Writable logic array

Claim 2

A writable logic array, comprising: a first matrix of logic gates connected to a plurality of input lines and a plurality of program lines as its outputs; a second matrix of logic gates receiving as inputs said program lines, said second matrix connected to a plurality of output lines; and switches associated with said program lines for selectively enabling the communication of data from said first matrix to said second matrix; and a random access memory coupled to said switches and programmable to select whether said switches will enable communication on respective program lines, such that output functions of said logic array may be altered according to which program lines are enabled.

Claim 3

The writable logic array of claim 1, wherein all gates in said first matrix perform the same basic logic function, all gates in said second matrix performing a second logic function different from said first basic logic function.

Claim 4

The writable logic array of claim 2, wherein said first and second matrices comprise product and summing gates, respectively.

Claim 5

The writable logic array of claim 1, wherein said switches each comprise a field effect transistor.

Claim 6

The writable logic array of claim 4, wherein said transistor has a current path and a control electrode, the current path connecting a respective one of said first output lines to ground, said control electrode coupled to a cell of said random access memory.

Claim 7

The writable logic array of claim 1, wherein said first matrix, said second matrix, said input and output lines and each said switch are incorporated into a single semiconductor chip.

Claim 8

The writable logic array of claim 6, wherein each said switches each comprise a metal-insulator-semiconductor transistor.

Claim 9

The writable logic array of claim 7, wherein said switches each comprise a complementary metal-insulator-semiconductor transistor.

Claim 10

A writable logic array, comprising: a first matrix of gates that each perform a first basic operation, said gates programmed to perform a set of first logic functions, said first matrix having a plurality of program lines carrying outputs of said first logic functions; a second matrix of gates that each perform a second basic operation different from said first basic operation, said program lines connected to inputs of said second matrix; a plurality of switching transistors each having a current path and a control electrode, the current path of each switching transistor connecting a respective program line to ground, the control electrode of each switching transistor coupled to a respective output of a random access memory; said random access memory writable to energize certain of said switching transistors to decouple respective first output lines from said second array.

Claim 11

A writable logic array, comprising: a first matrix of gates that each perform a first basic operation, said gates programmed to perform a set of first logic functions, said first matrix having a plurality of program lines carrying outputs of said first logic functions; a second matrix of gates that each perform a second basic operation different from said first basic operation, said program lines connected to inputs of said second matrix; a plurality of switching transistors each having a current path and a control electrode, the current path of each switching transistor connecting a respective program line to ground, the control electrode of each switching transistor coupled to a respective output of a random access memory; said random access memory writable to energize certain of said switching transistors to decouple respective first output lines from said second array.

Claim 12

The writable logic array of claim 9, wherein said first matrix is permanently programmed to perform a plurality of summing functions.

Claim 13

The writable logic array of claim 9, wherein said first matrix is permanently programmed to perform a plurality of product functions.

Claim 14

The writable logic array of claim 9, wherein said random access memory is a static random access memory.

Claim 15

The writable logic array of claim 9, wherein said random access memory is a dynamic random access memory.

Claim 18

The method of claim 14, further including the step of: writing the set of programming instructions during a boot-up phase of operation of the array.

Claim 19

The method of claim 14, further including the steps of: operating the logic array as programmed by the set of programming instructions; writing a further set of programming instructions into the volatile memory; operating the logic array as reprogrammed with the further set of programming instructions; and indefinitely repeating the last two steps using still further sets of instructions.

Claim 20

The method of claim 14, and further including the steps of: programming the first matrix to perform a plurality of product functions, the output of each product function appearing on a respective program line; programming the second matrix to perform a plurality of summing functions using as inputs, the program lines; and writing the set of programming instructions to energize selected ones of the switches; and disabling respective program lines associated with the selected ones, of the program lines, such that data cannot be transmitted from the first to the second matrix along the respective program lines.

Claim 21

The method of claim 14, further including the steps of: programming the first matrix to perform a plurality of summing functions, the result of each summing function appearing on a respective program line; programming the second matrix to perform a plurality of product functions, each product function using as its inputs a number of the program lines; and writing the set of programming instructions to energize selected ones of the switches; and disabling respective program lines associated with the selected ones of the program lines, such that data cannot be transmitted from the first to the second matrix along the respective program lines.