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US4778745A Expired / Lapsed US ⏱️ 0.0 years remaining

Defect detection method of semiconductor wafer patterns

Assignee: Nortel Networks Ltd
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Filing: 1987-03-23
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Granted: 1988-10-18
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Expires: 2007-03-23
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Abstract

Abstract A method of detecting opaque defects on a reticle used to define die patterns during semiconductor device fabrication in which a comparison is made of reflected light levels between an image die containing the developed photo-sensitive resist of a top layer with a reference die which contains only previously formed layers. The comparison is limited to areas of the device where there is no image pattern formed by the resist. A defect is detected whenever there is a difference in the recorded levels detected during the comparison.

Inventors

  • 👤 Pak K. Leung

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 17:49
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/82; G03F1/84; G01; G01N; G01N21/00; G01N21/84; G01N21/88; G01N21/95; G01N21/956; G01N21/95607

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 208 words
A method of detecting essentially opaque defects in an image pattern on a reticle used to define an additional layer on an image die, which is one of a plurality of mutiple reproduced dice in a substrate, the defects resulting from contamination of the image pattern on the reticle, the image die being compared to a reference die which is another of the plurality of multiple reproduced dice in the substrate; the method comprising the steps of: forming the image on the reticle from stored data: applying a photo-sensitive resist to the substrate over at least the image die and the reference die; exposing the photo-sensitive resist on the image die to the reticle image pattern; blanket exposing the resist on the reference die to exclude additional layer; developing the exposed photo-sensitive resist; dividing each of the dice into pixels; and recording the light levels from equally illuminated corresponding pixels of the image die and the reference die; the method characterized by: utilizing the stored design data to exclude from inspection the areas defining the image pattern: comparing the recorded levels from said reference die with those from said image die of the non-excluded areas; and detecting a defect whenever the two levels differ by a predefined amount.
Claim 2
Independent Claim 208 words
A method of detecting essentially opaque defects in an image pattern on a reticle used to define an additional layer on an image die, which is one of a plurality of mutiple reproduced dice in a substrate, the defects resulting from contamination of the image pattern on the reticle, the image die being compared to a reference die which is another of the plurality of multiple reproduced dice in the substrate; the method comprising the steps of: forming the image on the reticle from stored data: applying a photo-sensitive resist to the substrate over at least the image die and the reference die; exposing the photo-sensitive resist on the image die to the reticle image pattern; blanket exposing the resist on the reference die to exclude additional layer; developing the exposed photo-sensitive resist; dividing each of the dice into pixels; and recording the light levels from equally illuminated corresponding pixels of the image die and the reference die; the method characterized by: utilizing the stored design data to exclude from inspection the areas defining the image pattern: comparing the recorded levels from said reference die with those from said image die of the non-excluded areas; and detecting a defect whenever the two levels differ by a predefined amount.
Claim 3
Dependent Claim 36 words
A method of detecting defects as defined in claim 1 in which the step processing the resist on a reference die is a positive resist process and includes fully exposing the resist on the reference die.
Claim 4
Dependent Claim 32 words
A method of detecting defects as defined in claim 2 in which: the image die and the reference die each have at least one layer thereon prior to applying the photo-sensitive resist.

References Cited (Backward Citations)

WO1979000876A1 Cited
US4586822A Cited
US4641353A Cited
US4718767A Cited
US4637714A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-10-18 1992-04-18 1992-10-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-10-18 1996-04-18 1996-10-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-10-18 2000-04-18 2000-10-18 $7700.00 Window Closed / Lapsed

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