Complementary metal oxide semiconductor integrated circuit with unequal reference voltages

Claim 1

A complementary metal oxide semiconductor integrated circuit having a power supply comprising: a semiconductor substrate of a first conductivity type forming the collector of a first transistor and the base of a second transistor. a well of a second conductivity type formed in said semiconductor substrate and defining the base of the first transistor and the collector of the second transistor, said second conductivity type being opposite to said first conductivity type, a first diffusion region of said second conductivity type formed in said well, a first reference voltage being applied to said first diffusion region, a second diffusion region of said first conductivity type and defining the emitter of said first transistor formed in said well, a third diffusion region of said second conductivity type defining a power supply terminal formed in said well and separated from said first diffusion region, and a fourth diffusion region of said second conductivity type formed in said semiconductor substrate, spaced laterally apart from said well and forming the emitter of said second transistor, a second reference voltage different from said first reference voltage being applied to said fourth diffusion region, said second diffusion region and said third diffusion region being in contact with each other within said well, a metallic layer of said substrate above said well electrically connecting said second and third diffusion regions to each other.