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US4801822A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor switching circuit

Assignee: Panasonic Electric Works Co Ltd
•
Filing: 1987-07-28
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Granted: 1989-01-31
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Expires: 2007-07-28
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Abstract

Abstract A semiconductor switching circuit comprises an output FET receiving a photovoltaic output generated by a diode array responsive to a light signal from a light emitting element, a depression mode driving FET connected at the drain and source to the gate and source of the output FET, and a constant voltage conduction element connected in parallel with a resistor connected across the gate and source of the driving FET. The sensitivity of the circuit is elevated by setting the value of this resistor relatively high, whereas high speed operation can be assured by having discharge current of an accumulated charge across the drain and gate of the output FET bypassed through the resistor.

Inventors

  • 👤 Yukio Idaka
  • 👤 Shuichiroh Yamaguchi
  • 👤 Takeshi Matsumoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 15:11
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/78; H03K17/785; H03K17/04; H03K17/041; H03K17/0412; H03K17/04123

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 223 words
A semiconductor switching circuit comprising a diode array optically coupled to a light emitting element which generates a light signal in the presence of an input current for generating a photovoltaic output responsive to said light signal, a resistor connected in series with said photovoltaic diode array, an output FET having a gate, a source and a drain, said output FET being connected to said photovoltaic diode array to be turned from a first impedance state to a second impedance state upon application of said photovoltaic output to the gate and source, a depletion-mode driving FET having a gate, a source and a drain, said driving FET being connected at the drain and source to the gate and source of said output FET and at the gate and source to both ends of said resistor and capable of being biased into an OFF state by a voltage across the resistor upon generation of said photovoltaic output at the photovoltaic diode array, and a constant-voltage conduction element connected in parallel with said resistor to be conductive upon application of a voltage higher than a threshold voltage of said depletion mode driving FET and contributive, with a conduction current upon said conduction, to a charge between the gate and the source and to a discharge between the drain and the gate of the output FET.
Claim 2
Dependent Claim 223 words
A semiconductor switching circuit comprising a diode array optically coupled to a light emitting element which generates a light signal in the presence of an input current for generating a photovoltaic output responsive to said light signal, a resistor connected in series with said photovoltaic diode array, an output FET having a gate, a source and a drain, said output FET being connected to said photovoltaic diode array to be turned from a first impedance state to a second impedance state upon application of said photovoltaic output to the gate and source, a depletion-mode driving FET having a gate, a source and a drain, said driving FET being connected at the drain and source to the gate and source of said output FET and at the gate and source to both ends of said resistor and capable of being biased into an OFF state by a voltage across the resistor upon generation of said photovoltaic output at the photovoltaic diode array, and a constant-voltage conduction element connected in parallel with said resistor to be conductive upon application of a voltage higher than a threshold voltage of said depletion mode driving FET and contributive, with a conduction current upon said conduction, to a charge between the gate and the source and to a discharge between the drain and the gate of the output FET.
Claim 3
Dependent Claim 30 words
A semiconductor switching circuit according to claim 1, wherein said constant-voltage conduction element is a Zener diode having a breakdown voltage higher than said threshold voltage of said driving FET.
Claim 4
Dependent Claim 36 words
A semiconductor switching circuit according to claim 1, wherein said constant-voltage conduction element is an enhancement mode FET having a threshold voltage higher than that of said driving FET and short-circuited across the gate and drain.
Claim 5
Dependent Claim 15 words
A semiconductor switching circuit according to claim 1, wherein said output FET is a MOSFET.

References Cited (Backward Citations)

US3299297A Cited
US4227098A Cited
US4303831A Cited
US4390790A Cited
US4419586A Cited
US4492883A Cited
US4665316A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-01-31 1992-08-01 1993-01-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-01-31 1996-08-01 1997-01-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-01-31 2000-08-01 2001-01-31 $7700.00 Window Closed / Lapsed

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