Picture pick-up device including a solid-state image sensor and an electronic shutter

Claim 1

A picture pick-up device including a solid-state image sensor and an electronic shutter, which image sensor comprises in a semiconductor substrate picture pick-up elements for converting in a picture information integration period incident radiation into electric charge lossed across biased semiconductor junctions and a parallel-in, series-out shift register coupled thereto for subsequently shifting, under the control of clock pulse signals supplied by a control signal generator, the electric charge losses to a sensor output terminal for the supply of a picture signal, the electronic shutter being active with a charge connection at the picture pick-up elements during a part of the picture information integration period under the control of a shutter signal supplied by the control signal generator, characterized in that--when using an image sensor having a layer structure of at least three layers of a semiconductor material of a filrst conductivity type, the second opposite conductivity type and the first conductivity type, respectively, with the subtrate of doped first-type semiconductor material accomodating strip-shaped regions of alternately high doped second and still higher doped first-type semiconductor material on a substrate side, in which subsrtate the regions of the second conductivity type extend to below the regions of the first conductivity type and have a decreasing thickness in the proximity of the central axis of these regions and in which an elctrode system directed at right angles to the strip-shape regions is present at the picture pick-up elements of the image sensor--the electronic shutter is active with a shutter signal which occurs during the said picture information integration periods with a shutter pulse so that the charge connection is present as a conducting connection between the strip-shaped regions of the first conductivity type and the substrate of the first conductivity type.