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US4808553A
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Semiconductor device manufacturing method
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1987-11-10
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Granted: 1989-02-28
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Expires: 2007-11-10
Abstract
Abstract An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 01:21
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0456; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; C23C16/52; C23C16/54; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32018; H01J37/32321; H01J37/32339; H01J37/32431; H01J37/3266; H01J37/32678; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3412; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/0431; H10P72/0436; H10P72/0468; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3321; Y; Y10; Y10S; Y10S438/00; Y10S438/931; Y10S438/935
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
135 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize, under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and germanium, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x Ge 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber.
Claim 2
Dependent Claim
135 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize, under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and germanium, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x Ge 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber.
Claim 3
Dependent Claim
137 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize, under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and tin, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x [Ge 1-x ]Sn 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber.
Claim 4
Dependent Claim
137 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize, under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of silicon and tin, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a Si x [Ge 1-x ]Sn 1-x (0<X<1) semiconductor layer on a substrate placed in said vacuum chamber.
Claim 5
Dependent Claim
135 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize, under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of carbon and germanium, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a C x Ge 1-x (0<x<1) semiconductor layer on a substrate placed in said vacuum chamber.
Claim 6
Dependent Claim
135 words
A semiconductor device manufacturing method by chemical vapor reaction comprising the steps of: introducing a non-reactive gas into a first portion of a vacuum chamber; subjecting said non-reactive gas to a magnetic field; applying microwaves to said non-reactive gas to excite said non-reactive gas and energize, under the existence of said magnetic field, charged particles of said non-reactive gas; mixing said non-reactive gas so energized with a reactive gas introduced into a second portion of said vacuum chamber to energize said reactive gas; and subjecting said reactive gas so energized to a glow discharge enhanced chemical vapor reaction of carbon and germanium, whereupon, by virtue of the dual energizing of said reactive gas, said reactive gas decomposes to deposit a C x Ge 1-x (0<x<1) semiconductor layer on a substrate placed in said vacuum chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-28 | 1992-08-29 | 1993-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-28 | 1996-08-29 | 1997-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-28 | 2000-08-29 | 2001-02-28 | $7700.00 | Window Closed / Lapsed |