Patent US4780334A successfully refreshed from Google Patents.
US4780334A
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Method and composition for depositing silicon dioxide layers
Assignee: General Electric Co
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Filing: 1988-03-14
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Granted: 1988-10-25
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Expires: 2008-03-14
Abstract
Abstract A method and composition for depositing SiO 2 on substrates by chemical vapor deposition are provided wherein aminoxysilane reagents are utilized. These aminoxysilane reagents pyrolyze at about the same temperatures as organometallic reagents, permitting multiple alternating layers of silicon dioxide and metal oxides to be formed at the same operating temperature.
Inventors
- 👤 Frederick Ackerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:57
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
115 words
A chemical vapor deposition method for forming SiO 2 layers on a substrate which comprises contacting organosilicon reagent vapors with the surface of a heated substrate and heating said substrate to a temperature sufficiently high to pyrolyze said organosilicon vapors onto said surface, said organosilicon reagent comprising at least one compound of the formula Si(L).sub.4-x (ONR'.sub.2).sub.x I wherein x is at least 1, L is of a formula selected from the group consisting of --OR" and --ON═R'", R' and R" are monovalent hydrocarbon radicals of less than 30 carbon atoms and R'" is a divalent hydrocarbon radical of less than 30 carbon atoms and, said organosilicon reagent being vaporized at a temperature below 300° C.
Claim 2
Dependent Claim
115 words
A chemical vapor deposition method for forming SiO 2 layers on a substrate which comprises contacting organosilicon reagent vapors with the surface of a heated substrate and heating said substrate to a temperature sufficiently high to pyrolyze said organosilicon vapors onto said surface, said organosilicon reagent comprising at least one compound of the formula Si(L).sub.4-x (ONR'.sub.2).sub.x I wherein x is at least 1, L is of a formula selected from the group consisting of --OR" and --ON═R'", R' and R" are monovalent hydrocarbon radicals of less than 30 carbon atoms and R'" is a divalent hydrocarbon radical of less than 30 carbon atoms and, said organosilicon reagent being vaporized at a temperature below 300° C.
Claim 3
Dependent Claim
17 words
A method as in claim 1 wherein said substrate is heated to a temperature below 475° C.
Claim 4
Dependent Claim
66 words
A method as in claim 1 wherein each R' of formula I is independently alkyl radicals of from 1 to 8 carbon atoms, each R" is independently selected from the group consisting of alkyl and alkene radicals of from 1 to 8 carbon atoms and aryl radicals from 6 to 10 carbon atoms and each R'" is independently alkene of from 1 to 8 carbon atoms.
Claim 5
Dependent Claim
30 words
A method as in claim 1 wherein x is 3 or 4, and each R' of formula I is selected from the group consisting of methyl, ethyl, propyl and isopropyl.
Claim 6
Dependent Claim
44 words
A method as in claim 1 wherein the organosilicon reagent is selected from the group consisting of Si[ON(C 2 H 5 ) 2 ] 4 , Si[ON(CH 3 ) 2 ] 4 and Si(ONCHCH 3 )[ON(C 2 H 5 ) 2 ] 3 .
Claim 7
Dependent Claim
37 words
A method as in claim 1 wherein the organosilicon reagent is vaporized at a temperature in the range of 50° to 150° C. at a pressure in the range of 1 micron to 1000 microns of mercury.
Claim 8
Dependent Claim
84 words
A method as in claim 1 wherein said substrate is selected from the group consisting of silicon, silicon dioxide glass, boron glass, tantalum oxide-coated glass, titanium oxide-coated glass, Si 3 N 4 -coated glass, metal, metal alloy, carbon fibers, carbon composites, α-Si, GaAs, Hg 1-m M m Te, where M is a divalent metal and m is 0 to 1, mixtures of III and Group V elements of the periodic table and mixtures of Group II and Group VI elements of the periodic table.
Claim 9
Dependent Claim
40 words
A method as in claim 1 wherein pyrolysis of said organosilicon reagent takes place at a pressure in the range of 1 micron to 1000 microns of mercury and a temperature in the range of 350° C. to 450° C.
Claim 10
Dependent Claim
24 words
A method as in claim 1 wherein the SiO 2 layer produced has a thickness in te range of 50 Angstroms to 100,000 Angstroms.
Claim 11
Dependent Claim
22 words
A method as in claim 1 wherein pyrolysis of the organosilicon reagent takes place in the presence of an inert carrier gas.
Claim 12
Dependent Claim
32 words
A method as in claim 1 further comprising the additional step of forming a metal oxide layer on said substrate by pyrolyzing a vaporized organometallic reagent on the surface of said substrate.
Claim 13
Dependent Claim
20 words
A method as in claim 11 wherein the metal oxide layer is formed subsequent to deposition of SiO 2 .
Claim 14
Dependent Claim
20 words
A method as in claim 11 wherein the metal oxide layer is formed prior to deposition of SiO 2 .
Claim 15
Dependent Claim
34 words
A method as in claim 11 wherein the organometallic reagent and organosilicon reagent are pyrolyzed at about the same temperature selected from values falling in the range of about 350° C. to 500° C.
Claim 16
Dependent Claim
20 words
A method as in claim 14 wherein more than 2 alternating layers of metal oxide and SiO 2 are formed.
Claim 17
Dependent Claim
33 words
A method as in claim 11 wherein the metal oxide layer is TiO 2 , formed by pyrolysis of an organometallic reagent selected from the group consisting of titanium ethoxide and titanium isopropoxide.
Claim 18
Dependent Claim
34 words
A method as in claim 11 wherein the metal oxide layer is Ta 2 O 5 formed by pyrolysis of an organometallic reagent selected from the group consisting of tantalum pentaethoxide and tantalum pentapropoxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-25 | 1992-04-25 | 1992-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-25 | 1996-04-25 | 1996-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-25 | 2000-04-25 | 2000-10-25 | $7700.00 | Window Closed / Lapsed |