Patent US4778486A successfully refreshed from Google Patents.
US4778486A
Expired / Lapsed
US
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Directional catalyst alloy sweep through process for preparing diamond compacts
Assignee: General Electric Co
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Filing: 1985-02-04
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Granted: 1988-10-18
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Expires: 2005-02-04
Abstract
Abstract Disclosed is an improved method for making a polycrystalline diamond compact comprising subjecting a mass of diamond particles, which mass is adjacent a cemented metal carbide mass containing a catalyst, to a high pressure/high temperature process which results in a compact characterized by diamond-to-diamond bonding. The improvement in such process comprises placing a second catalyst source adjacent the diamond mass, said second catalyst having a metal point which is lower than the melting point of the catalyst of the carbide; and subjecting said mass to high pressure/high temperature sintering at a temperature above the melting point of the second catalyst, but below the melting point of the carbide catalyst, for causing said second catalyst to selectively diffuse through said mass for forming said polycrystalline diamond compact. The preferred catalyst is a mixture of cobalt and boron.
Inventors
- 👤 Frank J. Csillag
- 👤 Harold P. Bovenkerk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:23
CPC Classifications
B; B24; B24D; B24D3/00; B24D3/34; B24D3/02; B24D3/04
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
156 words
In a method for making a polycrystalline diamond compact comprising providing an assembly having a mass of diamond particles adjacent a mass of cemented metal carbide which includes a catalyst for diamond recrystallization, and subjecting the assembly to a high pressure/high temperature process which results in a compact characterized by diamond-to-diamond bonding, the improvement which comprises: (a) placing a second source of catalyst for diamond recrystallization in said assembly adjacent said diamond mass, said catalyst in said second source having a melting point under said high pressure which is loweer than the melting point of the catalyst in said carbide; and (b) subjecting said assembly to high pressure/high temperature sintering at a temperature above the melting point of the catalyst in said second source, but below the melting point of said catalyst in said carbide, for causing said catalyst to selectively diffuse from said second source into said diamond mass for forming said polycrystalline diamond compact.
Claim 2
Dependent Claim
156 words
In a method for making a polycrystalline diamond compact comprising providing an assembly having a mass of diamond particles adjacent a mass of cemented metal carbide which includes a catalyst for diamond recrystallization, and subjecting the assembly to a high pressure/high temperature process which results in a compact characterized by diamond-to-diamond bonding, the improvement which comprises: (a) placing a second source of catalyst for diamond recrystallization in said assembly adjacent said diamond mass, said catalyst in said second source having a melting point under said high pressure which is loweer than the melting point of the catalyst in said carbide; and (b) subjecting said assembly to high pressure/high temperature sintering at a temperature above the melting point of the catalyst in said second source, but below the melting point of said catalyst in said carbide, for causing said catalyst to selectively diffuse from said second source into said diamond mass for forming said polycrystalline diamond compact.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein said catalysts are selected from the group consisting of cobalt, iron, nickel, ruthenium, rhodium, osmium, palladium, iridium, platinum, chromium, manganese, tantalum, and mixtures thereof.
Claim 4
Dependent Claim
24 words
The method of claim 2 wherein said second catalyst source comprises a combination of said catalyst in said second source and a diffusion aid.
Claim 5
Dependent Claim
11 words
The method of claim 3 wherein said diffusion aid is boron.
Claim 6
Dependent Claim
24 words
The method of claim 4 wherein said boron is present in an amount which is greater than 2% by weight of the catalyst combination.
Claim 7
Dependent Claim
21 words
The method of claim 5 wherein said catalyst combination comprises said catalyst and between about 2% and 7% by weight boron.
Claim 8
Dependent Claim
29 words
The method of claim 3 wherein said catalyst combination is selected from the group consisting of nickel/boron, nickel/manganese, cobalt/palladium, cobalt/tantalum/boron, iron/nickel/boron, cobalt/boron, cobalt/boron/tungsten, cobalt/boron/molybdenum, and cobalt/niobium/boron, cobalt/beryllium, cobalt/manganese, nickel/iron/chromium/phosphorous/boron/silicon.
