Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
117 words
An apparatus for testing the susceptibility of an integrated circuit to single event upsets caused by high energy heavy ions, comprising: positioning means for mounting the integrated circuit at a selected position; source means for generating a pulse of light having sufficient power to simulate the effect on the integrated circuit that would be caused by impact of high energy heavy ions; optical means for focusing the pulse of light produced by the source means at a target position on the integrated circuit mounted by the positioning means; and, electronic testing means for operating the integrated circuit and monitoring the integrated circuit to determine whether a single event upset has been caused by the pulse of light.
Claim 2
Independent Claim
117 words
An apparatus for testing the susceptibility of an integrated circuit to single event upsets caused by high energy heavy ions, comprising: positioning means for mounting the integrated circuit at a selected position; source means for generating a pulse of light having sufficient power to simulate the effect on the integrated circuit that would be caused by impact of high energy heavy ions; optical means for focusing the pulse of light produced by the source means at a target position on the integrated circuit mounted by the positioning means; and, electronic testing means for operating the integrated circuit and monitoring the integrated circuit to determine whether a single event upset has been caused by the pulse of light.
Claim 3
Dependent Claim
64 words
The apparatus of claim 1, wherein the source means comprise a laser device having a spectral width on the order of 10 nanometers or less, and wherein the optical means is operative to focus the light produced by the source means to a focal spot at the target position, the diameter of the focal spot being on the order of 5 microns or less.
Claim 4
Dependent Claim
38 words
The apparatus of claim 2, wherein the positioning means are operative to position the integrated circuit at the selected position to an accuracy of within 5 micrometers, for testing the susceptibility of particular portions of the integrated circuit.
Claim 5
Dependent Claim
58 words
The apparatus of claim 3, further comprising means for generating a visible light beam for use in determining the target position where the pulse of light will strike the integrated circuit, and wherein the optical means comprise means for selectively focusing either the visible light beam or the light produced by the source means at the target position.
Claim 6
Dependent Claim
48 words
The apparatus of claim 1, wherein the light produced by the source means has a wavelength selected such that energy associated with light of that wavelength will be absorbed at a substantially constant rate along the path of the light through an active layer of the integrated circuit.
Claim 7
Dependent Claim
19 words
The apparatus of claim 5, wherein the wavelength of the pulse of light is in the range 850-1,100 nanometers.
Claim 8
Dependent Claim
30 words
The apparatus of claim 1, wherein the pulse of light has a rise time of less than about 5 nanoseconds, and a pulse width of less than about 10 nanoseconds.
Claim 9
Dependent Claim
33 words
The apparatus of claim 1, wherein the electronic testing means are operative to produce trigger signals, and wherein the source means are operative to produce light pulses in response to such trigger signals.
Claim 10
Independent Claim
96 words
A method for testing the susceptibility of an integrated circuit to single event upsets caused by high energy heavy ions, the method comprising: positioning the integrated circuit at a selected position; generating a pulse of light having sufficient power to simulate the effect on the integrated circuit that would be caused by impact of high energy heavy ions; focusing the pulse of light at a target position on the integrated circuit; and operating the integrated circuit and monitoring the integrated circuit to determine whether a single event upset has been caused by the pulse of light.
Claim 11
Independent Claim
96 words
A method for testing the susceptibility of an integrated circuit to single event upsets caused by high energy heavy ions, the method comprising: positioning the integrated circuit at a selected position; generating a pulse of light having sufficient power to simulate the effect on the integrated circuit that would be caused by impact of high energy heavy ions; focusing the pulse of light at a target position on the integrated circuit; and operating the integrated circuit and monitoring the integrated circuit to determine whether a single event upset has been caused by the pulse of light.
Claim 12
Dependent Claim
35 words
The method of claim 9, wherein the pulse of light is focused to a focal spot at the target position, the diameter of the focal spot being on the order of 5 microns or less.
Claim 13
Dependent Claim
47 words
The method of claim 10, comprising the further steps of focusing a visible light beam at a visible focal spot, determining the separation between the focal spot and the visible focal spot, and utilizing said separation as a guide to focusing the light at the target position.
Claim 14
Dependent Claim
43 words
The method of claim 9, wherein the light has a wavelength selected such that energy associated with light of that wavelength will be absorbed at a substantially constant rate along the path of the light through an active layer of the integrated circuit.
Claim 15
Dependent Claim
20 words
The method of claim 12, wherein the wavelength of the pulse of light is in the range of 850-1100 nanometers.
Claim 16
Dependent Claim
30 words
The method of claim 9, wherein the pulse of light has a rise time of less than about five nanoseconds, and a pulse width of less than about ten nanoseconds.
Claim 17
Dependent Claim
25 words
The method of claim 9, wherein the pulse of light is generated at a prescribed time with respect to the operation of the integrated circuit.