US4803947A
Expired / Lapsed
US
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Apparatus for forming deposited film
Assignee: Canon Inc
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Filing: 1987-01-13
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Granted: 1989-02-14
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Expires: 2007-01-13
Abstract
Abstract There is disclosed an apparatus for forming deposited film which forms deposited film on a substrate by introducing a gaseous starting material for formation of deposited film and a gaseous oxidizing agent having the property of oxidation action for said gaseous starting material through separate routes respectively into a film forming space to thereby effect chemical contact therebetween, comprising one or two or more chambers for formation of deposited film and one or two or more etching chambers for etching at least one of said substrate and the deposited film formed on the substrate connected to one another.
Inventors
- 👤 Masao Ueki
- 👤 Masaaki Hirooka
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/545
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
141 words
An apparatus for forming a deposited film on a substrate by a chemical reaction between a gaseous starting material for formation of the deposited film and a gaseous oxidizing agent having the property of oxidation action on said gaseous starting material, comprising: at least one deposition chamber in which said deposited film is formed, said chamber including a gaseous releasing means having a first orifice for introducing said gaseous starting material and a second orifice for introducing said gaseous oxidizing agent, said first and second orifices positioned adjacent one another so as to create a reaction mixture between said gaseous starting material and gaseous oxidizing agent; and at least one etching chamber in which the etching of said substrate or the deposited film formed thereon occurs, said etching chamber including a gas orifice with a narrowed tip to dispense etchant gas.
Claim 2
Independent Claim
141 words
An apparatus for forming a deposited film on a substrate by a chemical reaction between a gaseous starting material for formation of the deposited film and a gaseous oxidizing agent having the property of oxidation action on said gaseous starting material, comprising: at least one deposition chamber in which said deposited film is formed, said chamber including a gaseous releasing means having a first orifice for introducing said gaseous starting material and a second orifice for introducing said gaseous oxidizing agent, said first and second orifices positioned adjacent one another so as to create a reaction mixture between said gaseous starting material and gaseous oxidizing agent; and at least one etching chamber in which the etching of said substrate or the deposited film formed thereon occurs, said etching chamber including a gas orifice with a narrowed tip to dispense etchant gas.
Claim 3
Dependent Claim
41 words
An apparatus for forming deposited film according to claim 1, wherein at least one of the etching chambers has a gas jetting portion provided with a large number of gas jetting orifices for surface coarsening the substrate and/or the deposited film.
Claim 4
Dependent Claim
22 words
An apparatus for forming deposited film according to claim 1, having three chambers for formation of deposited film connected to one another.
Claim 5
Dependent Claim
39 words
An apparatus for forming deposited film according to claim 3, wherein the three chambers for formation of deposited film consist of a p-type semiconductor layer deposition chamber, an i-type semiconductor layer deposition chamber and n-type semiconductor layer deposition chamber.
Claim 6
Dependent Claim
39 words
An apparatus for forming deposited film according to claim 3, wherein the three chambers for formation of deposited film consist of a p-type semiconductor layer deposition chamber, an i-type semiconductor layer deposition chamber and an insulating layer deposition chamber.
Claim 7
Dependent Claim
25 words
An apparatus for forming deposited film according to claim 1, wherein etching in the etching chamber is effected chemically with a gaseous halogenic oxidizing agent.
Claim 8
Independent Claim
161 words
An apparatus for forming a deposited film on a substrate by a chemical reaction between a gaseous starting material for formation of the deposited film and a gaseous oxidizing agent having the property of oxidation action on said gaseous starting material, comprising: at least one deposition chamber in which said deposited film is formed, said chamber including a gas releasing means having a first orifice with a narrowed tip for introducing said gaseous starting material and a second orifice with a narrowed tip for introducing said gaseous oxidizing agent, said first and second orifices positioned adjacent one another so as to create a reaction mixture between said gaseous starting material and said gaseous oxidizing agent; at least one etching chamber in which the etching of said substrate or the deposited film formed thereon occurs; and at least one electroconductive film forming chamber for forming an electroconductive film on the surface of said substrate or the deposited film formed on the substrate.
