Abstract A semiconductor memory device including a regular memory cell array in which a plurality of word lines and bit lines are provided, and a plurality of memory cells are arranged at each intersection of the word lines and bit lines; a redundancy memory cell array in which one or more word lines and bit lines are provided, and a plurality of memory cells are arranged at each intersection of the word lines and bit lines; a control unit for generating a first control signal; a unit for programming defective address bits corresponding to a defective memory cell existing in the regular memory cell array; a unit for comparing each logic or input address bits with each of the defective address bits; a first switch for generating a second control signal when at least one logic of the input address bits does not coincide with the corresponding defective address bit and for supplying a third control signal to a predetermined word line or bit line belonging to the redundancy memory cell array without generating the second control signal when each logic of the input address bits coincides with each of the defective address bits; a unit for identifying whether or not the defective address bits are programmed in the programming means; and a second switch for supplying the second control signal input from the first switch to a selected word line or bit line belonging to the regular memory cell array when the identifying unit indicates that the defective address bits are programmed in the programming means and for supplying the first control signal input from the control unit to the selected word line or bit line when the identifying unit indicates that the defective address bits are not programmed in the programming unit.
A semiconductor memory device comprising: a regular memory cell array in which a plurality of word lines and bit lines are provided, and a plurality of memory cells are arranged at each intersection of said word lines and bit lines; a redundancy memory cell array in which one or more word lines and bit lines are provided,. and a plurality of memory cells are arranged at each intersection of said word lines and bit lines in said redundancy memory cell; control means for generating a first control signal; means for programming defective address bits corresponding to a defective memory cell existing in said regular memory cell array; means for comparing each logic state of input address bits with each of said defective address bits; a first switching means for generating a second control signal when at least one logic state of said input address bits does not coincide with a corresponding one of said defective address bits and for supplying a third control signal to a predetermined word line or bit line belonging to said redundancy memory cell array without generating said second control signal when each logic state said input address bits coincides with each of said defective address bits;, means for identifying whether or not said defective address bits are programmed in said programming means; and a second switching means for supplying said second control signal input from said first switching means to a selected word line or bit line belonging to said regular memory cell array when said identifying means indicates that said defective address bits are programmed in said programming means and for supplying said first control signal input from said control means to said selected word line or bit line when said identifying means indicates that said defective address bits are not programmed in said programming means.
Claim 2
Dependent Claim
302 words
A semiconductor memory device comprising: a regular memory cell array in which a plurality of word lines and bit lines are provided, and a plurality of memory cells are arranged at each intersection of said word lines and bit lines; a redundancy memory cell array in which one or more word lines and bit lines are provided,. and a plurality of memory cells are arranged at each intersection of said word lines and bit lines in said redundancy memory cell; control means for generating a first control signal; means for programming defective address bits corresponding to a defective memory cell existing in said regular memory cell array; means for comparing each logic state of input address bits with each of said defective address bits; a first switching means for generating a second control signal when at least one logic state of said input address bits does not coincide with a corresponding one of said defective address bits and for supplying a third control signal to a predetermined word line or bit line belonging to said redundancy memory cell array without generating said second control signal when each logic state said input address bits coincides with each of said defective address bits;, means for identifying whether or not said defective address bits are programmed in said programming means; and a second switching means for supplying said second control signal input from said first switching means to a selected word line or bit line belonging to said regular memory cell array when said identifying means indicates that said defective address bits are programmed in said programming means and for supplying said first control signal input from said control means to said selected word line or bit line when said identifying means indicates that said defective address bits are not programmed in said programming means.
Claim 3
Dependent Claim
55 words
A semiconductor memory device according to claim 1, wherein an signal path for supplying said first control signal or said second control signal to said selected word line or bit line through said second switching means is completed in accordance with an output signal from said identifying means before the operation of said memory device.