Claim 9
Dependent Claim
13 words
The method of claim 3 wherein said catalyst combination comprises a preformed alloy.
Claim 10
Dependent Claim
19 words
The method of claim 3 wherein said catalyst combination comprises a mixture of said catalyst and said diffusion aid.
Claim 11
Dependent Claim
19 words
The method of claim 1 wherein said diamond particles are not substantially more than about 10 microns in size.
Claim 12
Dependent Claim
21 words
The method of claim 1 wherein said carbide is an annulus and said compact is a polycrystalline diamond wire die compact.
Claim 13
Dependent Claim
12 words
The method of claim 11 wherein said annulus comprises cobalt-cemented tungsten carbide.
Claim 14
Dependent Claim
42 words
The method of claim 1 wherein said subjecting temperature of step (b) is at least about 50° C. less than the melting point of said catalyst in said carbide and is above the melting point of said catalyst in said second source.
Claim 15
Dependent Claim
42 words
The method of claim 13 wherein said subjecting temperature of step (b) is at least about 100° C. less than the melting point of said catalyst in said carbide and is above the melting point of said catalyst in said second source.
Claim 16
Dependent Claim
42 words
The method of claim 14 wherein said subjecting temperature of step (b) is at least about 200° C. less than the melting point of said catalyst in said carbide and is above the melting point of said catalyst in said second source.
Claim 17
Dependent Claim
151 words
In a method for making a polycrystalline diamond wire die compact comprising subjecting a mass of diamond particles, which mass is contained in a cobalt-cemented tungsten carbide annulus to a high pressure/high temperature process which results in a compact characterized by diamond-to-diamond bonding, the improvement comprising: (a) placing a catalyst combination for diamond recrystallization at only one end of the annulus opening, said combination comprising said catalyst and boron, said combination being an alloy under said high pressure/high temperature process which alloy has a melting point which is lower than the melting point of said cobalt in said annulus; and (b) subjecting said mass to a high pressure/high temperature sintering at a temperature above the melting point of said alloy but below the melting point of said cobalt in said annulus, for causing said alloy to selectively and axially diffuse through said mass for forming said polycrystalline diamond wire die compact.
Claim 18
Dependent Claim
151 words
In a method for making a polycrystalline diamond wire die compact comprising subjecting a mass of diamond particles, which mass is contained in a cobalt-cemented tungsten carbide annulus to a high pressure/high temperature process which results in a compact characterized by diamond-to-diamond bonding, the improvement comprising: (a) placing a catalyst combination for diamond recrystallization at only one end of the annulus opening, said combination comprising said catalyst and boron, said combination being an alloy under said high pressure/high temperature process which alloy has a melting point which is lower than the melting point of said cobalt in said annulus; and (b) subjecting said mass to a high pressure/high temperature sintering at a temperature above the melting point of said alloy but below the melting point of said cobalt in said annulus, for causing said alloy to selectively and axially diffuse through said mass for forming said polycrystalline diamond wire die compact.
Claim 19
Dependent Claim
20 words
The method of claim 16 wherein said diamond particles are not substantially larger than about 10 microns in particle size.
Claim 20
Dependent Claim
24 words
The method of claim 16 wherein said boron is present in an amount which is greater than 2% by weight of the catalyst combination.
Claim 21
Dependent Claim
20 words
The method of claim 18 wherein said catalyst combination contains between about 2% and 7% boron by weight, and cobalt.
Claim 22
Dependent Claim
29 words
The method of claim 16 wherein said catalyst combination is selected from the group consisting of nickel/boron, nickel/manganese, cobalt/palladium, cobalt/tantalum/boron, iron/nickel/boron, cobalt/boron, cobalt/boron/tungsten, cobalt/boron/molybdenum, cobalt/niobium/boron, cobalt/beryllium, cobalt/manganese, and nickel/iron/chromium/phosphorous/boron/silicon.
Claim 23
Dependent Claim
20 words
The method of claim 16 wherein said second source of catalyst is placed adjacent an edge of said diamond mass.
