US4804614A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoresist process of fabricating microelectronic circuits using water processable diazonium compound containing contrast enhancement layer
Assignee: Aerospace Corp
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Filing: 1986-10-21
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Granted: 1989-02-14
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Expires: 2006-10-21
Abstract
Abstract In a photolithographic process for fabricating microelectronic circuits, a contrast enhancing layer soluble in either water or developer that is selectively applied to a photoresist layer residing on a substrate.
Inventors
- 👤 Linda F. Halle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:31
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
133 words
A photolithographic process for fabricating microelectronic circuits on a substrate comprising: a. applying on the substrate a layer of positive photoresist, said photoresist being developable in an aqueous solution after exposure to predetermined wavelengths; b. applying directly on the photoresist a contrast enhancement layer consisting of a water soluble binder and a water soluble diazonium compound bleachable at the predetermined wavelengths; c. exposing the contrast enhancement layer to an image formed by light at the predetermined wavelengths, thereby bleaching the contrast enhancement layer and exposing the photoresist and rendering the photoresist developable; d. immersing the coated substrate in an aqueous solution of photoresist developer, thereby dissolving the contrast enhancement layer with photoresist developer and developing the photoresist, resulting in the complete removal of the contrast enhancement layer and the development of the photoresist.
Claim 2
Dependent Claim
133 words
A photolithographic process for fabricating microelectronic circuits on a substrate comprising: a. applying on the substrate a layer of positive photoresist, said photoresist being developable in an aqueous solution after exposure to predetermined wavelengths; b. applying directly on the photoresist a contrast enhancement layer consisting of a water soluble binder and a water soluble diazonium compound bleachable at the predetermined wavelengths; c. exposing the contrast enhancement layer to an image formed by light at the predetermined wavelengths, thereby bleaching the contrast enhancement layer and exposing the photoresist and rendering the photoresist developable; d. immersing the coated substrate in an aqueous solution of photoresist developer, thereby dissolving the contrast enhancement layer with photoresist developer and developing the photoresist, resulting in the complete removal of the contrast enhancement layer and the development of the photoresist.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-14 | 1992-08-15 | 1993-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-14 | 1996-08-15 | 1997-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-14 | 2000-08-15 | 2001-02-14 | $7700.00 | Window Closed / Lapsed |