US4770716A
Expired / Lapsed
US
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Stabilization of intraconnections and interfaces
Assignee: Chronar Corp
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Filing: 1987-04-16
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Granted: 1988-09-13
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Expires: 2007-04-16
Abstract
Abstract Stabilization of energy sensitive semiconductor devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying, and the final deposition of an overlying electrode by metallization.
Inventors
- 👤 K. R. Ramaprasad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:17
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
78 words
The method of stabilizing semiconductor devices with interconnections, which comprises the steps of: (a) providing the devices with a first electrode which is exposed through an overlying layer of semiconductor; (b) dipping the device in an acid solution and/or dipping the device in a solution that contains a compound which can complex with a metallic ion; (c) further dipping the device in a solution containing said metallic ion; and (d) providing a further contact to the first contact.
Claim 2
Independent Claim
78 words
The method of stabilizing semiconductor devices with interconnections, which comprises the steps of: (a) providing the devices with a first electrode which is exposed through an overlying layer of semiconductor; (b) dipping the device in an acid solution and/or dipping the device in a solution that contains a compound which can complex with a metallic ion; (c) further dipping the device in a solution containing said metallic ion; and (d) providing a further contact to the first contact.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein the acid solution is about 30% phosphoric by volume and said device is rinsed after each dipping step in de-ionized water.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein each device is dried with an isopropanol rinse after the final rinse with de-ionized water.
Claim 5
Dependent Claim
41 words
The method of claim 1 wherein the second dip of step (b) contains ammonium hydroxide with a concentration in the range from 10 to 50% by volume and the dipping time is approximately in the range from 10 to 60 seconds.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the metallic ion solution of step (c) contains nickel or chromium ions.
Claim 7
Dependent Claim
24 words
The method of claim 5 wherein the nickel ion solution is nickel sulfate with a nickel ion concentration range of about 3-12% by weight.
Claim 8
Dependent Claim
29 words
The method of claim 5 wherein the device is heated, after an isopropanol rinse, in the range of 100-150 C., for a duration of 30 minutes to 3 hours.
Claim 9
Dependent Claim
15 words
The method of claim 7 wherein the preferred values are 120 C. and one hour.
Claim 10
Dependent Claim
26 words
The method of claim 1 wherein the compound of step (b) used to complex the metallic ion is from the group including glycol, ethylenediamine, and dimethylglyoxime.
Claim 11
Dependent Claim
27 words
The method of claim 1 wherein at least one of the solutions includes a surfactant to promote contact between the surface of the device and the solution.
Claim 12
Independent Claim
101 words
The method of stabilizing a semiconductor device with intraconnections wherein the device is a solar cell panel with a front electrode of conductive metal oxide underlying a layer of amorphous semiconductor, which comprises the steps of: (a) providing said device with said front electrode which is exposed through said layer of amorphous semiconductor; (b) dipping the device in an acid solution and/or dipping the device in a solution that contains a compound which can complex with a metallic ion; (c) further dipping the device in a solution containing said metallic ion and (d) providing a further contact to the first contact.
Claim 13
Independent Claim
101 words
The method of stabilizing a semiconductor device with intraconnections wherein the device is a solar cell panel with a front electrode of conductive metal oxide underlying a layer of amorphous semiconductor, which comprises the steps of: (a) providing said device with said front electrode which is exposed through said layer of amorphous semiconductor; (b) dipping the device in an acid solution and/or dipping the device in a solution that contains a compound which can complex with a metallic ion; (c) further dipping the device in a solution containing said metallic ion and (d) providing a further contact to the first contact.
Claim 14
Dependent Claim
27 words
The method of claim 11 wherein said acid solution is about 30% phosphoric by volume and said device is rinsed after each dipping step in de-ionized water.
Claim 15
Dependent Claim
32 words
The method of claim 11 wherein the acid solution of step (b) and the metallic ion solution of step (c) are combined to provide a single bath and no complexing is used.
Claim 16
Dependent Claim
17 words
The method of claim 11 wherein the devices are given an isopropanol rinse after the last dipping.
Claim 17
Dependent Claim
19 words
The method of claim 14 wherein the isopropanol rinse is followed by metal deposition to provide the further contact.
Claim 18
Dependent Claim
31 words
The method of claim 15 wherein the devices are heated in the range of 100-150 C. for a duration of 30 minutes to 3 hours before depositing the further contact metal.
Claim 19
Dependent Claim
60 words
A semiconductor device with intraconnected electrodes, comprising a substrate; a first electrode on said substrate; an amorphous semiconductor on said first electrode; adsorbed metallic ions on said exposed first electrode and said amorphous semiconductor; and a second electrode on said semiconductor extending into contact with said first electrode at the interface of said first eletrode and said adsorbed metallic ions.
Claim 20
Dependent Claim
60 words
A semiconductor device with intraconnected electrodes, comprising a substrate; a first electrode on said substrate; an amorphous semiconductor on said first electrode; adsorbed metallic ions on said exposed first electrode and said amorphous semiconductor; and a second electrode on said semiconductor extending into contact with said first electrode at the interface of said first eletrode and said adsorbed metallic ions.
Claim 21
Dependent Claim
19 words
The apparatus of claim 17 wherein the metallic ions are selected from the class consisting of nickel and chromium.
Claim 22
Dependent Claim
92 words
The apparatus of claim 18 wherein said apparatus is a solar cell panel comprising said substrate with a plurality of discrete transparent conductive first electrodes on the substrate, comprising: an amorphous semiconductor layer on said transparent electrodes; a plurality of second electrodes on said semiconductor layer opposite the transparent electrodes; an interface with adsorbed metallic ions between each separate transparent electrode and the opposite conducting electrode; and a further interface with adsorbed metallic ions between each second electrode and said amorphous semiconductor layer; thereby to enhance the thermal stability of said device.
Claim 23
Dependent Claim
38 words
The device of claim 17 wherein said metallic ions are adsorbed upon said first electrode and said amorphous semiconductor to promote contact stability with said first electrode and interface stability between the amorphous semiconductor and the second electrode.
References Cited (Backward Citations)
US4675466A
Cited
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