Patent US4798660A successfully refreshed from Google Patents.
US4798660A
Expired / Lapsed
US
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Method for forming Cu In Se2 films
Assignee: Siemens Solar Industries LP
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Filing: 1986-12-22
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Granted: 1989-01-17
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Expires: 2006-12-22
Abstract
Abstract A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.
Inventors
- 👤 James H. Ermer
- 👤 Robert B. Love
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:09
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/568; C23C14/06; C23C14/0623; C23C14/14; C23C14/58; C23C14/5806; C23C14/5846; C23C14/5866; H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3436; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
98 words
A method for fabricating a copper indium diselenide semiconductor film comprising: in a single vacuum chamber sequentially depositing a film of copper on a substrate by DC magnetron sputtering from a first cathode and depositing indium on said film of copper by DC magnetron sputtering from a second cathode to form a composite film of copper and indium; and heating said composite film of copper and indium in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a copper indium diselenide film.
Claim 2
Independent Claim
98 words
A method for fabricating a copper indium diselenide semiconductor film comprising: in a single vacuum chamber sequentially depositing a film of copper on a substrate by DC magnetron sputtering from a first cathode and depositing indium on said film of copper by DC magnetron sputtering from a second cathode to form a composite film of copper and indium; and heating said composite film of copper and indium in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a copper indium diselenide film.
Claim 3
Dependent Claim
29 words
A method according to claim 1 wherein said copper and indium are deposited in said single vacuum chamber by continuously moving said substrate past said first and second cathodes.
Claim 4
Dependent Claim
38 words
A method according to claim 1 wherein said substrate includes a metallic current collecting film and said film is deposited on said substrate before deposition of said film of copper by DC magnetron sputtering from a third cathode.
Claim 5
Dependent Claim
39 words
A method according to claim 3 wherein said current collecting film, said film of copper and said indium are deposited sequentially in said single vacuum chamber by continuously moving said substrate past said third, first and second sputtering cathodes.
Claim 6
Dependent Claim
65 words
A method according to claim 1 wherein said substrate includes a metallic current collecting film and said film is deposited on said substrate before deposition of said film of copper by: depositing a layer of chromium on said substrate by DC magnetron sputtering from a third cathode; and depositing a layer of molybdenum on said chromium layer by DC magnetron sputtering from a fourth cathode.
Claim 7
Dependent Claim
18 words
A method according to claim 1 wherein said substrate is neither heated nor cooled during said depositing steps.
Claim 8
Dependent Claim
55 words
A method according to claim 1 wherein; said film of copper is deposited to a thickness of from about 200 to about 2000 angstroms, and indium is deposited to a thickness of from about 400 to about 4000 angstroms, said thicknesses being selected to provide an atomic ratio of copper to indium of about one.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-17 | 1992-07-18 | 1993-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-17 | 1996-07-18 | 1997-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-17 | 2000-07-18 | 2001-01-17 | $7700.00 | Window Closed / Lapsed |