Materials and methods for etching tungsten polycides using silicide as a mask

Claim 2

A process for selectively etching a silicon constituent of a body formed of silicon and metal silicide constituents, substantially without etching of the silicide constituent, comprising exposing the body to a plasma formed from a reactant gas flow of SiCl 4 and HCl, the volumetric ratio of SiCl 4 to HCl being approximately ≧2 to 1.

Claim 3

A process for etching a tungsten polycide structure comprising a layer of tungsten silicide on a layer of polycrystalline silicon using a photoresist etch mask, in an RIE plasma etching chamber, comprising: positioning the masked tungsten polycide structure in the etch chamber; communicating into said chamber a selected reactive gas mixture for forming a silicide etching plasma, while applying RF energy to the chamber to form the plasma and to etch the silicide to a pattern defined by said photoresist mask; and communicating into said chamber a reactive gas mixture comprising silicon tetrachloride and hydrogen chloride for forming a polysilicon etching plasma, the flow rate ratio of silicon tetrachloride to hydrogen chloride being approximately ≧2 to 1 for etching the polysilicon to the pattern defined in the silicide without etching the silicide.

Claim 4

A process for etching a tungsten polycide structure comprising a layer of tungsten silicide on a layer of polycrystalline silicon using a photoresist etch mask, in an RIE plasma etching chamber, comprising: positioning the masked tungsten polycide structure in the etch chamber; communicating into said chamber a selected reactive gas mixture for forming a silicide etching plasma, while applying RF energy to the chamber to form the plasma and to etch the silicide to a pattern defined by said photoresist mask; and communicating into said chamber a reactive gas mixture comprising silicon tetrachloride and hydrogen chloride for forming a polysilicon etching plasma, the flow rate ratio of silicon tetrachloride to hydrogen chloride being approximately ≧2 to 1 for etching the polysilicon to the pattern defined in the silicide without etching the silicide.

Claim 5

A process for etching, in a plasma etching chamber, a tungsten polycide structure comprising a layer of tungsten silicide on a layer of polysilicon on a layer of silicon oxide, using a photoresist on the silicide for patterning the silicide mask, and using the resulting patterned silicide as a mask for patterning the poly, comprising: communicating into said chamber, containing the masked tungsten polycide structure, a selected reactive gas mixture for forming a silicide etching plasma and applying RF energy to the chamber to form the plasma and etch the silicide to a pattern defined by said photoresist mask; communicating into said chamber a reactive gas mixture comprising silicon tetrachloride and hydrogen chloride for forming a polysilicon etching plasma, and forming said polysilicon etching plasma using selected RF power, D.C. bias voltage and pressure levels, the flow rate ratio of silicon tetrachloride to hydrogen chloride being approximately ≧2 to 1 for etching the polysilicon to the pattern defined in the silicide without substantially etching the silicide; and upon exposure of the underlying silicon oxide, reducing at least one of total gas flow rates, RF power, D.C. bias voltage and pressure to complete the etching of the polysilicon without substantially etching the tungsten silicide layer and without etching through the oxide.

Claim 6

A process for etching, in a plasma etching chamber, a tungsten polycide structure comprising a layer of tungsten silicide on a layer of polysilicon on a layer of silicon oxide, using a photoresist on the silicide for patterning the silicide mask, and using the resulting patterned silicide as a mask for patterning the poly, comprising: communicating into said chamber, containing the masked tungsten polycide structure, a selected reactive gas mixture for forming a silicide etching plasma and applying RF energy to the chamber to form the plasma and etch the silicide to a pattern defined by said photoresist mask; communicating into said chamber a reactive gas mixture comprising silicon tetrachloride and hydrogen chloride for forming a polysilicon etching plasma, and forming said polysilicon etching plasma using selected RF power, D.C. bias voltage and pressure levels, the flow rate ratio of silicon tetrachloride to hydrogen chloride being approximately ≧2 to 1 for etching the polysilicon to the pattern defined in the silicide without substantially etching the silicide; and upon exposure of the underlying silicon oxide, reducing at least one of total gas flow rates, RF power, D.C. bias voltage and pressure to complete the etching of the polysilicon without substantially etching the tungsten silicide layer and without etching through the oxide.

Claim 7

The process of claim 3, wherein the polysilicon etching completion step is at reduced total gas flow, RF power, D.C. bias voltage and pressure levels.

Claim 8

The process of claim 3, wherein said silicide-etching reactive gas mixture comprises hydrogen chlorine, boron trichloride, chlorine and carbon tetrafluoride.

Claim 9

The process of claim 5, wherein the polysilicon etching completion step is at reduced total gas flow, RF power, D.C. bias voltage and pressure levels.