Abstract A monolithic two dimensional waveguide coupled cavity laser/modulator structure for high speed modulation comprising a plurality of semiconductor layers on a semiconductor substrate. One of the semiconductor layers functions as an active region. Impurity induced disordering techniques are utilized to form first and second active mediums in the structure having co-axial two dimensional optical cavities. One of these active mediums functions as a laser and the other as a modulator. A passive two dimensional waveguide is integrally formed between the two active mediums having a highest refractive index at its core with diminishing refractive index omnidirectionally from its core with waveguide core having a energy bandgap level higher than both of the active mediums exhibiting low optical absorption at the gain wavelength of either of the active mediums. The modulator can be operated between an electro-absorption mode and a gain modulation mode while the laser is current pumped above threshold with the modulated optical switching of the output of said laser being less than 100 picoseconds as a function of applied voltage to said modulator varied in a range of 0 to 2 volts as illustrated by the curves in FIG. 14.
A monolithic two dimensional waveguide coupled cavity laser/modulator structure comprising a plurality of semiconductor layers on a semiconductor substrate, one of said semiconductor layers having a narrower bandgap than at least immediately adjacent layers, a first active medium formed in a first region of said structure including a portion of said narrower bandgap layer and having a two dimensional optical cavity, a second active medium formed in a second region of said structure including a portion of said narrower bandgap layer and having a two dimensional optical cavity in coaxial alignment with the two dimensional optical cavity of said first active medium, one of said active mediums functioning as a laser and the other of said active mediums functioning as a modulator, a passive two dimensional waveguide integrally formed between and to said active mediums and having the highest refractive index at its core with diminishing refractive index omnidirectionally from its core, said two dimensional waveguide core having a energy bandgap level higher than both of said active mediums with low optical absorption at the gain wavelength of either of said active mediums.
Claim 2
Dependent Claim
183 words
A monolithic two dimensional waveguide coupled cavity laser/modulator structure comprising a plurality of semiconductor layers on a semiconductor substrate, one of said semiconductor layers having a narrower bandgap than at least immediately adjacent layers, a first active medium formed in a first region of said structure including a portion of said narrower bandgap layer and having a two dimensional optical cavity, a second active medium formed in a second region of said structure including a portion of said narrower bandgap layer and having a two dimensional optical cavity in coaxial alignment with the two dimensional optical cavity of said first active medium, one of said active mediums functioning as a laser and the other of said active mediums functioning as a modulator, a passive two dimensional waveguide integrally formed between and to said active mediums and having the highest refractive index at its core with diminishing refractive index omnidirectionally from its core, said two dimensional waveguide core having a energy bandgap level higher than both of said active mediums with low optical absorption at the gain wavelength of either of said active mediums.
Claim 3
Dependent Claim
78 words
The monolithic two dimensional waveguide coupled cavity laser/modulator structure of claim 1 wherein said active mediums are functionally operative in accordance with the optical output power versus current characteristics for said laser as a function of modulator voltage or modulator current wherein said structure operates in a gain modulation mode when the current applied to said modulator is above zero mA and operates in an electro-absorption mode when the voltage applied to said modulator is above zero volts.
Claim 4
Dependent Claim
74 words
The monolithic two dimensional waveguide coupled cavity laser/modulator structure of claim 1 which includes means to operate said modulator between an electro-absorption mode and a gain modulation mode through which said laser is current pumped above threshold, the modulated optical switching of the output of said laser in said electro-absorption mode being less than 100 picoseconds as a function of applied voltage to said modulator varied in a range of 0 to 2 volts.
Claim 5
Dependent Claim
30 words
The monolithic two dimensional waveguide coupled cavity laser/modulator structure of claim 1 wherein said active mediums and said integrally coupled passive two dimensional waveguide are formed by impurity induced disordering.