US4791647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: NEC Corp
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Filing: 1987-06-17
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Granted: 1988-12-13
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Expires: 2007-06-17
Abstract
Abstract An improved semiconductor laser comprises the first and second cladding portions respectively formed on a semi-insulating substrate, an active region sandwiched between the first and second cladding portions, and the first and second electrodes respectively provided on the first and second cladding portions. The first cladding portion includes a semiconductor layer and semi-insulating semiconductor layers provided on the top and back sides of the semiconductor layer so that carries are injected into an active region which is in contact with the side wall of the semiconductor layer, while current leakage is prevented from being produced because the carrier are not injected into other portion than the active region. An improved process of the fabrication of a semiconductor laser comprises forming the first cladding portion to have a vertical side wall from which a side wall of a semiconductor layer is exposed so that an active region is easily formed to be in contact with the side wall of the semiconductor layer.
Inventors
- 👤 Shigeo Sugou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:43
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2203; H01S5/10; H01S5/12; H01S5/1228; H01S5/02; H01S5/0206; H01S5/0208; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
173 words
In a semiconductor laser, including a semi-insulating substrate, first and second cladding portions, first and second electrodes, and an active region, the improvement wherein: said first and second cladding portions are formed on said semi-insulating substrate, said active region is formed between said first and second cladding portions, said first and second electrodes are respectively provided on said first and second cladding portions, said active region has a predetermined value of band gap, said first cladding portion includes a semiconductor layer having a layer value of band gap than said predetermined value and a pair of semi-insulating semiconductor layers respectively formed on top and bottom surfaces of said semiconductor layer and having values of band gaps greater than said larger value, and said active region being disposed in contact with a side surface of said semiconductor layer between said pair of insulating semiconductor layers, and said second cladding portion is of a reverse conductive type to that of said semiconductor layer and has a value of band gap greater than said predetermined value.
Claim 2
Dependent Claim
173 words
In a semiconductor laser, including a semi-insulating substrate, first and second cladding portions, first and second electrodes, and an active region, the improvement wherein: said first and second cladding portions are formed on said semi-insulating substrate, said active region is formed between said first and second cladding portions, said first and second electrodes are respectively provided on said first and second cladding portions, said active region has a predetermined value of band gap, said first cladding portion includes a semiconductor layer having a layer value of band gap than said predetermined value and a pair of semi-insulating semiconductor layers respectively formed on top and bottom surfaces of said semiconductor layer and having values of band gaps greater than said larger value, and said active region being disposed in contact with a side surface of said semiconductor layer between said pair of insulating semiconductor layers, and said second cladding portion is of a reverse conductive type to that of said semiconductor layer and has a value of band gap greater than said predetermined value.
Claim 3
Dependent Claim
40 words
A semiconductor laser according to claim 1, wherein said active region is a portion of an active layer, said active layer being formed between said first and second cladding portions and between said second cladding portion and said semi-insulating substrate.
Claim 4
Dependent Claim
247 words
In a semiconductor laser, including a semi-insulating substrate, first and second cladding portions, first and second electrodes, and an active region, the improvement wherein: said first and second cladding portions are formed on said semi-insulating substrate, said active region is formed between said first and second cladding portions, said first and second electrodes are respectively provided on said first and second cladding portions, said active region has a predetermined value of band gap, said first cladding portion includes a semiconductor layer having a larger value of band than said predetermined value and a pair of semi-insulating semiconductor layers respectively formed on top and bottom surfaces of said semiconductor layer and having values of band gaps greater than said larger value, said second cladding portion is of a reverse conductive type to that of said semiconductor layer and has a value of band gap greater than said predetermined value, and said laser further comprises a light guiding layer, wherein said active region is a portion of an active layer, said active layer and said light guiding layer face and contact each other and are formed between said first and second cladding portions and between said second cladding portion and said semi-insulating substrate, a first portion of said light guiding layer is in contact with said active region and a side wall of said semiconductor layer, and a second portion of said light guiding layer is in contact with said first cladding portion on periodical concave and convex surfaces.
Claim 5
Dependent Claim
247 words
In a semiconductor laser, including a semi-insulating substrate, first and second cladding portions, first and second electrodes, and an active region, the improvement wherein: said first and second cladding portions are formed on said semi-insulating substrate, said active region is formed between said first and second cladding portions, said first and second electrodes are respectively provided on said first and second cladding portions, said active region has a predetermined value of band gap, said first cladding portion includes a semiconductor layer having a larger value of band than said predetermined value and a pair of semi-insulating semiconductor layers respectively formed on top and bottom surfaces of said semiconductor layer and having values of band gaps greater than said larger value, said second cladding portion is of a reverse conductive type to that of said semiconductor layer and has a value of band gap greater than said predetermined value, and said laser further comprises a light guiding layer, wherein said active region is a portion of an active layer, said active layer and said light guiding layer face and contact each other and are formed between said first and second cladding portions and between said second cladding portion and said semi-insulating substrate, a first portion of said light guiding layer is in contact with said active region and a side wall of said semiconductor layer, and a second portion of said light guiding layer is in contact with said first cladding portion on periodical concave and convex surfaces.
References Cited (Backward Citations)
US4166278A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-13 | 1992-06-13 | 1992-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-13 | 1996-06-13 | 1996-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-13 | 2000-06-13 | 2000-12-13 | $7700.00 | Window Closed / Lapsed |