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US4808554A
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Semiconductor device manufacturing method
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1987-11-10
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Granted: 1989-02-28
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Expires: 2007-11-10
Abstract
Abstract An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:03
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0456; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; C23C16/52; C23C16/54; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32018; H01J37/32321; H01J37/32339; H01J37/32431; H01J37/3266; H01J37/32678; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3412; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/0431; H10P72/0436; H10P72/0468; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3321; Y; Y10; Y10S; Y10S438/00; Y10S438/931; Y10S438/935
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
213 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: evacuating a vacuum chamber by evacuating means; introducing a non-reactive gas into a first portion of said vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and carbon, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x C 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber; wherein said chemical vapor reaction is carried out at a negative pressure which is maintained at less than 10 -2 -10 -5 Torr by the cooperation of a vacuum pump and a turbo molecular pump, whereby said vacuum pump operates to reduce the pressure to a level at which said turbo molecular pump then operates to reduce the pressure in said vacuum chamber to less than 10 -2 -10 -5 Torr.
Claim 2
Dependent Claim
213 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: evacuating a vacuum chamber by evacuating means; introducing a non-reactive gas into a first portion of said vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and carbon, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x C 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber; wherein said chemical vapor reaction is carried out at a negative pressure which is maintained at less than 10 -2 -10 -5 Torr by the cooperation of a vacuum pump and a turbo molecular pump, whereby said vacuum pump operates to reduce the pressure to a level at which said turbo molecular pump then operates to reduce the pressure in said vacuum chamber to less than 10 -2 -10 -5 Torr.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said reactive gas is a mixture of silane and a methyl silane.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said methyl silane is dimethyl silane.
Claim 5
Dependent Claim
28 words
The method of claim 2 wherein said Si x C 1-x semiconductor is formed as a p-type semiconductor by introducing a boron compound gas as a dopant gas.
Claim 6
Dependent Claim
16 words
The method of claim 4 wherein said boron compound gas is diborane diluted with silane gas.
Claim 7
Dependent Claim
120 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and carbon, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x C 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber.
Claim 8
Dependent Claim
120 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and carbon, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x C 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber.
Claim 9
Dependent Claim
48 words
The method of claim 6 wherein said first portion of said vacuum chamber comprises a resonating space subjected to said magnetic field and receiving said microwaves, and said second portion of said vacuum chamber comprises a reaction space intercommunicating with said resonating space and holding said substrate therein.
Claim 10
Dependent Claim
40 words
The method of claim 7 wherein said reactive gas is inputted to said reaction space, and said reactive gas is mixed with said non-reactive gas excited by the microwaves and is energized by the energy of said excited non-reactive gas.
Claim 11
Dependent Claim
13 words
The method of claim 6 wherein said reactive gas contains a methyl silane.
Claim 12
Dependent Claim
12 words
The method of claim 9 wherein said methyl silane is dimethyl silane.
Claim 13
Dependent Claim
19 words
The method of claim 6 wherein said reactive gas is a mixture of a silicide gas and carbide gas.
Claim 14
Dependent Claim
33 words
The method of claim 11 wherein said Si x C 1-x semiconductor is formed as a p-type semiconductor by introducing a boron compound gas as a dopant gas together with said reactive gas.
Claim 15
Dependent Claim
17 words
The method of claim 12 wherein said boron compound gas is diborane gas diluted with silane gas.
Claim 16
Dependent Claim
18 words
The method of claim 6 wherein said reactive gas is a mixture of silane and a methyl silane.
Claim 17
Dependent Claim
18 words
The method of claim 8 wherein said reactive gas includes a phosphorus compound gas as a dopant gas.
Claim 18
Dependent Claim
20 words
The method of claim 6 wherein the energizing step of said non-reactive gas is carried out by electron cyclotron resonance.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-28 | 1992-08-29 | 1993-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-28 | 1996-08-29 | 1997-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-28 | 2000-08-29 | 2001-02-28 | $7700.00 | Window Closed / Lapsed |