US4775959A
Expired / Lapsed
US
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Semiconductor integrated circuit device having back-bias voltage generator
Assignee: Hitachi Ltd
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Filing: 1985-08-08
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Granted: 1988-10-04
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Expires: 2005-08-08
Abstract
Abstract In typical MOS integrated circuit devices, the level of the back-bias voltage which is generated by a built-in back-bias generation circuit and is supplied to a semiconductor substrate is changed by an undesirable leakage current flowing through the semiconductor substrate. The leakage current is not constant. Instead, it becomes relatively small when a main circuit formed on the semiconductor substrate such as a dynamic RAM is not operative, and relatively great when such a circuit is operative. To reduce the change of the back-bias voltage resulting from the change of the leakage current, a back-bias voltage generation circuit is provided which has output capacity of a plurality of levels. Its output capacity is increased in response to an operation control signal of the main circuit. The level change of the back-bias voltage generation circuit can further be reduced by providing a level detection circuit for detecting the level change and a feedback circuit for controlling the back-bias voltage generation circuit in accordance with the output of the level detection circuit.
Inventors
- 👤 Katsuyuki Sato
- 👤 Kazumasa Yanagisawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:23
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/145; G11C5/146; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/4074
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
222 words
A semiconductor integrated circuit device comprising: a first circuit which includes an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is supplied, and whose operation is controlled by a control signal; and a back-bias voltage generation circuit for generating said back-bias voltage, wherein the operation of said back-bias voltage generation circuit is controlled on the basis of said control signal so that the voltage output capacity thereof is changed in synchronism with the operating state of said first circuit. wherein said back-bias voltage generation circuit comprises a first rectification circuit comprising a capacitor and a plurality of rectification elements, said first rectification circuit receiving periodic pulse signals, a second rectification circuit comprising a capacitor and a plurality of rectification elements, and a control circuit for controlling pulse signals supplied to said second rectification circuit on the basis of said control signal, and wherein said back-bias voltage generation circuit further comprises a first oscillation circuit for generating pulse signals to be supplied to said first rectification circuit and a second oscillation circuit having the operation thereof controlled in response to an operation control signal produced from said control circuit, and generating pulse signals to be supplied to said second rectification circuit, and wherein said first oscillation circuit generates said pulse signals when said second oscillation circuit operates.
Claim 2
Dependent Claim
222 words
A semiconductor integrated circuit device comprising: a first circuit which includes an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is supplied, and whose operation is controlled by a control signal; and a back-bias voltage generation circuit for generating said back-bias voltage, wherein the operation of said back-bias voltage generation circuit is controlled on the basis of said control signal so that the voltage output capacity thereof is changed in synchronism with the operating state of said first circuit. wherein said back-bias voltage generation circuit comprises a first rectification circuit comprising a capacitor and a plurality of rectification elements, said first rectification circuit receiving periodic pulse signals, a second rectification circuit comprising a capacitor and a plurality of rectification elements, and a control circuit for controlling pulse signals supplied to said second rectification circuit on the basis of said control signal, and wherein said back-bias voltage generation circuit further comprises a first oscillation circuit for generating pulse signals to be supplied to said first rectification circuit and a second oscillation circuit having the operation thereof controlled in response to an operation control signal produced from said control circuit, and generating pulse signals to be supplied to said second rectification circuit, and wherein said first oscillation circuit generates said pulse signals when said second oscillation circuit operates.
Claim 3
Dependent Claim
29 words
A semiconductor integrated circuit device according to claim 1 wherein said second oscillation circuit comprises a ring oscillator forming a feedback loop on the basis of said control signal.
Claim 4
Dependent Claim
71 words
A semiconductor integrated circuit device according to claim 1, further comprising a level detection circuit for detecting the level of said back-bias voltage, and wherein said control circuit generates said operation control signal for making said second oscillation circuit operative during the period in which said first circuit is operative on the basis of said control signal and during the period in which said level detection circuit generates a detection signal.
Claim 5
Dependent Claim
49 words
A semiconductor integrated circuit device according to claim 3 wherein said level detection circuit comprises a level shift circuit for generating a level-shifted output voltage with respect to said back-bias voltage upon receiving said back-bias voltage, and a level discrimination circuit receiving the output of said level shift circuit.
