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US4806202A
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Field enhanced tunnel oxide on treated substrates
Assignee: Intel Corp
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Filing: 1987-10-05
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Granted: 1989-02-21
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Expires: 2007-10-05
Abstract
Abstract A method for growing tunnel oxides on a specially treated substrate surface. The method comprises steps for roughening the substrate surface to induce low tunneling voltage in the subsequently grown tunnel oxide layer. The tunnel oxide layer is grown in a low temperature steam cycle to further provide enhanced tunneling. The surface treatment comprises the steps of growing a first oxide layer to seal the surface of the substrate followed by growing a second oxide on the first oxide layer. In the preferred embodiment, a plasma etch utilizing an oxide etcher with high energy ion bombardment and an aluminum electrode is utilized to etch through the first and second oxide layers. The aluminum electrode causes sputtered aluminum on the second oxide layer's surface. The sputtered aluminum blocks the anisotropic etching leaving a grass type oxide residue on the substrate surface. The etching continues, overetching into the substrate surface. The grass type oxide residue causes pitting to occur on the substrate surface. This pitting, resulting in sharpened features on the surface, yields enhanced tunneling characteristics for a subsequently grown tunnel oxide layer. The residue is then removed and the surface cleaned. The tunnel oxide layer is grown in a low temperture steam cycle to preserve and enhance the sharp tips for the purpose of enhanced tunneling.
Inventors
- 👤 Daniel N. Tang
- 👤 Himanshu Choksi
- 👤 Simon Wang
- 👤 Simon M. Tam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/031; H10D64/035; Y; Y10; Y10S; Y10S148/00; Y10S148/058; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
109 words
A process for growing a tunnel oxide on a silicon substrate, comprising the steps of: growing a first oxide layer on said silicon substrate; depositing a second oxide layer on said first oxide layer; plasma etching said second and said first oxide layers with an anisotropic oxide etcher utilizing high energy ion bombardment with a metal electrode, said etcher sputtering metal on said second oxide layer, said metal causing grass-type formation during said etching; overetching through said first and second oxide layers and into said silicon substrate surface forming a pitted substrate surface. removing residual first and second oxide layers; growing a third oxide layer on said pitted substrate.
Claim 2
Dependent Claim
109 words
A process for growing a tunnel oxide on a silicon substrate, comprising the steps of: growing a first oxide layer on said silicon substrate; depositing a second oxide layer on said first oxide layer; plasma etching said second and said first oxide layers with an anisotropic oxide etcher utilizing high energy ion bombardment with a metal electrode, said etcher sputtering metal on said second oxide layer, said metal causing grass-type formation during said etching; overetching through said first and second oxide layers and into said silicon substrate surface forming a pitted substrate surface. removing residual first and second oxide layers; growing a third oxide layer on said pitted substrate.
Claim 3
Dependent Claim
22 words
The process, as recited in claim 1, wherein said first oxide layer is thermally grown to a thickness of approximately 250 Angstroms.
Claim 4
Dependent Claim
28 words
The process, as recited by claim 1, wherein said second oxide layer is deposited by a chemical vapor deposition (CVD) process to a thickness of approximately 5000 Angstroms.
Claim 5
Dependent Claim
27 words
The process, as recited in claim 1, wherein said third oxide layer is grown in a low temperature steam cycle, enhancing tips of said pitted substrate surface.
Claim 6
Dependent Claim
30 words
The process as recited in claim 1, further comprising the step of cleaning said substrate after removing residual first and second oxide layers and before growing said third oxide layer.
Claim 7
Dependent Claim
158 words
In a process for growing a tunnel oxide on a substrate, said tunnel oxide allowing the charging and discharging of a floating gate in an erasable electrically programmable read only memory (EEPROM), an improvement comprising the steps of: thermally growing a first oxide layer on said substrate; depositing a second oxide layer on said substrate by a chemical vapor deposition (CVD) process; plasma etching said first and second oxide layers using an anisotropic oxide etcher with high energy ion bombardment and an aluminum electrode, said aluminum electrode causing sputtering of aluminum onto the surface of said second oxide layer, said sputtered aluminum causing grass type oxide residue to occur on the surface of said substrate; overetching through said first and second oxide layers and into said substrate surfaces, causing pitting of said substrate surface during said overetch; removing said grass type oxide residue; cleaning the pitted surface of said substrate; growing a third oxide layer on said substrate.
Claim 8
Dependent Claim
158 words
In a process for growing a tunnel oxide on a substrate, said tunnel oxide allowing the charging and discharging of a floating gate in an erasable electrically programmable read only memory (EEPROM), an improvement comprising the steps of: thermally growing a first oxide layer on said substrate; depositing a second oxide layer on said substrate by a chemical vapor deposition (CVD) process; plasma etching said first and second oxide layers using an anisotropic oxide etcher with high energy ion bombardment and an aluminum electrode, said aluminum electrode causing sputtering of aluminum onto the surface of said second oxide layer, said sputtered aluminum causing grass type oxide residue to occur on the surface of said substrate; overetching through said first and second oxide layers and into said substrate surfaces, causing pitting of said substrate surface during said overetch; removing said grass type oxide residue; cleaning the pitted surface of said substrate; growing a third oxide layer on said substrate.
Claim 9
Dependent Claim
17 words
The process, as recited by claim 6, wherein said first oxide layer is approximately 250 Angstroms thick.
Claim 10
Dependent Claim
17 words
The process, as recited by claim 7, wherein said second oxide layer is approximately 5000 Angstroms thick.
Claim 11
Dependent Claim
22 words
The process, as recited by claim 8, wherein said grass type oxide residue is removed by a hydrogen fluoride (HF) wet etch.
Claim 12
Dependent Claim
17 words
The process, as recited by claim 9, wherein said third oxide layer is approximately 500 Angstroms thick.
Claim 13
Dependent Claim
41 words
The process, as recited by claim 6, wherein said third oxide layer is grown in low temperature steam cycle thereby enhancing the tips of the pitted surface of said substrate such that electron tunneling can occur at a lower tunneling voltage.
References Cited (Backward Citations)
US3966577A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-21 | 1992-08-22 | 1993-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-21 | 1996-08-22 | 1997-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-21 | 2000-08-22 | 2001-02-21 | $7700.00 | Window Closed / Lapsed |