Patent US4807561A successfully refreshed from Google Patents.
US4807561A
Expired / Lapsed
US
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Semiconductor vapor phase growth apparatus
Assignee: Shibaura Machine Co Ltd
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Filing: 1987-05-12
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Granted: 1989-02-28
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Expires: 2007-05-12
Abstract
Abstract A vapor phase growth substrate is conveyed into a heated atomosphere, and vapor phase growth gas is supplied from a nozzle connected to a gas supply means to the substrate in the middle portion of conveyance. Process program information relating to the conveying speed of the substrate, the heating temperature, the gas flow rate and the types of the gases being used is stored, in advance, in a memory of a controller, the information is read from the memory, to adoptively control the conveying speed of the substrate, the heating temperature, and the gas supply.
Inventors
- 👤 Hitoshi Ebata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:30
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/16; C30B25/165
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
162 words
A semiconductor vapor phase growth apparatus comprising: substrate conveying means for conveying a substrate of silicone or the like, heating means for heating said substrate conveyed by said substrate conveying means, gas supply means for supplying various gases necessary for vapor phase growth on said substrate, and a controller for controlling said substrate conveying means, said heating means, and said gas supply means, said controller having a memory area for storing a process program including information concerning conveying speed of the substrate conveying means, heating temperatures of the heating means, the type of gas to be used of the gas supply means and its flow rate, and means for controlling the substrate conveying means, the heating means, and the gas supply means, in accordance with the process program stored in the memory area, wherein said apparatus further comprises a control means including a self-diagnosis function for stopping supply of substrates into said substrate conveying means when a malfunction of said apparatus occurs.
Claim 2
Dependent Claim
162 words
A semiconductor vapor phase growth apparatus comprising: substrate conveying means for conveying a substrate of silicone or the like, heating means for heating said substrate conveyed by said substrate conveying means, gas supply means for supplying various gases necessary for vapor phase growth on said substrate, and a controller for controlling said substrate conveying means, said heating means, and said gas supply means, said controller having a memory area for storing a process program including information concerning conveying speed of the substrate conveying means, heating temperatures of the heating means, the type of gas to be used of the gas supply means and its flow rate, and means for controlling the substrate conveying means, the heating means, and the gas supply means, in accordance with the process program stored in the memory area, wherein said apparatus further comprises a control means including a self-diagnosis function for stopping supply of substrates into said substrate conveying means when a malfunction of said apparatus occurs.
Claim 3
Dependent Claim
22 words
The semiconductor vapor phase growth apparatus according to claim 1, wherein said memory are stores a plurality of types of process programs.
Claim 4
Dependent Claim
25 words
The semiconductor vapor phase growth apparatus according to claim 1, further comprising: substrate conveying in and out means for conveying the substrate into conveying means,
Claim 5
Dependent Claim
29 words
said controller having a memory area for storing the conveyed state of the substrate, and means for controlling conveying out means according to data stored in the memory area.
Claim 6
Dependent Claim
29 words
said controller having a memory area for storing the conveyed state of the substrate, and means for controlling conveying out means according to data stored in the memory area.
Claim 7
Dependent Claim
41 words
The semiconductor vapor phase growth apparatus according to claim 3, wherein said memory area for storing the conveyed state of the substrate is able to store the number and positions of substrates in respective units (trays) of the substrate conveying means.
Claim 8
Dependent Claim
68 words
The semiconductor vapor phase growth apparatus according to claim 1, further comprising: substrate conveying in and out means provided for said substrate conveying means; a memory area provided in said controller for storing data representing cassette station No. of the substrate to be conveyed in; and means for controlling conveying out operation of said substrate conveying in and out means according to data stored in the memory area.
References Cited (Backward Citations)
US3790404A
Cited
US4430959A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-28 | 1992-08-29 | 1993-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-28 | 1996-08-29 | 1997-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-28 | 2000-08-29 | 2001-02-28 | $7700.00 | Window Closed / Lapsed |