Patent US4784720A successfully refreshed from Google Patents.
US4784720A
Expired / Lapsed
US
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Trench etch process for a single-wafer RIE dry etch reactor
Assignee: Texas Instruments Inc
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Filing: 1987-07-08
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Granted: 1988-11-15
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Expires: 2007-07-08
Abstract
Abstract A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.
Inventors
- 👤 Monte A. Douglas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:50
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/244; H10P50/69; H10P50/691; H10P50/693; H10P50/694
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
52 words
A process for etching a trench in a substrate, comprising the steps of: etching a trench in a predetermined trench location of said substrate by means of a plasma source of etchants and ions; selectively depositing materials on the sidewalls of said trench to control the profile of the trench being etched.
Claim 2
Dependent Claim
52 words
A process for etching a trench in a substrate, comprising the steps of: etching a trench in a predetermined trench location of said substrate by means of a plasma source of etchants and ions; selectively depositing materials on the sidewalls of said trench to control the profile of the trench being etched.
Claim 3
Dependent Claim
52 words
A process for etching a trench in silicon, comprising-the steps of: etching a trench in a predetermined trench location of said silicon substrate by means of a plasma source of silicon etchants and ions; selectively depositing materials on the sidewalls of said trench to control the profile of the trench being etched.
Claim 4
Dependent Claim
52 words
A process for etching a trench in silicon, comprising-the steps of: etching a trench in a predetermined trench location of said silicon substrate by means of a plasma source of silicon etchants and ions; selectively depositing materials on the sidewalls of said trench to control the profile of the trench being etched.
Claim 5
Dependent Claim
34 words
The process of claim 2, wherein said step of selectively depositing materials comprises: selectively depositing materials from the plasma onto the sidewalls of said trench to control the profile of the trench being etched.
Claim 6
Dependent Claim
32 words
The process of claim 3, further comprising: including in said plasma an etchant which reacts with silicon atoms of said silicon substrate to form etch products which deposit on the trench sidewall.
Claim 7
Dependent Claim
40 words
The process of claim 4, further comprising: including in said plasma at least one species which bonds to a silicon surface of said trench and is not readily displaced by silicon etchants in the plasma to volatilize the silicon surface.
Claim 8
Dependent Claim
40 words
The process of claim 3, further comprising: including in said plasma at least one species which bonds to a silicon surface of said trench and is not readily displaced by silicon etchants in the plasma to volatilize the silicon surface.
Claim 9
Dependent Claim
35 words
The method of claim 4, further comprising: forward sputtering at least a portion of the material selectively deposited on the trench sidewall to a position on the trench sidewall nearer the bottom of the trench.
Claim 10
Dependent Claim
36 words
The method of claim 7, further comprising: including in said plasma at a predetermined time in said etch process an agent which removes at least a portion of said materials selectively deposited on said trench sidewall.
Claim 11
Dependent Claim
31 words
The method of claim 6, wherein said material selectively deposited on said trench sidewall is thicker near the mouth of the trench than it is near the bottom of the trench.
Claim 12
Dependent Claim
28 words
The method of claim 9, wherein the material selectively deposited near the mouth of said trench serves to reduce sidewall ion bombardment by shadowing the lower trench sidewalls.
Claim 13
Dependent Claim
31 words
The method of claim 10, further including: forward sputtering silicon dioxide from an upper region of said silicon substrate to positions on the trench sidewall near the mouth of the trench.
Claim 14
Dependent Claim
29 words
The method of claim 3, further including: modifying during said etch process said material selectively deposited on said trench sidewall to vary the profile of the trench being etched.
Claim 15
Dependent Claim
29 words
The method of claim 5, further including: modifying during said etch process said material selectively deposited on said trench sidewall to vary the profile of the trench being etched.
Claim 16
Dependent Claim
12 words
The method of claim 4, wherein said etchant comprises a halogen source.
Claim 17
Dependent Claim
23 words
The method of claim 14, wherein said etchant comprises at least one of: a bromine source; a chlorine source; and an iodine source.
Claim 18
Dependent Claim
23 words
The method of claim 14, wherein said etchant comprises at least one of: HBr, Br 2 , CF 3 Br, HCl, and HI.
Claim 19
Dependent Claim
28 words
The method of claim 4, wherein said etch products, in conjunction with one of oxygen and nitrogen, form a product which deposits on the sidewall of the trench.
Claim 20
Dependent Claim
28 words
The method of claim 14, wherein said etch products, in conjunction with one of oxygen and nitrogen, form a product which deposits on the sidewall of the trench.
Claim 21
Dependent Claim
28 words
The method of claim 17, wherein said etch products, in conjunction with one of oxygen and nitrogen, form a product which deposits on the sidewall of the trench.
Claim 22
Dependent Claim
24 words
The method of claim 3, further comprising including in said plasma species which combine to form polymeric residues on the sidewall of said trench.
Claim 23
Dependent Claim
13 words
The method of claim 20, wherein said polymeric residues comprise organic polymeric residues.
Claim 24
Dependent Claim
13 words
The method of claim 20, wherein said polymeric residues comprise inorganic polymeric residues.
Claim 25
Dependent Claim
19 words
The method of claim 3, further comprising: including in said plasma gaseous HBr, BCl 3 and N 2 .
Claim 26
Dependent Claim
17 words
The method of claim 3, further comprising: including in said plasma gaseous HBr, BCl 3 and CO.
Claim 27
Dependent Claim
16 words
The method of claim 3, further comprising: including in said plasma gaseous HBr, SiCl 4 and
Claim 28
Dependent Claim
56 words
A process for etching a trench in a silicon substrate, comprising the steps of: etching a trench in a predetermined trench location of said silicon substrate by means of a plasma source of ions; passivating the sidewalls of the trench by deposition of materials on the sidewalls to control the profile of the trench being etched.
Claim 29
Dependent Claim
56 words
A process for etching a trench in a silicon substrate, comprising the steps of: etching a trench in a predetermined trench location of said silicon substrate by means of a plasma source of ions; passivating the sidewalls of the trench by deposition of materials on the sidewalls to control the profile of the trench being etched.
Claim 30
Dependent Claim
33 words
The process of claim 26, wherein said passivation of the trench sidewalls comprises both: passivating the sidewalls on a molecular level, and passivating the sidewalls by a veneer type passivation of the sidewall.
Claim 31
Dependent Claim
14 words
The process of claim 27, further comprising: including in said plasma a precipitating agent.
Claim 32
Dependent Claim
14 words
The process of claim 27, further comprising: including in said plasma a polymerizing agent.
References Cited (Backward Citations)
US4533430A
Cited
US4690729A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-15 | 1992-05-16 | 1992-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-15 | 1996-05-16 | 1996-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-15 | 2000-05-16 | 2000-11-15 | $7700.00 | Window Closed / Lapsed |