Patent US4786814A successfully refreshed from Google Patents.
US4786814A
Expired / Lapsed
US
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Method of reducing electrostatic charge on ion-implanted devices
Assignee: Intersil Corp
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Filing: 1983-09-16
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Granted: 1988-11-22
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Expires: 2003-09-16
Abstract
Abstract Disclosed herein is a method of using an apparatus for ion implanation providing a flood of electrons to neutralize the charge on an ion-implanted wafer after implantation to prevent electrostatic sticking attraction between the wafer and the support mechanism.
Inventors
- 👤 Frank Kolondra
- 👤 Chung P. Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:33
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H01J37/02; H01J37/026
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
64 words
A method of reducing residual electrostatic charge on an ion-implanted wafer comprising the steps of: (a) implanting said wafer with a predetermined dose of ions in the range of to 10 10 to 10 14 ions/cm 2 ; and (b) subsequent to implanting said wafer flooding said wafer for one to three seconds with sufficient secondary electrons to neutralize positive charges on said wafer.
Claim 2
Independent Claim
64 words
A method of reducing residual electrostatic charge on an ion-implanted wafer comprising the steps of: (a) implanting said wafer with a predetermined dose of ions in the range of to 10 10 to 10 14 ions/cm 2 ; and (b) subsequent to implanting said wafer flooding said wafer for one to three seconds with sufficient secondary electrons to neutralize positive charges on said wafer.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein said ion dose is 10 10 ions per cm 2 and the current for generating said secondary electrons is one milliampere for one second.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein said ion dose is 10 12 ions per cm 2 and the current for generating said secondary electrons is one milliampere for two seconds.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein said ion dose is 10 13 ions per cm 2 and the current for generating said secondary electrons is one milliampere for three seconds.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-22 | 1992-05-23 | 1992-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-22 | 1996-05-23 | 1996-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-22 | 2000-05-23 | 2000-11-22 | $7700.00 | Window Closed / Lapsed |