Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
130 words
A process for forming an image with a positive resist, said process comprising the steps of: (a) forming on a substrate a positive resist layer of poly(methacrylic anhydride); (b) baking the resist at a temperature of 200° to 350° C.; (c) irradiating said resist layer with a predetermined pattern of ionizing radiation; (d) developing the irradiated area with a developer comprising a solution of a base selected from the group consisting of alkali metal hydroxides, ammonium hydroxides (including quarternary ammonium hydroxides), alkali metal alkoxides and alkali metal carbonates; and a hydroxylic solvent selected from the group consisting of branched or straight chain alcohols having a C 1 -C 12 carbon content and water or mixtures thereof; and (e) rinsing the resist with the same solvent selected above, or with water.
Claim 2
Dependent Claim
130 words
A process for forming an image with a positive resist, said process comprising the steps of: (a) forming on a substrate a positive resist layer of poly(methacrylic anhydride); (b) baking the resist at a temperature of 200° to 350° C.; (c) irradiating said resist layer with a predetermined pattern of ionizing radiation; (d) developing the irradiated area with a developer comprising a solution of a base selected from the group consisting of alkali metal hydroxides, ammonium hydroxides (including quarternary ammonium hydroxides), alkali metal alkoxides and alkali metal carbonates; and a hydroxylic solvent selected from the group consisting of branched or straight chain alcohols having a C 1 -C 12 carbon content and water or mixtures thereof; and (e) rinsing the resist with the same solvent selected above, or with water.
Claim 3
Dependent Claim
54 words
The method of claim 1 wherein the formation of a positive resist layer of poly(methacrylic anhydride) further comprises: (a) coating the substrate with a solution of poly(tert-butyl methacrylate); and (b) heating the coated substrate to about 220° to 280° C. for 1 to 24 hours to sufficiently convert the resist film to poly(methacrylic anhydride).
Claim 4
Dependent Claim
17 words
The process of claim 1 wherein the base is potassium hydroxide and the hydroxylic solvent is 2-ethoxyethanol.
Claim 5
Dependent Claim
19 words
The process of claim 1 wherein the concentration of the base in the hydroxylic solvent is .5M to 1M.
Claim 6
Dependent Claim
17 words
The process of claim 1 wherein the base is sodium hydroxide and the hydroxylic solvent is cellosolve.
Claim 7
Dependent Claim
17 words
The process of claim 1 wherein the base is potassium hydroxide and the hydroxylic solvent is water.
Claim 8
Dependent Claim
17 words
The process of claim 1 wherein the base is sodium hydroxide and the hydroxylic solvent is water.
Claim 9
Dependent Claim
17 words
The process of claim 1 wherein the base is potassium carbonate and the hydroxylic solvent is water.
Claim 10
Dependent Claim
17 words
The process of claim 1 wherein the base is sodium carbonate and the hydroxylic solvent is water.
Claim 11
Dependent Claim
17 words
The process of claim 1 wherein the base is tetrabutylammonium hydroxide and the hydroxylic solvent is water.