Abstract A method of connecting a metal conductor to a ceramic substrate including the steps of providing a terminal portion on the ceramic substrate, the ceramic substrate having a dielectric constant less than or equal to 7.0 units and a coefficient of thermal expansion of 5×10 -6 /° C. or less, forming at least one of a buffer layer and a barrier layer overlying the terminal portion of the ceramic substrate, wherein the buffer layer consists essentially of Cu and the barrier layer consists essentially of a material selected from the group consisting of Ni, Pd, and Pt, and brazing a metal conductor to the terminal portion of the ceramic substrate through the at least one of the buffer layer and the barrier layer with an Ag-based brazing filler material.
A method of connecting a metal conductor to a ceramic substrate in an IC package used in high frequency bands on the order of several GHz, said method comprising the steps of: providing a terminal portion on the ceramic substrate, the ceramic substrate having a dielectric constant of less than or equal to 7.0 and a coefficient of thermal expansion of 5×10 -6 /°C. or less; forming a barrier layer on the terminal portion of the ceramic substrate, the barrier layer consisting essentially of a material selected from the group consisting of Ni, Pd, and Pt; and brazing a metal conductor to the terminal portion of the ceramic substrate through the barrier layer with a brazing filler material consisting essentially of pure Ag.
Claim 2
Independent Claim
123 words
A method of connecting a metal conductor to a ceramic substrate in an IC package used in high frequency bands on the order of several GHz, said method comprising the steps of: providing a terminal portion on the ceramic substrate, the ceramic substrate having a dielectric constant of less than or equal to 7.0 and a coefficient of thermal expansion of 5×10 -6 /°C. or less; forming a barrier layer on the terminal portion of the ceramic substrate, the barrier layer consisting essentially of a material selected from the group consisting of Ni, Pd, and Pt; and brazing a metal conductor to the terminal portion of the ceramic substrate through the barrier layer with a brazing filler material consisting essentially of pure Ag.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein said barrier layer is about 10 μm thick.
Claim 4
Dependent Claim
19 words
The method of claim 2, wherein said brazing step takes place at a brazing temperature of approximately 1000° C.