Claim 9
Independent Claim
161 words
An apparatus for forming a deposited film on a substrate by a chemical reaction between a gaseous starting material for formation of the deposited film and a gaseous oxidizing agent having the property of oxidation action on said gaseous starting material, comprising: at least one deposition chamber in which said deposited film is formed, said chamber including a gas releasing means having a first orifice with a narrowed tip for introducing said gaseous starting material and a second orifice with a narrowed tip for introducing said gaseous oxidizing agent, said first and second orifices positioned adjacent one another so as to create a reaction mixture between said gaseous starting material and said gaseous oxidizing agent; at least one etching chamber in which the etching of said substrate or the deposited film formed thereon occurs; and at least one electroconductive film forming chamber for forming an electroconductive film on the surface of said substrate or the deposited film formed on the substrate.
Claim 10
Dependent Claim
24 words
An apparatus for forming deposited film according to claim 7, having a gas jetting portion provided with a large number of gas jetting orifices.
Claim 11
Dependent Claim
22 words
An apparatus for forming deposited film according to claim 7, having three chambers for formation of deposited film connected to one another.
Claim 12
Dependent Claim
40 words
An apparatus for forming deposited film according to claim 7, wherein the three chambers for formation of deposited film consist of a p-type semiconductor layer deposition chamber, an i-type semiconductor layer deposition chamber and a n-type semiconductor layer deposition chamber.
Claim 13
Dependent Claim
39 words
An apparatus for forming deposited film according to claim 7, wherein the three chambers for formation of deposited film consist of a p-type semiconductor layer deposition chamber, an i-type semiconductor layer deposition chamber and an insulating layer deposition chamber.
Claim 14
Dependent Claim
25 words
An apparatus for forming deposited film according to claim 7, wherein etching in the etching chamber is effected chemically with a gaseous halogenic oxidizing agent.
Claim 15
Dependent Claim
42 words
An apparatus for forming deposited film according to claim 7, wherein at least one of the etching chambers has a gas jetting portion provided with a large number of gas jetting orifices for surface coarsening of the substrate and/or the deposited film.
Claim 16
Dependent Claim
35 words
An apparatus for forming deposited film according to claim 7, wherein at least one of the etching chambers has as gas jetting portion provided with a narrowed gas jetting orifice for severing the deposited film.
Claim 17
Dependent Claim
30 words
An apparatus for forming deposited film according to claim 7, wherein the electroconductive film forming chamber has a gas jetting portion provided with a large number of gas jetting orifices.
Claim 18
Dependent Claim
28 words
An apparatus for forming deposited film according to claim 7, wherein the electroconductive film forming chamber has a gas jetting portion provided with a narrowed gas jetting orifice.
Claim 19
Independent Claim
165 words
An apparatus for forming a deposited film on a substrate by a chemical reaction between a gaseous starting material for formation of the deposited film and a gaseous oxidizing agent having the property of oxidation action on said gaseous starting material, comprising: at least one deposition chamber win which said deposited film is formed, said chamber including a gas introducing means having a first orifice for releasing said gaseous starting material and a second orifice for introducing said gaseous oxidizing agent, said first and second orifices positioned adjacent one another so as to create a reaction mixture between said gaseous starting material and gaseous oxidizing agent; at least one etching chamber in which the etching of said substrate or the deposited film thereon occurs; and at least one electroconductive film forming chamber for forming an electroconductive film on the surface of said substrate or the deposited film formed on the substrate; and said chambers arranged in sequence for the formation of a single structural device.
Claim 20
Independent Claim
165 words
An apparatus for forming a deposited film on a substrate by a chemical reaction between a gaseous starting material for formation of the deposited film and a gaseous oxidizing agent having the property of oxidation action on said gaseous starting material, comprising: at least one deposition chamber win which said deposited film is formed, said chamber including a gas introducing means having a first orifice for releasing said gaseous starting material and a second orifice for introducing said gaseous oxidizing agent, said first and second orifices positioned adjacent one another so as to create a reaction mixture between said gaseous starting material and gaseous oxidizing agent; at least one etching chamber in which the etching of said substrate or the deposited film thereon occurs; and at least one electroconductive film forming chamber for forming an electroconductive film on the surface of said substrate or the deposited film formed on the substrate; and said chambers arranged in sequence for the formation of a single structural device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-14 | 1992-08-15 | 1993-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-14 | 1996-08-15 | 1997-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-14 | 2000-08-15 | 2001-02-14 | $7700.00 | Window Closed / Lapsed |