrode to the drain electrode of each transistor, and (c) switch control means coupled to the first and second transistors for selectably placing both transistors in the conductive and non-conductive states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the transistors are in the non-conductive state and for minimizing transistor parasitic capacitances during transition from the conductive to non-conductive states to minimize transition time, said non-inductive means comprising a bipolar transistor connected in common-emitter configuration between the source and gate terminals of the first and second field-effect transistors, the collector of the bipolar transistor being connected to a source of deep negative voltage through a third field-effect transistor having its drain electrode coupled to the base of the bipolar transistor and its source electrode connected to said source of deep negative voltage, and having its gate electrode connected to a switching signal source.

Claim 5

A broadband electronic switch comprising: (a) first and second field effect transistors connected in common source cascade configuration defining a signal path for a signal to be switched from the drain electrode of the first transistor through the common source connection to the drain electrode of the second transistor, each transistor having a conductive state and a non-conductive state, (b) a reverse recovery diode connected from the source electrode to the drain electrode of each transistor, (c) switch control means coupled to the first and second transistors for selectably placing both transistors in the conductive and non-conductive states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the transistors are in the non-conductive state and for minimizing transistor parasitic capacitors during transition from the conductive to non-conductive states to minimize transition time, and (d) circuit means to prevent false turn-off of the switch when the first and second transistors are in the conductive state.

Claim 6

A broadband electronic switch comprising: (a) first and second field effect transistors connected in common source cascade configuration defining a signal path for a signal to be switched from the drain electrode of the first transistor through the common source connection to the drain electrode of the second transistor, each transistor having a conductive state and a non-conductive state, (b) a reverse recovery diode connected from the source electrode to the drain electrode of each transistor, (c) switch control means coupled to the first and second transistors for selectably placing both transistors in the conductive and non-conductive states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the transistors are in the non-conductive state and for minimizing transistor parasitic capacitors during transition from the conductive to non-conductive states to minimize transition time, and (d) circuit means to prevent false turn-off of the switch when the first and second transistors are in the conductive state.

Claim 7

A broadband electronic switch, comprising: (a) first and second field effect transistor switch means in series with a signal path for a signal to be switched, each switch means having an open state and a closed state, (b) means electrically connected to each switch means for reducing the ohmic resistance of the switch means and signal harmonic content generated by the switch means, said means being conductive when its associated switch is in the closed state, and (c) switch control means electrically connected to each switch means for selectably placing both switch means in the open and closed states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the switch means are in the open state and for minimizing transition time between the switch means open and closed states, said non-inductive means comprising high-impedance circuit means for applying a high voltage bias to each switch means, including a bipolar transistor connected in common-emitter configuration between the source and gate terminals of the first and second field-effect transistors, the collector of the bipolar transistor being connected to a source of deep negative voltage through a third field-effect transistor.

Claim 8

A broadband electronic switch, comprising: (a) first and second field effect transistor switch means in series with a signal path for a signal to be switched, each switch means having an open state and a closed state, (b) means electrically connected to each switch means for reducing the ohmic resistance of the switch means and signal harmonic content generated by the switch means, said means being conductive when its associated switch is in the closed state, and (c) switch control means electrically connected to each switch means for selectably placing both switch means in the open and closed states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the switch means are in the open state and for minimizing transition time between the switch means open and closed states, said non-inductive means comprising high-impedance circuit means for applying a high voltage bias to each switch means, including a bipolar transistor connected in common-emitter configuration between the source and gate terminals of the first and second field-effect transistors, the collector of the bipolar transistor being connected to a source of deep negative voltage through a third field-effect transistor.

Claim 9

A broadband electronic switch, comprising: (a) first and second field-effect transistors connected in commonsource cascade configuration defining a signal path for a signal to be switched from the drain electrode of the first transistor through the common-source connection to the drain electrode of the second transistor, each transistor having a conductive state and a non-conductive state, (b) a reverse recovery diode connected from the source electrode to the drain electrode of each transistor, and (c) switch control means coupled to the first and second transistors for selectably placing both transistors in the conductive and non-conductive states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the transistors are in the non-conductive state and for minimizing transistor parasitic capacitances during transition from the conductive to non-conductive states to minimize transition time, said non-inductive means comprising high-impedance circuit means for applying a high-voltage bias to each field-effect transistor, including a bipolar transistor connected in common-emitter configuration between the source and gate terminals of the first and second field-effect transistors, the collector of the bipolar transistor being connected to a source of deep negative voltage through a third field-effect transistor.

Claim 10

A broadband electronic switch, comprising: (a) first and second field-effect transistors connected in commonsource cascade configuration defining a signal path for a signal to be switched from the drain electrode of the first transistor through the common-source connection to the drain electrode of the second transistor, each transistor having a conductive state and a non-conductive state, (b) a reverse recovery diode connected from the source electrode to the drain electrode of each transistor, and (c) switch control means coupled to the first and second transistors for selectably placing both transistors in the conductive and non-conductive states, the switch control means having non-inductive means for attenuating signal leakage from the signal path into the switch control means when the transistors are in the non-conductive state and for minimizing transistor parasitic capacitances during transition from the conductive to non-conductive states to minimize transition time, said non-inductive means comprising high-impedance circuit means for applying a high-voltage bias to each field-effect transistor, including a bipolar transistor connected in common-emitter configuration between the source and gate terminals of the first and second field-effect transistors, the collector of the bipolar transistor being connected to a source of deep negative voltage through a third field-effect transistor.