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US4791880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for developing treatment of semiconductor materials
Assignee: Individual
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Filing: 1987-05-19
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Granted: 1988-12-20
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Expires: 2007-05-19
Abstract
Abstract A device for developing treatment of a semiconductor material which is provided with a cup-shaped basin having a liquid inlet passage in its center portion and an annular flat upper portion and a chuck positioned above the basin and having a lower end surface for supporting the semiconductor material to be developed, the basin being provided on its upper portion with a ring for temporarily storing the developing liquid supplied to the upper portion of the basin, the ring having a diameter larger than the size of the semiconductor material and the passage being provided with an automatically operable valve.
Inventors
- 👤 Seiichiro Aigo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:06
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0448
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
128 words
An apparatus for developing semi-conductor materials comprising: a cup-shaped basin having a center portion and an annular flat upper portion, said center portion having a liquid inlet passage, said inlet passage having an upper end; and a chuck positioned above said basin, said chuck having a lower end surface for attracting and supporting, under vacuum, the semi-conductor material to be developed; and a ring provided on said upper portion of said basin to temporarily store developing liquid supplied to said upper portion, said ring having a diameter larger than the size of said semi-conductor material; and a first automatically operable valve provided in said liquid inlet passage located below said upper end of said liquid inlet passage; and discharge means communicating with said basin for discharging developing liquid.
Claim 2
Independent Claim
128 words
An apparatus for developing semi-conductor materials comprising: a cup-shaped basin having a center portion and an annular flat upper portion, said center portion having a liquid inlet passage, said inlet passage having an upper end; and a chuck positioned above said basin, said chuck having a lower end surface for attracting and supporting, under vacuum, the semi-conductor material to be developed; and a ring provided on said upper portion of said basin to temporarily store developing liquid supplied to said upper portion, said ring having a diameter larger than the size of said semi-conductor material; and a first automatically operable valve provided in said liquid inlet passage located below said upper end of said liquid inlet passage; and discharge means communicating with said basin for discharging developing liquid.
Claim 3
Dependent Claim
60 words
An apparatus according to claim 1, wherein said discharge means comprises: a liquid discharging passage, said discharging passage having a first and second end, said first end communicating with said upper end of said basin; and a second automatically operable valve provided in said liquid discharging passage; and an aspirator connected to said second end of said liquid discharging passage.
Claim 4
Dependent Claim
60 words
An apparatus according to claim 1, wherein said discharge means comprises: a liquid discharging passage, said discharging passage having a first and second end, said first end communicating with said liquid inlet passage between said upper end of said inlet passage and said first automatically operable valve; and an aspirator connected to said second end of said liquid discharging passage.
Claim 5
Dependent Claim
30 words
An apparatus according claim 1, wherein the discharge means is an annular groove provided on said upper portion of said basin for receiving said ring and for discharging developing liquid.
Claim 6
Dependent Claim
50 words
An apparatus according to claim 1, wherein the discharge means is provided by a separate member extending upwardly from said upper portion of said basin such that said ring is supported by said separate member and said basin being downwardly displacable so as to allow the discharge of developing fluid.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-20 | 1992-06-20 | 1992-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-20 | 1996-06-20 | 1996-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-20 | 2000-06-20 | 2000-12-20 | $7700.00 | Window Closed / Lapsed |