Claim 6
Dependent Claim
37 words
A semiconductor integrated circuit device according to claim 4 wherein said level shift circuit comprises a plurality of series-connected level shift elements, each of which includes a diode-connected insulated gate field effect transistor, and a bias element.
Claim 7
Dependent Claim
18 words
A semiconductor integrated circuit device according to claim 5 wherein said level discrimination circuit comprises a hysteresis circuit.
Claim 8
Dependent Claim
27 words
A semiconductor integrated circuit device according to claim 1 wherein the oscillation frequency of said first oscillation circuit is lower than that of said second oscillation circuit.
Claim 9
Dependent Claim
24 words
A semiconductor integrated circuit device according to claim 1 wherein said first circuit comprises a memory whose operation is controlled by said control signal.
Claim 10
Dependent Claim
30 words
A semiconductor integrated circuit device according to claim 8 wherein said memory comprises a dynamic type random access memory, and said control signal comprises at least a chip selection signal.
Claim 11
Dependent Claim
87 words
A semiconductor integrated circuit device according to claim 9 wherein said dynamic type random access memory is rendered operative at a time of chip slection determined by said chip selection signal and at a time of a refresh operation determined by a refresh control signal, and said control circuit generates said operation control signal for making said second oscillation circuit operative in synchronism with the operative state of said dynamic type random access memory, on the basis of said chip selection signal and said refresh control signal.
Claim 12
Dependent Claim
82 words
A semiconductor integrated circuit device according to claim 10 further comprising a level detection circuit detecting the level of said back-bias voltage, and wherein said control circuit generates said operation control signal for making said second oscillation circuit operative during a period in which said dynamic type random access memory is made operative on the basis of said chip selection signal and said refresh control signal, and during a period in which the detection signal is generated from said level detection circuit.
Claim 13
Dependent Claim
158 words
A semiconductor integrated circuit device comprising: a first circuit including an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is applied; a back-bias voltage generation circuit generating said back-bias voltage upon receiving pulse signals; and a level detection circuit comprising a level discrimination circuit, a level shift circuit disposed between an input terminal of said level discrimination circuit and said substrate gate and supplying a voltage level-shifted by a predetermined level with respect to said back-bias voltage to the input of said level discrimination circuit, and a bias element forming a bias current for said level shift circuit, wherein said back-bias voltage generation circuit comprises a second circuit for generating said back-bias voltage in response to pulse signals and an oscillation circuit having the operation thereof controlled in response to the output of said level discrimination circuit, wherein said oscillation circuit generates said pulse signals to be supplied to said second circuit.
Claim 14
Dependent Claim
158 words
A semiconductor integrated circuit device comprising: a first circuit including an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is applied; a back-bias voltage generation circuit generating said back-bias voltage upon receiving pulse signals; and a level detection circuit comprising a level discrimination circuit, a level shift circuit disposed between an input terminal of said level discrimination circuit and said substrate gate and supplying a voltage level-shifted by a predetermined level with respect to said back-bias voltage to the input of said level discrimination circuit, and a bias element forming a bias current for said level shift circuit, wherein said back-bias voltage generation circuit comprises a second circuit for generating said back-bias voltage in response to pulse signals and an oscillation circuit having the operation thereof controlled in response to the output of said level discrimination circuit, wherein said oscillation circuit generates said pulse signals to be supplied to said second circuit.
Claim 15
Dependent Claim
203 words
A semiconductor integrated circuit device comprising: a first circuit which includes an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is supplied, and whose operation is controlled by a control signal; and a back-bias voltage generation circuit for generating said back-bias voltage, wherein the operation of said back-bias voltage generation circuit is controlled on the basis of said control signal so that the voltage output capacity of said back-bias voltage generation circuit is changed in synchronism with the operating state of said first circuit, wherein said back-bias voltage generation circuit comprises a first rectification circuit comprising a capacitor and a plurality of rectification elements, said back-bias voltage generation circuit receiving periodic pulse signals, a second rectification circuit comprising a capacitor and a plurality of rectification elements, and a control circuit for controlling pulse signals supplied to said second rectification circuit on the basis of said control signal, and wherein said back-bias voltage generation circuit further comprises a common oscillation circuit generating pulse signals to be supplied to said first and second rectification circuits, and wherein said control circuit includes a gate circuit inhibiting the operation of said second rectification circuit when said first circuit is made inoperative.
