Patent US4794019A successfully refreshed from Google Patents.
US4794019A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Refractory metal deposition process
Assignee: Applied Materials Inc
•
Filing: 1987-10-22
•
Granted: 1988-12-27
•
Expires: 2007-10-22
Abstract
Abstract Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240°-400° C.) and pressure (0.1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.
Inventors
- 👤 Nicholas E. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; C; C23; C23C; C23C16/00; C23C16/04; C23C16/06; C23C16/08; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
90 words
In a process for selectively forming a refractory metal coating on a pattern metal in the presence of another material as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing a fluoride of the refractory metal and a reducing agent at a temperature on the order of 220°-400° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of the refractory metal on the pattern metal but not on the other material.
Claim 2
Dependent Claim
90 words
In a process for selectively forming a refractory metal coating on a pattern metal in the presence of another material as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing a fluoride of the refractory metal and a reducing agent at a temperature on the order of 220°-400° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of the refractory metal on the pattern metal but not on the other material.
Claim 3
Dependent Claim
22 words
The process of claim 1 wherein the gas comprises one part of the refractory metal fluoride and at least one part hydrogen.
Claim 4
Dependent Claim
19 words
The process of claim 2 wherein the temperature is maintained at a level on the order of 270°-330° C.
Claim 5
Dependent Claim
19 words
The process of claim 1 wherein the pressure is maintained at a level on the order of 0.5 torr.
Claim 6
Dependent Claim
11 words
The process of claim 1 wherein the pattern metal is aluminum.
Claim 7
Dependent Claim
13 words
The process of claim 1 wherein the pattern metal is a refractory metal.
Claim 8
Dependent Claim
12 words
The process of claim 1 wherein the refractory metal coating is tungsten.
Claim 9
Dependent Claim
92 words
In a process for selectively forming a tungsten metal coating on a pattern metal in the presence of another material such as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing at least one part WF 6 and at least one part H 2 at a temperature on the order of 270°-330° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of tungsten on the pattern metal but not on the other material.
Claim 10
Dependent Claim
92 words
In a process for selectively forming a tungsten metal coating on a pattern metal in the presence of another material such as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing at least one part WF 6 and at least one part H 2 at a temperature on the order of 270°-330° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of tungsten on the pattern metal but not on the other material.
References Cited (Backward Citations)
US3373018A
Cited
US3519479A
Cited
GB1330720A
Cited
DE2718518A1
Cited
US4517225A
Cited
JPH114350A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-27 | 1992-06-27 | 1992-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-27 | 1996-06-27 | 1996-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-27 | 2000-06-27 | 2000-12-27 | $7700.00 | Window Closed / Lapsed |