US4778562A
Expired / Lapsed
US
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Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
Assignee: Motors Liquidation Co
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Filing: 1984-08-13
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Granted: 1988-10-18
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Expires: 2004-08-13
Abstract
Abstract High resolution patterns can be etched in tin oxide films in one step using reactive ion etching when the reactant gas consists substantially of nitrogen and/or argon and from small but effective amounts of hydrogen up to about 10 percent by volume hydrogen.
Inventors
- 👤 Shih-Chia Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:05
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/53; C04B41/5338; C04B41/5346; C04B41/80; C04B41/91; H; H10; H10F; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
46 words
In a method of reactive ion etching, the improvement wherein tin oxide is reactive ion etched using a neutral reactant gas containing minor proportions of hydrogen, whereby tin oxide is removed highly uniformly and without producing a residue that must be removed in a following step.
Claim 2
Dependent Claim
46 words
In a method of reactive ion etching, the improvement wherein tin oxide is reactive ion etched using a neutral reactant gas containing minor proportions of hydrogen, whereby tin oxide is removed highly uniformly and without producing a residue that must be removed in a following step.
Claim 3
Dependent Claim
67 words
In a method of reactive ion etching, the improvement wherein a reactant gas containing from small but effective amounts to about 10 percent by volume hydrogen and the balance substantially at least one member selected from the group consisting of nitrogen and argon is used to etch a film of tin oxide, effective to produce high resolution patterns in the tin oxide film in one etching step.
Claim 4
Dependent Claim
67 words
In a method of reactive ion etching, the improvement wherein a reactant gas containing from small but effective amounts to about 10 percent by volume hydrogen and the balance substantially at least one member selected from the group consisting of nitrogen and argon is used to etch a film of tin oxide, effective to produce high resolution patterns in the tin oxide film in one etching step.
Claim 5
Dependent Claim
52 words
A one-step process for the etching of high resolution patterns in tin oxide films comprising the step of reactively ion etching a tin oxide film with a reactant gas consisting essentially of at least one member selected from the group consisting of nitrogen and argon and about 4-10 percent by volume hydrogen.
Claim 6
Dependent Claim
52 words
A one-step process for the etching of high resolution patterns in tin oxide films comprising the step of reactively ion etching a tin oxide film with a reactant gas consisting essentially of at least one member selected from the group consisting of nitrogen and argon and about 4-10 percent by volume hydrogen.
Claim 7
Dependent Claim
26 words
The process of claim 3 wherein the reactant gas consists essentially nitrogen and the hydrogen content in the reactant gas is about 6-8 percent by volume.
Claim 8
Dependent Claim
27 words
The process of claim 3 wherein the reactant gas consists essentially of argon and the hydrogen content in the reactant gas is about 6-8 percent by volume.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-18 | 1992-04-18 | 1992-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-18 | 1996-04-18 | 1996-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-18 | 2000-04-18 | 2000-10-18 | $7700.00 | Window Closed / Lapsed |