Claim 16
Dependent Claim
203 words
A semiconductor integrated circuit device comprising: a first circuit which includes an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is supplied, and whose operation is controlled by a control signal; and a back-bias voltage generation circuit for generating said back-bias voltage, wherein the operation of said back-bias voltage generation circuit is controlled on the basis of said control signal so that the voltage output capacity of said back-bias voltage generation circuit is changed in synchronism with the operating state of said first circuit, wherein said back-bias voltage generation circuit comprises a first rectification circuit comprising a capacitor and a plurality of rectification elements, said back-bias voltage generation circuit receiving periodic pulse signals, a second rectification circuit comprising a capacitor and a plurality of rectification elements, and a control circuit for controlling pulse signals supplied to said second rectification circuit on the basis of said control signal, and wherein said back-bias voltage generation circuit further comprises a common oscillation circuit generating pulse signals to be supplied to said first and second rectification circuits, and wherein said control circuit includes a gate circuit inhibiting the operation of said second rectification circuit when said first circuit is made inoperative.
Claim 17
Dependent Claim
45 words
A semiconductor integrated circuit device according to claim 13 wherein said gate circuit is disposed between the output terminal of said oscillation circuit and the input terminal of said second rectification circuit, and the operation of said gate circuit is controlled by said control signal.
Claim 18
Dependent Claim
55 words
A semiconductor integrated circuit device according to claim 13, further comprising a level detection circuit detecting the level of said back-bias voltage, and wherein said gate circuit inhibits the operation of said second rectification circuit when said first circuit is made inoperative and when the detection signal is not generated from said level detection circuit.
Claim 19
Dependent Claim
48 words
A semiconductor integrated circuit device according to claim 15 wherein said level detection circuit comprises a level shift circuit generating an output voltage level-shifted with respect to said back-bias voltage upon receiving said back-bias voltage, and a level discrimination circuit receiving the output of said level shift circuit.
Claim 20
Dependent Claim
54 words
A semiconductor integrated circuit device according to claim 16 wherein said level shift circuit comprises a plurality of level shift elements, each of which is comprised of an insulated gate field effect transistor, that are connected in series with one another, and a bias element applying a bias current to said level shift elements.
Claim 21
Dependent Claim
209 words
A semiconductor integrated circuit device comprising: a first circuit which includes an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is supplied, and whose operation is controlled by a control signal; and a back-bias voltage generation circuit for generating said back-bias voltage, wherein the operation of said back-bias voltage generation circuit is controlled on the basis of said control signal so that the voltage output capacity of said back-bias voltage generation circuit is changed in synchronism with the operating state of said first circuit, wherein said back-bias voltage generation circuit comprises a first capacitor which is pre-charged in response to a first level of a periodic pulse signal and applies a bias potential to be supplied to said substrate gate to a first node in response to a second level of said pulse signal, a first switch circuit connected to said first node and forming a pre-charge path for said first capacitor, a second switch circuit disposed between said first node and said substrate gate and caused to operate substantially complementarily with respect to said first switch circuit, and a second capacitor increasing the pre-charge level of said first capacitor when said first circuit is made operative in response to said control signal.
Claim 22
Dependent Claim
209 words
A semiconductor integrated circuit device comprising: a first circuit which includes an insulated gate field effect transistor having a substrate gate to which a back-bias voltage is supplied, and whose operation is controlled by a control signal; and a back-bias voltage generation circuit for generating said back-bias voltage, wherein the operation of said back-bias voltage generation circuit is controlled on the basis of said control signal so that the voltage output capacity of said back-bias voltage generation circuit is changed in synchronism with the operating state of said first circuit, wherein said back-bias voltage generation circuit comprises a first capacitor which is pre-charged in response to a first level of a periodic pulse signal and applies a bias potential to be supplied to said substrate gate to a first node in response to a second level of said pulse signal, a first switch circuit connected to said first node and forming a pre-charge path for said first capacitor, a second switch circuit disposed between said first node and said substrate gate and caused to operate substantially complementarily with respect to said first switch circuit, and a second capacitor increasing the pre-charge level of said first capacitor when said first circuit is made operative in response to said control signal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-04 | 1992-04-04 | 1992-10-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-04 | 1996-04-04 | 1996-10-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-04 | 2000-04-04 | 2000-10-04 | $7700.00 | Window Closed / Lapsed |