US4792839A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor power circuit breaker structure obviating secondary breakdown
Assignee: Siemens AG
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Filing: 1987-12-21
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Granted: 1988-12-20
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Expires: 2007-12-21
Abstract
Abstract A semiconductor power circuit breaker has several emitter zones of a width (b) less than 30 microns. The semiconductor device may be in the form of a switching transistor or a gate turn off (GTO) thyristor. The spacing (a) of the emitter zones is less than the thickness (d) of the low doped inner zone. The power circuit breaker can thus be operated up to the collector-base break-down voltage U CBO without a destruction through "second break-down" occurring. On the other hand, high current carrying capacity is maintained, since it depends practically only on the chip surface instead of being a function of emitter area.
Inventors
- 👤 Helmut Strack
- 👤 Helmut Herberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:54
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D62/135; H10D18/00; H10D18/60; H10D62/141; H10D62/148
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
192 words
A switching transistor having a semiconductor body including a first surface and a second surface comprising: (a) a first zone of a first conductivity type having a predetermined doping concentration level and a thickness between the first surface and the second surface; (b) a second zone of a second conductivity type abutting the first zone and the first surface of the semiconductor body, the second zone having a higher doping concentration level than the first zone; (c) a plurality of electrically paralleled emitter zones embedded into the second zone at the first surface of the semiconductor body, the emitter zones each being of the first conductivity type and having a higher doping concentration level than the second zone; (d) each of the emitter zones having a width that is less than 30 microns and each proximate pair of emitter zones having a spacing distance between them; (e) the spacing distance being less than the thickness of the first zone; and (f) a fourth zone of the first conductivity type doped to higher concentration level than the first zone, abutting the first zone and located on the second surface of the semiconductor body.
Claim 2
Dependent Claim
192 words
A switching transistor having a semiconductor body including a first surface and a second surface comprising: (a) a first zone of a first conductivity type having a predetermined doping concentration level and a thickness between the first surface and the second surface; (b) a second zone of a second conductivity type abutting the first zone and the first surface of the semiconductor body, the second zone having a higher doping concentration level than the first zone; (c) a plurality of electrically paralleled emitter zones embedded into the second zone at the first surface of the semiconductor body, the emitter zones each being of the first conductivity type and having a higher doping concentration level than the second zone; (d) each of the emitter zones having a width that is less than 30 microns and each proximate pair of emitter zones having a spacing distance between them; (e) the spacing distance being less than the thickness of the first zone; and (f) a fourth zone of the first conductivity type doped to higher concentration level than the first zone, abutting the first zone and located on the second surface of the semiconductor body.
Claim 3
Dependent Claim
184 words
A switching transistor having a semiconductor body including a first surface and a second surface comprising: (a) a first zone of a first conductivity type having a predetermined doping level; (b) a second zone of a second conductivity type abutting the first zone and the first surface of the semiconductor body and having a higher doping concentration level than the first zone; (c) a single coherent emitter zone of the first conductivity type and a doping concentration level higher than that of the second zone abutting the second zone at the first surface of the semiconductor body; (d) a fourth zone of the first conductivity type and a doping concentration level higher than the first zone, abutting the first zone at the second surface of the semiconductor body; (e) the second zone extends to the first surface of the semiconductor body within individual areas separated from each other; (f) the greatest spacing (c) between the areas being less than 30 microns; and (g) the lateral dimensions (f) of the areas of the second zone are less than the thickness (d) of the first zone.
Claim 4
Dependent Claim
184 words
A switching transistor having a semiconductor body including a first surface and a second surface comprising: (a) a first zone of a first conductivity type having a predetermined doping level; (b) a second zone of a second conductivity type abutting the first zone and the first surface of the semiconductor body and having a higher doping concentration level than the first zone; (c) a single coherent emitter zone of the first conductivity type and a doping concentration level higher than that of the second zone abutting the second zone at the first surface of the semiconductor body; (d) a fourth zone of the first conductivity type and a doping concentration level higher than the first zone, abutting the first zone at the second surface of the semiconductor body; (e) the second zone extends to the first surface of the semiconductor body within individual areas separated from each other; (f) the greatest spacing (c) between the areas being less than 30 microns; and (g) the lateral dimensions (f) of the areas of the second zone are less than the thickness (d) of the first zone.
Claim 5
Dependent Claim
17 words
The switching transistor according to claim 1, characterized in that the emitter zones are designed as ringshaped.
Claim 6
Dependent Claim
17 words
The switching transistor according to claim 1, characterized in that the emitter zones are designed as ringshaped.
Claim 7
Dependent Claim
29 words
A switching transistor according to claim 1, characterized in that the emitter zones have lateral dimensions are between 0.1 and 0.7 times the thickness (d) of the first zone.
Claim 8
Dependent Claim
22 words
A switching transistor according to claim 1, characterized in that the spacing distance between emitter areas is between 1 and 10 microns.
Claim 9
Dependent Claim
22 words
A switching transistor according to claim 5, characterized in that the spacing distance between emitter areas is between 1 and 10 microns.
Claim 10
Dependent Claim
39 words
A switching transistor according to claim 1, characterized in that the total area of the emitter zones is at least a predetermined area so that a current density of 10 4 to 10 5 A/cm 2 is not exceeded.
References Cited (Backward Citations)
US3524115A
Cited
US3439239A
Cited
US3513363A
Cited
US3487276A
Cited
US3619738A
Cited
US3794890A
Cited
US3896477A
Cited
US4079406A
Cited
US4581626A
Cited
FR2424631A1
Cited
GB2077491A
Cited
EP0110777A1
Cited
US4626886A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-20 | 1992-06-20 | 1992-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-20 | 1996-06-20 | 1996-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-20 | 2000-06-20 | 2000-12-20 | $7700.00 | Window Closed / Lapsed |