US4773942A
Expired / Lapsed
US
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Flexible photovoltaic device
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1986-03-03
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Granted: 1988-09-27
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Expires: 2006-03-03
Abstract
Abstract A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10 -7 (Ω·cm.) -1 at the time of light impinging and made of an amorphous silicon nitride containing hydrogen.
Inventors
- 👤 Yoshihiro Hamakawa
- 👤 Yoshihisa Tawada
- 👤 Kazunori Tsuge
- 👤 Masanobu Izumina
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:21
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; H10F19/00; H10F19/30; H10F19/90; H10F19/902; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F77/1698; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
74 words
A photovoltaic device comprising a substrate including a metal foil and an overlaying electric insulating thin film having an electric conductivity of not more than about 10 -7 (Ω·cm.) -1 during light impingement, and a photovoltaic device body of a non-single-crystal semiconductor, the device body being formed over said electric insulating thin film, and said electric insulating thin film being a layer of amorphous silicon nitride containing hydrogen having a thickness of 0.01-20 μm.
Claim 2
Dependent Claim
74 words
A photovoltaic device comprising a substrate including a metal foil and an overlaying electric insulating thin film having an electric conductivity of not more than about 10 -7 (Ω·cm.) -1 during light impingement, and a photovoltaic device body of a non-single-crystal semiconductor, the device body being formed over said electric insulating thin film, and said electric insulating thin film being a layer of amorphous silicon nitride containing hydrogen having a thickness of 0.01-20 μm.
Claim 3
Dependent Claim
37 words
The device of claim 1, wherein the non-single-crystal semiconductor is an amorphous silicon semiconductor or a multicomponent amorphous semiconductor made of amorphous silicon containing an element selected from the group consisting of C, N, Ge and Sn.
Claim 4
Dependent Claim
50 words
The device of claim 1, wherein the non-single-crystal semiconductor is an amorphous semiconductor made of an element selected from the group consisting of Si, Ge and Sn or a multicomponent amorphous semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.
Claim 5
Dependent Claim
37 words
The device of claim 1, wherein the non-single-crystal semiconductor is a microcrystalline silicon semiconductor or a multicomponent microcrystalline semiconductor made of microcrystalline silicon containing an element selected from the group consisting of C, N, Ge and Sn.
Claim 6
Dependent Claim
50 words
The device of claim 1, wherein the non-single-crystal semiconductor is a microcrystalline semiconductor made of an element selected from the group consisting of Si, Ge and Sn or a multicomponent microcrystalline semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.
Claim 7
Dependent Claim
90 words
The device of claim 1, wherein said non-single-crystal semiconductor includes an amorphous semiconductor layer and a microcrystalline semiconductor layer, said amorphous semiconductor layer being an amorphous Si, Ge or Sn semiconductor or an amorphous multicomponent semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn, and said microcrystalline semiconductor layer being a microcrystalline Si, Ge or Sn semiconductor or a microcrystalline multicomponent semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.
Claim 8
Dependent Claim
19 words
The device of claim 1, wherein said non-single-crystal semiconductors have a three layer structure of a PIN junction type.
Claim 9
Dependent Claim
42 words
The device of claim 7, wherein at least one of the P-layer and the N-layer is a multicomponent semiconductor made of a mixture or amorphous or microcrystalline silicon and an element selected from the group consisting of C, N, Ge and Sn.
Claim 10
Dependent Claim
18 words
The device of claim 1, wherein said layer of amorphous silicon nitride is prepared by glow discharge decomposition.
Claim 11
Dependent Claim
40 words
The device of claim 1, wherein said substrate is provided with a plurality of photovoltaic device bodies on the electric insulating thin film to give a plurality of generating zones, said generating zones being connected in series to each other.
Claim 12
Dependent Claim
63 words
A flexible amorphous silicon solar battery for attaching to a curved body portion comprising: a metal foil as the substrate thereof; an insulating layer which is amorphous silicon nitride containing hydrogen formed on said metal foil integrally by plasma chemical vapor deposition, the thickness of which is 0.01-20 μm; and at least one amorphous silicon photoelectric conversion portion formed on said insulating layer.
Claim 13
Dependent Claim
63 words
A flexible amorphous silicon solar battery for attaching to a curved body portion comprising: a metal foil as the substrate thereof; an insulating layer which is amorphous silicon nitride containing hydrogen formed on said metal foil integrally by plasma chemical vapor deposition, the thickness of which is 0.01-20 μm; and at least one amorphous silicon photoelectric conversion portion formed on said insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-27 | 1992-03-28 | 1992-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-27 | 1996-03-28 | 1996-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-27 | 2000-03-28 | 2000-09-27 | $7700.00 | Window Closed / Lapsed |