Abstract A solid-state image pickup apparatus having a plurality of row lines to which a row selection control signal is applied, a plurality of column lines to which a column selection control signal is applied, a plurality of static induction transistors whose source electrodes are connected to the column lines, capacitors which connects the gate electrodes of the static induction transistors to the row lines, column selecting transistors and resetting transistors connected to the column lines, in which, to perform non-destructive readout, the row selection control signal is set to low level when the resetting transistors operate. At the time of non-destructive readout, optical signal charges which have been accumulated in the capacitors are not discharged, so that outputs in accordance with optical signal charges can be read out again.
Inventors
👤 Junichi Nakamura
👤 Toyokazu Mizoguchi
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-08 05:19
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/70; H04N25/76
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
105 words
A solid-state image pickup apparatus, comprising: a plurality of row lines to which a row selection control signal is applied; a plurality of column lines to which a column selection control signal is applied; a plurality of static induction transistors whose source electrodes are connected to said column lines; capacitors which connect the gate electrodes of said static induction transistors to the row lines; transistors having gates connected to said column lines with or without switch intermediaries; and resetting transistors connected to said column lines, wherein, to perform non-destructive readout, said row selection control signal is set to low level when said resetting transistors operate.
Claim 2
Dependent Claim
105 words
A solid-state image pickup apparatus, comprising: a plurality of row lines to which a row selection control signal is applied; a plurality of column lines to which a column selection control signal is applied; a plurality of static induction transistors whose source electrodes are connected to said column lines; capacitors which connect the gate electrodes of said static induction transistors to the row lines; transistors having gates connected to said column lines with or without switch intermediaries; and resetting transistors connected to said column lines, wherein, to perform non-destructive readout, said row selection control signal is set to low level when said resetting transistors operate.