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US4794019A
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Refractory metal deposition process
Assignee: Applied Materials Inc
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Filing: 1987-10-22
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Granted: 1988-12-27
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Expires: 2007-10-22
Abstract
Abstract Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240°-400° C.) and pressure (0.1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.
Inventors
- 👤 Nicholas E. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; C; C23; C23C; C23C16/00; C23C16/04; C23C16/06; C23C16/08; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
90 words
In a process for selectively forming a refractory metal coating on a pattern metal in the presence of another material as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing a fluoride of the refractory metal and a reducing agent at a temperature on the order of 220°-400° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of the refractory metal on the pattern metal but not on the other material.
Claim 2
Dependent Claim
90 words
In a process for selectively forming a refractory metal coating on a pattern metal in the presence of another material as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing a fluoride of the refractory metal and a reducing agent at a temperature on the order of 220°-400° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of the refractory metal on the pattern metal but not on the other material.
Claim 3
Dependent Claim
22 words
The process of claim 1 wherein the gas comprises one part of the refractory metal fluoride and at least one part hydrogen.
Claim 4
Dependent Claim
19 words
The process of claim 2 wherein the temperature is maintained at a level on the order of 270°-330° C.
Claim 5
Dependent Claim
19 words
The process of claim 1 wherein the pressure is maintained at a level on the order of 0.5 torr.
Claim 6
Dependent Claim
11 words
The process of claim 1 wherein the pattern metal is aluminum.
Claim 7
Dependent Claim
13 words
The process of claim 1 wherein the pattern metal is a refractory metal.
Claim 8
Dependent Claim
12 words
The process of claim 1 wherein the refractory metal coating is tungsten.
Claim 9
Dependent Claim
92 words
In a process for selectively forming a tungsten metal coating on a pattern metal in the presence of another material such as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing at least one part WF 6 and at least one part H 2 at a temperature on the order of 270°-330° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of tungsten on the pattern metal but not on the other material.
Claim 10
Dependent Claim
92 words
In a process for selectively forming a tungsten metal coating on a pattern metal in the presence of another material such as an oxide, nitride or oxynitride on a semiconductor substrate, exposing both the pattern metal and the other material to a gas containing at least one part WF 6 and at least one part H 2 at a temperature on the order of 270°-330° C. and a pressure on the order of 0.1-1.0 torr to deposit an adherent coating of tungsten on the pattern metal but not on the other material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-27 | 1992-06-27 | 1992-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-27 | 1996-06-27 | 1996-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-27 | 2000-06-27 | 2000-12-27 | $7700.00 | Window Closed / Lapsed |