US4802135A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory having multiple continuous access functions
Assignee: Hitachi Ltd
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Filing: 1986-09-02
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Granted: 1989-01-31
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Expires: 2006-09-02
Abstract
Abstract A pseudo static RAM is provided which uses a one MOSFET dynamic RAM cell, in which two functions of a page mode and a static column mode are realized by using an address buffer having a function to transmit address signals fed from external terminals as they are and a latch function to latch the address signals fed from the external terminals in synchronism with predetermined control signals fed from the external terminals. The address buffer also has a multiplexer function to selectively incorporate the address signals from the external terminals and the address signals produced in the inside of the RAM so that the address buffer and an internal address signal generating circuit may be controlled by external control terminals to make possible the continuous access by the internal address signals.
Inventors
- 👤 Takashi Shinoda
- 👤 Masamichi Ishihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 02:01
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/22; G11C7/10; G11C7/1015; G11C7/1018; G11C7/1021; G11C7/1027; G11C7/1045; G11C7/1048; G11C8/00; G11C8/18
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
231 words
A semiconductor memory comrpising: a memory array which includes word lines, data lines intersecting said word lines, and memory cells arranged corresponding to intersecting points of said word lines and said data lines; a first selection means for selecting one of said word lines; first external address terminals for receiving first external address signals; a first means for forming first internal address signals; a first external control terminal for receiving a first external control signal; internal control signals generating means coupled to said first external control terminal, and for generating internal control signals in accordance with said first external control signal; a second selection means coupled to said first external address terminals, to said first means and to a third selection means, and for selecting and providing one of the first external address signals and the first internal address signals as output signals to said third selection means in accordance with a first internal control signal 1110 of said internal control signals, wherein said third selection means includes means for selecting one of said data lines in accordance with the output signals provided from said second selection means; and an output means for outputting to an external data terminal information stored in a memory cell arranged corresponding to an intersecting point of the word line selected by said first selection means and the data line selected by said third selection means.
Claim 2
Dependent Claim
231 words
A semiconductor memory comrpising: a memory array which includes word lines, data lines intersecting said word lines, and memory cells arranged corresponding to intersecting points of said word lines and said data lines; a first selection means for selecting one of said word lines; first external address terminals for receiving first external address signals; a first means for forming first internal address signals; a first external control terminal for receiving a first external control signal; internal control signals generating means coupled to said first external control terminal, and for generating internal control signals in accordance with said first external control signal; a second selection means coupled to said first external address terminals, to said first means and to a third selection means, and for selecting and providing one of the first external address signals and the first internal address signals as output signals to said third selection means in accordance with a first internal control signal 1110 of said internal control signals, wherein said third selection means includes means for selecting one of said data lines in accordance with the output signals provided from said second selection means; and an output means for outputting to an external data terminal information stored in a memory cell arranged corresponding to an intersecting point of the word line selected by said first selection means and the data line selected by said third selection means.
Claim 3
Dependent Claim
42 words
A semiconductor memory according to claim 1, further comprsing a second means coupled between said third selection means and said second selection means, for forming complementary column address signals, and for providing said complementary column address signals to said third selection means.
Claim 4
Dependent Claim
40 words
A semiconductor memory according to claim 2, wherein said second means includes a first latching means for latching the output signals provided from said second selection means in accordance with a second internal control signal of said internal control signals.
Claim 5
Dependent Claim
56 words
A semiconductor memory according to claim 3, wherein said first means is an address counter for serially forming said first internal address signals by a counting operation in synchronization with said second internal control signal, and said second means includes a third means for providing address signals to become an initial value of said address counter.
Claim 6
Dependent Claim
33 words
A semiconductor memory according to claim 4, wherein said internal control signals generating means includes a second latching means for latching said first external control signal in synchronization with a chip selection signal.
Claim 7
Dependent Claim
31 words
A semiconductor memory according to claim 5, further comprising a fourth means for providing the first external address signals to said second selection means in accordance with said chip selection signal.
Claim 8
Dependent Claim
114 words
A semiconductor memory according to claim 6, wherein said first selection means includes: a fifth means for forming second internal address signals; a fourth selection means coupled to said fifth means, to second external address terminals, and to a fifth selection means, and for selecting and providing one of second external address signals provided from said external second address terminals and the second internal address signals as output signals to said fifth selection means in accordance with a second control signal provided from a second external control terminal, wherein said fifth selection means includes means for selecting one of said word lines in accordance with the output signals provided from said fourth selection means.
Claim 9
Dependent Claim
46 words
A semiconductor memory according to claim 7, wherein said first selection means includes a sixth means coupled between said fourth selection means and said fifth selection means, for forming complementary row address signals, and for providing said complementary row address signals to said fifth selection means.
Claim 10
Dependent Claim
22 words
A semiconductor memory according to claim 8, wherein each of said memory cells includes a MOSFET and a capacitor connected in series.
Claim 11
Dependent Claim
33 words
A semiconductor memory according to claim 9, wherein said fifth means is a refresh circuit for generating the second internal address signals for indicating an address of predetermined memory cells to be refreshed.
References Cited (Backward Citations)
US4476548A
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US4562555A
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US4677592A
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US4685089A
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US4683555A
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US4706219A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-31 | 1992-08-01 | 1993-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-31 | 1996-08-01 | 1997-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-31 | 2000-08-01 | 2001-01-31 | $7700.00 | Window Closed / Lapsed |