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US4804614A Expired / Lapsed US ⏱️ 0.0 years remaining

Photoresist process of fabricating microelectronic circuits using water processable diazonium compound containing contrast enhancement layer

Assignee: Aerospace Corp
•
Filing: 1986-10-21
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Granted: 1989-02-14
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Expires: 2006-10-21
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Abstract

Abstract In a photolithographic process for fabricating microelectronic circuits, a contrast enhancing layer soluble in either water or developer that is selectively applied to a photoresist layer residing on a substrate.

Inventors

  • 👤 Linda F. Halle

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 20:31
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 133 words
A photolithographic process for fabricating microelectronic circuits on a substrate comprising: a. applying on the substrate a layer of positive photoresist, said photoresist being developable in an aqueous solution after exposure to predetermined wavelengths; b. applying directly on the photoresist a contrast enhancement layer consisting of a water soluble binder and a water soluble diazonium compound bleachable at the predetermined wavelengths; c. exposing the contrast enhancement layer to an image formed by light at the predetermined wavelengths, thereby bleaching the contrast enhancement layer and exposing the photoresist and rendering the photoresist developable; d. immersing the coated substrate in an aqueous solution of photoresist developer, thereby dissolving the contrast enhancement layer with photoresist developer and developing the photoresist, resulting in the complete removal of the contrast enhancement layer and the development of the photoresist.
Claim 2
Dependent Claim 133 words
A photolithographic process for fabricating microelectronic circuits on a substrate comprising: a. applying on the substrate a layer of positive photoresist, said photoresist being developable in an aqueous solution after exposure to predetermined wavelengths; b. applying directly on the photoresist a contrast enhancement layer consisting of a water soluble binder and a water soluble diazonium compound bleachable at the predetermined wavelengths; c. exposing the contrast enhancement layer to an image formed by light at the predetermined wavelengths, thereby bleaching the contrast enhancement layer and exposing the photoresist and rendering the photoresist developable; d. immersing the coated substrate in an aqueous solution of photoresist developer, thereby dissolving the contrast enhancement layer with photoresist developer and developing the photoresist, resulting in the complete removal of the contrast enhancement layer and the development of the photoresist.

References Cited (Backward Citations)

US2114468A Cited
US3484241A Cited
US3965278A Cited
US4217407A Cited
DD156740A1 Cited
EP0110165A2 Cited
US4663275A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-02-14 1992-08-15 1993-02-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-02-14 1996-08-15 1997-02-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-02-14 2000-08-15 2001-02-14 $7700.00 Window Closed / Lapsed

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