Nonvolatile memory device with a high number of cycle programming endurance

Claim 1

An electrically alterable, nonvolatile memory device, organized as a rows and columns array of addressable memory cells wherein each cell of said array is formed by a pair of n-channel, EEPROM type, elementary memory cells having a source, a drain and a control gate connected substantially in parallel with each other, and the two elementary EEPROM cells of the pair share a single select transistor; a bias voltage generating circuit for biasing the control gates of said memory cells is essentially a current mirror having a virgin elementary EEPROM type memory cell and a broken elementary EEPROM type memory cell respectively in the two branches thereof, and generates a biasing voltage V CG at an output node, corresponding to the control gate node of the said virgin cell, having a value satisfying the equality relationship of the currents flowing along the two branches of the current mirror; reading sense amplifiers for reading the bit stored in any addressed memory cell comprise a two input comparator, one input thereof being connected through addressing means and through said select transistor to one of said memory cells of the array, the other input thereof being connected through means simulating said addressing means and said select transistor to a reference cell formed by a pair of virgin n-channel, EEPROM TYPE, elementary memory cells similar to the ones forming said memory array cells and having a source, a drain and a control gate substantially connected in parallel with each other; the said reference cell establishing a comparator threshold in terms of current given by the relation: I.sub.sensing =2I.sub.virgin ; the bit reading threshold being given by the following relation: I .sub.Cell erased +I .sub.Cell virgin <I.sub.sensing <I .sub.Cell written +I .sub.Cell virgin.