US4675466A
Expired / Lapsed
US
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Stabilization of intraconnections and interfaces
Assignee: BP SOLAR Inc
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Filing: 1986-04-05
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Granted: 1987-06-23
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Expires: 2006-04-05
Abstract
Abstract Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying and the final deposition of an overlying electrode by metallization.
Inventors
- 👤 Kackadasam R. Ramaprasad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:08
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F19/00; H10F19/30; H10F19/31; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
57 words
The method of stabilizing semiconductor devices with interconnections, which comprises the steps of: (a) providing the device with a first electrode which is exposed through an overlying layer of semiconductor; (b) dipping the device in said solution; (c) further dipping the device in a metallic ion solution; and (d) providing a further contact to the first contact.
Claim 2
Independent Claim
57 words
The method of stabilizing semiconductor devices with interconnections, which comprises the steps of: (a) providing the device with a first electrode which is exposed through an overlying layer of semiconductor; (b) dipping the device in said solution; (c) further dipping the device in a metallic ion solution; and (d) providing a further contact to the first contact.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said device is rinsed after the acid dipping step.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the acid dip contains phosphoric acid.
Claim 5
Dependent Claim
33 words
The method of claim 3 wherein the phosphoric acid has a concentration in the range from 10 to 100% and the dipping time is approximately in the range of 10 to 30 seconds.
Claim 6
Dependent Claim
14 words
The method of claim 4 wherein said phosphoric acid has a concentration of 30%.
Claim 7
Dependent Claim
12 words
The method of claim 4 wherein said dipping time is 30 seconds.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein the metallic ion solution contains nickel ions.
Claim 9
Dependent Claim
22 words
The method of claim 7 wherein the nickel ion solution is nickel sulfate and has a nickel ion concentration of about 11%.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein said device is rinsed after being dipped in the metallic ion solution.
Claim 11
Dependent Claim
18 words
The method of claim 9 wherein the device is dried with an isopropanol rinse after the second rinsing.
Claim 12
Dependent Claim
10 words
The method of claim 9 wherein the rinses are combined.
Claim 13
Dependent Claim
20 words
The method of claim 9 wherein the second rinsing is followed by metallic deposition to provide the final contacting element.
Claim 14
Dependent Claim
13 words
The method of claim 12 wherein said metallic deposition is by vacuum metallization.
Claim 15
Dependent Claim
11 words
The method of claim 1 wherein the metallic ion is chromium.
Claim 16
Dependent Claim
21 words
The method of claim 1 wherein the acid solution and the metallic ion solution are combined to provide a single bath.
Claim 17
Dependent Claim
24 words
The method of claim 1 wherein at least one of the solutions includes a surfactant, to promote contact between the surface and the ions.
Claim 18
Dependent Claim
12 words
The method of claim 16 wherein said surfactant is sodium lauryl sulfate.
Claim 19
Dependent Claim
57 words
A semiconductor device with interconnected electrodes, comprising a substrate; a first electrode on said substrate; an amorphous semiconductor on said first electrode; metallic ions on said first electrode and said amorphous semiconductor; and a second electrode on said semiconductor extending into contact with said first electrode at the interface of said first electrode and said metallic ions.
Claim 20
Dependent Claim
57 words
A semiconductor device with interconnected electrodes, comprising a substrate; a first electrode on said substrate; an amorphous semiconductor on said first electrode; metallic ions on said first electrode and said amorphous semiconductor; and a second electrode on said semiconductor extending into contact with said first electrode at the interface of said first electrode and said metallic ions.
Claim 21
Dependent Claim
11 words
The apparatus of claim 18 wherein the metallic ions are nickel.
Claim 22
Dependent Claim
11 words
The apparatus of claim 18 wherein the metallic ions are chromium.
Claim 23
Dependent Claim
80 words
The apparatus of claim 20 wherein said apparatus is a solar cell panel comprising said substrate with a plurality of discrete transparent conductive first electrodes on the substrate; said amorphous semiconductor comprising a layer on the transparent electrodes; a plurality of second electrodes on said semiconductor layer and opposite the transparent electrodes; and an interface between each separate transparent electrode and the opposite conducting electrode with metallic ions at said interface; thereby to enhance the thermal stability of said device.
Claim 24
Dependent Claim
38 words
The device of claim 18 wherein said metallic ions are adsorbed upon said first electrode and said amorphous semiconductor to promote contact stability with said first electrode and interface stability between the amorphous semiconductor and the second electrode.
Claim 25
Independent Claim
79 words
The method of stabilizing a semiconductor device with intraconnections wherein the device is a solar cell panel with a front electrode of conductive metal oxide underlying a layer of amorphous semiconductor, which comprises the steps of: (a) providing said device with said front electrode which is exposed through said layer of amorphous semiconductor; (b) dipping the device in acid solution; (c) further dipping the device in a metallic ion solution; and (d) providing a contact to said front electrode.
Claim 26
Independent Claim
79 words
The method of stabilizing a semiconductor device with intraconnections wherein the device is a solar cell panel with a front electrode of conductive metal oxide underlying a layer of amorphous semiconductor, which comprises the steps of: (a) providing said device with said front electrode which is exposed through said layer of amorphous semiconductor; (b) dipping the device in acid solution; (c) further dipping the device in a metallic ion solution; and (d) providing a contact to said front electrode.
References Cited (Backward Citations)
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