Claim 24
Dependent Claim
166 words
In a method for making a polycrystalline diamond compact comprising providing an assembly having a mass of diamond particles adjacent a mass of cemented metal carbide which includes a catalyst for diamond recrystallization, and subjecting the assembly to a high pressure/high temperature process which results in a compact characterized by diamond-to-diamond bonding, the improvement which comprises: (a) placing a second source of catalyst for diamond recrystallization in said assembly interposed between said mass of diamond particles and said mass of cemented metal carbide, said catalyst in said second source having a melting point under said high pressure which is lower than the melting point of the catalyst in said carbide; and (b) subjecting said assembly to high pressure/high temperature sintering at a temperature above the melting point of the catalyst in said second source, but below the melting point of said catalyst in said carbide, for causing said catalyst to selectively diffuse from said second source through said diamond mass for forming said polycrystalline diamond compact.
Claim 25
Dependent Claim
166 words
In a method for making a polycrystalline diamond compact comprising providing an assembly having a mass of diamond particles adjacent a mass of cemented metal carbide which includes a catalyst for diamond recrystallization, and subjecting the assembly to a high pressure/high temperature process which results in a compact characterized by diamond-to-diamond bonding, the improvement which comprises: (a) placing a second source of catalyst for diamond recrystallization in said assembly interposed between said mass of diamond particles and said mass of cemented metal carbide, said catalyst in said second source having a melting point under said high pressure which is lower than the melting point of the catalyst in said carbide; and (b) subjecting said assembly to high pressure/high temperature sintering at a temperature above the melting point of the catalyst in said second source, but below the melting point of said catalyst in said carbide, for causing said catalyst to selectively diffuse from said second source through said diamond mass for forming said polycrystalline diamond compact.
Claim 26
Dependent Claim
30 words
The method of claim 22 wherein said catalyst is selected from the group consisting of cobalt, iron, nickel, ruthenium, rhodium, osmium, palladium, iridium, platinum, chromium, manganese, tantalum, and mixtures thereof.
Claim 27
Dependent Claim
24 words
The method of claim 22 wherein said second catalyst source comprises a combination of said catalyst in said second source and a diffusion aid.
Claim 28
Dependent Claim
11 words
The method of claim 24 wherein said diffusion aid is boron.
Claim 29
Dependent Claim
24 words
The method of claim 25 wherein said boron is present in an amount which is greater than 2% by weight of the catalyst combination.
Claim 30
Dependent Claim
21 words
The method of claim 26 wherein said catalyst combination comprises said catalyst and between about 2% and 7% by weight boron.
Claim 31
Dependent Claim
29 words
The method of claim 22 wherein said catalyst combination is selected from the group consisting of nickel/boron, nickel/manganese, cobalt/palladium, cobalt/tantalum/boron, iron/nickel/boron, cobalt/boron, cobalt/boron/tungsten, cobalt/boron/molybdenum, and cobalt/niobium/boron, cobalt/beryllium, cobalt/manganese, nickel/iron/chromium/phosphorous/boron/silicon.
Claim 32
Dependent Claim
42 words
The method of claim 22 wherein said subjecting temperature of step (b) is at least about 50° C. less than the melting point of said catalyst in said carbide and is above the melting point of said catalyst in said second source.
Claim 33
Dependent Claim
42 words
The method of claim 22 wherein said subjecting temperature of step (b) is at least about 100° C. less than the melting point of said catalyst in said carbide and is above the melting point of said catalyst in said second source.
References Cited (Backward Citations)
US3913280A
Cited
US3745623A
Cited
US3831428A
Cited
US4108614A
Cited
US4229186A
Cited
US4219339A
Cited
US4171973A
Cited
US4231762A
Cited
US4144739A
Cited
US4129052A
Cited
US4268276A
Cited
US4255165A
Cited
US4534934A
Cited
US4370149A
Cited
US4525179A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-18 | 1992-04-18 | 1992-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-18 | 1996-04-18 | 1996-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-18 | 2000-04-18 | 2000-10-18 | $7700.00 | Window Closed / Lapsed |